| Low resistivity contact on n-type Ge using low work-function Yb with a thin TiO2 interfacial layer S Dev, N Remesh, Y Rawal, PP Manik, B Wood, S Lodha Applied Physics Letters 108 (10), 2016 | 33 | 2016 |
| An artificial synaptic transistor using an α-In 2 Se 3 van der Waals ferroelectric channel for pattern recognition N Mohta, A Rao, N Remesh, R Muralidharan, DN Nath RSC advances 11 (58), 36901-36912, 2021 | 24 | 2021 |
| Optimum carbon concentration in GaN-on-silicon for breakdown enhancement in AlGaN/GaN HEMTs N Remesh, N Mohan, S Raghavan, R Muralidharan, DN Nath IEEE Transactions on Electron Devices 67 (6), 2311-2317, 2020 | 22 | 2020 |
| Vertical current transport in AlGaN/GaN HEMTs on silicon: Experimental investigation and analytical model N Remesh, N Mohan, S Kumar, S Prabhu, I Guiney, CJ Humphreys, ... IEEE Transactions on Electron Devices 66 (1), 613-618, 2018 | 17 | 2018 |
| Trap assisted avalanche instability and safe operating area concerns in AlGaN/GaN HEMTs B Shankar, A Soni, M Singh, R Soman, H Chandrasekar, N Mohan, ... 2017 IEEE International Reliability Physics Symposium (IRPS), WB-5.1-WB-5.5, 2017 | 17 | 2017 |
| Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111) S Rathkanthiwar, A Kalra, N Remesh, A Bardhan, R Muralidharan, ... Journal of Applied Physics 127 (21), 2020 | 14 | 2020 |
| Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications N Remesh, H Chandrasekar, A Venugopalrao, S Raghavan, ... Journal of Applied Physics 130 (7), 2021 | 12 | 2021 |
| Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si S Kumar, N Remesh, SB Dolmanan, S Tripathy, S Raghavan, ... Solid-State Electronics 137, 117-122, 2017 | 11 | 2017 |
| Enabling transfer of ultrathin layers of GaN for demonstration of a heterogenous stack on copper heat spreader PVK Nittala, N Remesh, S Niranjan, S Tasneem, S Raghavan, ... IEEE Transactions on Components, Packaging and Manufacturing Technology 10 …, 2019 | 6 | 2019 |
| Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices KN Subhani, N Remesh, S Niranjan, S Raghavan, R Muralidharan, ... Solid-State Electronics 186, 108188, 2021 | 5 | 2021 |
| Buried channel normally-off AlGaN/GaN MOS-HEMT with a pn junction in GaN buffer R Soman, M Sharma, N Ramesh, D Nath, R Muralidharan, KN Bhat, ... Semiconductor Science and Technology 33 (9), 095006, 2018 | 4 | 2018 |
| A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias N Remesh, S Kumar, I Guiney, CJ Humphreys, S Raghavan, ... physica status solidi (a) 217 (7), 1900794, 2020 | 3 | 2020 |
| Gallium nitride transistor on glass using epoxy mediated substrate transfer technology NPV Krishna, N Ramesh, N Mohan, R Muralidharan, S Raghavan, ... 2017 IEEE 19th Electronics Packaging Technology Conference (EPTC), 1-3, 2017 | 2 | 2017 |
| Contact barrier height and resistivity reduction using low work-function metal (Yb)-interfacial layer-semiconductor contacts on n-type Si and Ge N Remesh, S Dev, Y Rawal, S Khopkar, PP Manik, B Wood, A Brand, ... 2015 73rd Annual Device Research Conference (DRC), 145-146, 2015 | 2 | 2015 |
| Investigation of Buffer Design and Carbon doping in AlGaN GaN HEMTs for High Breakdown Voltages N Remesh Bangalore, 2021 | 1 | 2021 |
| Ge n-channel FinFET performance enhancement using low work function metal-interfacial layer-Ge contacts PP Manik, S Dev, N Remesh, Y Rawal, S Khopkar, S Lodha 2017 International Symposium on VLSI Technology, Systems and Application …, 2017 | 1 | 2017 |
| Design of Low Power Baugh-Wooley Multiplier using CNTFET N Ramesh, R Monica Int J Res Electron Commun Technol 1 (2), 50-54p, 2013 | 1 | 2013 |
| Mission design, preflight and flight performance and observations for Pad Abort Test J Dhaoya, N Remesh, C Ravikumar, P Bhanumathy, AK Anilkumar, ... Current Science, 89-95, 2021 | | 2021 |
| An artificial synaptic transistor using an α-In₂Se₃ van der Waals ferroelectric channel for pattern recognition N Mohta, A Rao, N Remesh, R Muralidharan, DN Nath | | 2021 |
| Growth-Microstructure-Device Performance Correlations for III-nitride Optoelectronic and Power Devices on Sapphire and Silicon A Kalra, S Rathkanthiwar, N Remesh, R Muralidharan, D Nath, ... 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020 | | 2020 |
Digbijoy NathAssociate Professor at Indian Institute of ScienceVerified email at iisc.ac.in
