John Wellington J
John Wellington J
Other namesJohn Wellington John
Scientist, IMRE, A*STAR, Singapore
Verified email at
Cited by
Cited by
Broadband infrared photodetector based on nanostructured MoSe2–Si heterojunction extended up to 2.5 μm spectral range
JW John, V Dhyani, S Maity, S Mukherjee, SK Ray, V Kumar, S Das
Nanotechnology 31 (45), 455208, 2020
Role of Internet of Things in disaster management
JJ Wellington, P Ramesh
2017 International Conference on Innovations in Information, Embedded and …, 2017
Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors
JW John, V Dhyani, S Singh, A Jakhar, A Sarkar, S Das, SK Ray
Nanotechnology 32 (31), 315205, 2021
MoSe2/n‐GaN Heterojunction Induced High Photoconductive Gain for Low‐Noise Broadband Photodetection from Ultraviolet to Near‐Infrared Wavelengths
HK Sandhu, JW John, A Jakhar, A Sharma, A Jain, S Das
Advanced Materials Interfaces 9 (12), 2102200, 2022
Diameter-dependent photoresponse with high internal gain in a back gated single Si nanowire phototransistor
V Dhyani, A Jakhar, S Das
Journal of Physics D: Applied Physics 52 (42), 425103, 2019
Self-powered, low-noise and high-speed nanolayered MoSe2/p-GaN heterojunction photodetector from ultraviolet to near-infrared wavelengths
HK Sandhu, JW John, A Jakhar, A Sharma, A Jain, S Das
Nanotechnology 33 (30), 305201, 2022
Ultrahigh negative infrared photoconductance in highly As-doped germanium nanowires induced by hot electron trapping
JW John, V Dhyani, YM Georgiev, AS Gangnaik, S Biswas, JD Holmes, ...
ACS Applied Electronic Materials 2 (7), 1934-1942, 2020
Black-arsenic/germanium-on-insulator heterostructure field effect transistor for ultrafast polarization sensitive short-wave infrared photodetection
JW John, V Dhyani, A Jakhar, HK Sandhu, S Dewan, SK Ray, S Das
IEEE Electron Device Letters 43 (9), 1495-1498, 2022
High‐Performance Air‐Stable 2D‐WSe2/P3HT Based Inorganic–Organic Hybrid Photodetector with Broadband Visible to Near‐IR Light Detection
PD Khanikar, S Dewan, JW John, A Shukla, P Das, S Dhara, S Karak, ...
Advanced Electronic Materials 9 (12), 2300514, 2023
Probing charge traps at the 2D semiconductor/dielectric interface
JW John, A Mishra, R Debbarma, IA Verzhbitskiy, KEJ Goh
Nanoscale 15, 16807-16817, 2023
Large‐Scale Solution‐Processed Ultrathin 2D Tri‐layer Heterostructures for Photodetector Applications
P Yadav, J Wellington John, A Kumar Ganguli
ChemistrySelect 9 (10), e202304811, 2024
Nanoironing van der Waals Heterostructures toward Electrically Controlled Quantum Dots
T Talha-Dean, Y Tarn, S Mukherjee, JW John, D Huang, IA Verzhbitskiy, ...
ACS Applied Materials & Interfaces, 2024
Large area, low power MoSe 2 nanostructures based Infrared photodetectors on flexible substrates beyond $2.3\\mu\mathrm {m} $
JJ Wellington, V Dhyani, S Maity, S Mukherjee, SK Ray, S Das
2020 5th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2020
Group IV Semiconductor Nanostructures and their Heterojunctions with Layered Materials for Infrared Detection
Delhi, 0
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