| Interfacial thermal conductance across room-temperature-bonded GaN/diamond interfaces for GaN-on-diamond devices Z Cheng, F Mu, L Yates, T Suga, S Graham ACS applied materials & interfaces 12 (7), 8376-8384, 2020 | 139 | 2020 |
| Experimental observation of high intrinsic thermal conductivity of AlN Z Cheng, YR Koh, A Mamun, J Shi, T Bai, K Huynh, L Yates, Z Liu, R Li, ... Physical Review Materials 4 (4), 044602, 2020 | 118 | 2020 |
| Low thermal boundary resistance interfaces for GaN-on-diamond devices L Yates, J Anderson, X Gu, C Lee, T Bai, M Mecklenburg, T Aoki, ... ACS applied materials & interfaces 10 (28), 24302-24309, 2018 | 118 | 2018 |
| Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces Z Cheng, L Yates, J Shi, MJ Tadjer, KD Hobart, S Graham Apl Materials 7 (3), 2019 | 112 | 2019 |
| Rethinking phonons: The issue of disorder HR Seyf, L Yates, TL Bougher, S Graham, BA Cola, T Detchprohm, MH Ji, ... npj Computational Materials 3 (1), 49, 2017 | 100 | 2017 |
| Direct visualization of thermal conductivity suppression due to enhanced phonon scattering near individual grain boundaries A Sood, R Cheaito, T Bai, H Kwon, Y Wang, C Li, L Yates, T Bougher, ... Nano letters 18 (6), 3466-3472, 2018 | 95 | 2018 |
| Thermal boundary resistance in GaN films measured by time domain thermoreflectance with robust Monte Carlo uncertainty estimation TL Bougher, L Yates, CF Lo, W Johnson, S Graham, BA Cola Nanoscale and Microscale Thermophysical Engineering 20 (1), 22-32, 2016 | 87 | 2016 |
| Simultaneous determination of the lattice thermal conductivity and grain/grain thermal resistance in polycrystalline diamond J Anaya, T Bai, Y Wang, C Li, M Goorsky, TL Bougher, L Yates, Z Cheng, ... Acta Materialia 139, 215-225, 2017 | 80 | 2017 |
| Probing growth-induced anisotropic thermal transport in high-quality CVD diamond membranes by multifrequency and multiple-spot-size time-domain thermoreflectance Z Cheng, T Bougher, T Bai, SY Wang, C Li, L Yates, BM Foley, M Goorsky, ... ACS applied materials & interfaces 10 (5), 4808-4815, 2018 | 67 | 2018 |
| Invited Review Article: Error and uncertainty in Raman thermal conductivity measurements T Beechem, L Yates, S Graham Review of Scientific Instruments 86 (4), 2015 | 63 | 2015 |
| Tunable thermal energy transport across diamond membranes and diamond–Si interfaces by nanoscale graphoepitaxy Z Cheng, T Bai, J Shi, T Feng, Y Wang, M Mecklenburg, C Li, KD Hobart, ... ACS applied materials & interfaces 11 (20), 18517-18527, 2019 | 60 | 2019 |
| High resolution thermal characterization and simulation of power AlGaN/GaN HEMTs using micro-Raman thermography and 800 picosecond transient thermoreflectance imaging K Maize, G Pavlidis, E Heller, L Yates, D Kendig, S Graham, A Shakouri 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-8, 2014 | 59 | 2014 |
| Thermal conductance across harmonic-matched epitaxial Al-sapphire heterointerfaces Z Cheng, YR Koh, H Ahmad, R Hu, J Shi, ME Liao, Y Wang, T Bai, R Li, ... Communications Physics 3 (1), 115, 2020 | 57 | 2020 |
| Climate impacts on the cost of solar energy ME Flowers, MK Smith, AW Parsekian, DS Boyuk, JK McGrath, L Yates Energy Policy 94, 264-273, 2016 | 55 | 2016 |
| Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy N Nepal, DS Katzer, BP Downey, VD Wheeler, LO Nyakiti, DF Storm, ... Journal of Vacuum Science & Technology A 38 (6), 2020 | 41 | 2020 |
| Bulk-like intrinsic phonon thermal conductivity of micrometer-thick AlN films YR Koh, Z Cheng, A Mamun, MS Bin Hoque, Z Liu, T Bai, K Hussain, ... ACS applied materials & interfaces 12 (26), 29443-29450, 2020 | 41 | 2020 |
| Characterization of the thermal conductivity of CVD diamond for GaN-on-diamond devices L Yates, A Sood, Z Cheng, T Bougher, K Malcolm, J Cho, M Asheghi, ... 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2016 | 41 | 2016 |
| Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD A Siddique, R Ahmed, J Anderson, M Nazari, L Yates, S Graham, M Holtz, ... ACS Applied Electronic Materials 1 (8), 1387-1399, 2019 | 40 | 2019 |
| Demonstration of> 6.0-kV breakdown voltage in large area vertical GaN pn diodes with step-etched junction termination extensions L Yates, BP Gunning, MH Crawford, J Steinfeldt, ML Smith, VM Abate, ... IEEE Transactions on Electron Devices 69 (4), 1931-1937, 2022 | 38 | 2022 |
| Thermal performance of GaN/Si HEMTs using near-bandgap thermoreflectance imaging G Pavlidis, L Yates, D Kendig, CF Lo, H Marchand, B Barabadi, S Graham IEEE Transactions on Electron Devices 67 (3), 822-827, 2020 | 26 | 2020 |
Samuel GrahamUniversity of MarylandVerified email at umd.edu
