| Role of Internet of Things in disaster management JJ Wellington, P Ramesh 2017 International Conference on Innovations in Information, Embedded and …, 2017 | 34 | 2017 |
| Broadband infrared photodetector based on nanostructured MoSe2–Si heterojunction extended up to 2.5 μm spectral range JW John, V Dhyani, S Maity, S Mukherjee, SK Ray, V Kumar, S Das Nanotechnology 31 (45), 455208, 2020 | 32 | 2020 |
| Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors JW John, V Dhyani, S Singh, A Jakhar, A Sarkar, S Das, SK Ray Nanotechnology 32 (31), 315205, 2021 | 18 | 2021 |
| Ultrahigh negative infrared photoconductance in highly As-doped germanium nanowires induced by hot electron trapping JW John, V Dhyani, YM Georgiev, AS Gangnaik, S Biswas, JD Holmes, ... ACS Applied Electronic Materials 2 (7), 1934-1942, 2020 | 9 | 2020 |
| Diameter-dependent photoresponse with high internal gain in a back gated single Si nanowire phototransistor V Dhyani, A Jakhar, S Das Journal of Physics D: Applied Physics 52 (42), 425103, 2019 | 6 | 2019 |
| Self-powered, low-noise and high-speed nanolayered MoSe2/p-GaN heterojunction photodetector from ultraviolet to near-infrared wavelengths HK Sandhu, JW John, A Jakhar, A Sharma, A Jain, S Das Nanotechnology 33 (30), 305201, 2022 | 2 | 2022 |
| MoSe2/n‐GaN Heterojunction Induced High Photoconductive Gain for Low‐Noise Broadband Photodetection from Ultraviolet to Near‐Infrared Wavelengths HK Sandhu, JW John, A Jakhar, A Sharma, A Jain, S Das Advanced Materials Interfaces 9 (12), 2102200, 2022 | 2 | 2022 |
| Black-Arsenic/Germanium-on-Insulator Heterostructure Field Effect Transistor for Ultrafast Polarization Sensitive Short-Wave Infrared Photodetection JW John, V Dhyani, A Jakhar, HK Sandhu, S Dewan, SK Ray, S Das IEEE Electron Device Letters 43 (9), 1495-1498, 2022 | 1 | 2022 |
| Group-IV semiconductor nanostructures and their heterojunctions with layered materials for infrared detection J Wellington J IIT Delhi, 2022 | | 2022 |
| Large area, low power MoSe 2 nanostructures based Infrared photodetectors on flexible substrates beyond $2.3\\mu\mathrm {m} $ JJ Wellington, V Dhyani, S Maity, S Mukherjee, SK Ray, S Das 2020 5th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2020 | | 2020 |
Samaresh DasIndian institute of technology, Tyndall National Institute, Hitachi Cambridge LabVerified email at care.iitd.ac.in
