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Haoze Luo
Haoze Luo
Verified email at et.aau.dk
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Year
Topology review and derivation methodology of single-phase transformerless photovoltaic inverters for leakage current suppression
W Li, Y Gu, H Luo, W Cui, X He, C Xia
IEEE Transactions on Industrial Electronics 62 (7), 4537-4551, 2015
6552015
Junction temperature extraction approach with turn-off delay time for high-voltage high-power IGBT modules
H Luo, Y Chen, P Sun, W Li, X He
IEEE Transactions on Power Electronics 31 (7), 5122-5132, 2015
2182015
A short-circuit safe operation area identification criterion for SiC MOSFET power modules
PD Reigosa, F Iannuzzo, H Luo, F Blaabjerg
IEEE Transactions on Industry Applications 53 (3), 2880-2887, 2016
1022016
Decoupling-controlled triport composited DC/DC converter for multiple energy interface
W Li, C Xu, H Luo, Y Hu, X He, C Xia
IEEE Transactions on Industrial Electronics 62 (7), 4504-4513, 2014
852014
Asymmetrical Duty Cycle-Controlled LLC Resonant Converter With Equivalent Switching Frequency Doubler
S Zong, H Luo, W Li, Y Deng, X He
IEEE Transactions on Power Electronics 31 (7), 4963-4973, 2015
842015
High off-state impedance gate driver of SiC MOSFETs for crosstalk voltage elimination considering common-source inductance
C Li, Z Lu, Y Chen, C Li, H Luo, W Li, X He
IEEE Transactions on Power Electronics 35 (3), 2999-3011, 2019
742019
Role of threshold voltage shift in highly accelerated power cycling tests for SiC MOSFET modules
H Luo, F Iannuzzo, M Turnaturi
IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (2 …, 2019
672019
Medium voltage soft-switching DC/DC converter with series-connected SiC MOSFETs
Z Lu, C Li, A Zhu, H Luo, C Li, W Li, X He
IEEE Transactions on Power Electronics 36 (2), 1451-1462, 2020
652020
Enabling junction temperature estimation via collector-side thermo-sensitive electrical parameters through emitter stray inductance in high-power IGBT modules
H Luo, W Li, F Iannuzzo, X He, F Blaabjerg
IEEE Transactions on Industrial Electronics 65 (6), 4724-4738, 2017
622017
Investigation and classification of short-circuit failure modes based on three-dimensional safe operating area for high-power IGBT modules
Y Chen, W Li, F Iannuzzo, H Luo, X He, F Blaabjerg
IEEE Transactions on Power Electronics 33 (2), 1075-1086, 2017
622017
Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions
H Luo, F Iannuzzo, F Blaabjerg, M Turnaturi, E Mattiuzzo
2017 IEEE Energy Conversion Congress and Exposition (ECCE), 2506-2511, 2017
592017
Detection and localization of submodule open-circuit failures for modular multilevel converters with single ring theorem
W Zhou, J Sheng, H Luo, W Li, X He
IEEE Transactions on Power Electronics 34 (4), 3729-3739, 2018
572018
Theoretical evaluation of stability improvement brought by resonant current loop for paralleled LLC converters
S Zong, H Luo, W Li, X He, C Xia
IEEE Transactions on Industrial Electronics 62 (7), 4170-4180, 2014
542014
Online High-Power P-i-N Diode Chip Temperature Extraction and Prediction Method With Maximum Recovery Current di/dt
H Luo, W Li, X He
IEEE Transactions on Power Electronics 30 (5), 2395-2404, 2014
542014
Analytical and Experimental Investigation on A Dynamic Thermo-Sensitive Electrical Parameter With Maximum During Turn-off for High Power Trench Gate …
Y Chen, H Luo, W Li, X He, F Iannuzzo, F Blaabjerg
IEEE Transactions on Power Electronics 32 (8), 6394-6404, 2016
522016
Hybrid‐bridge transformerless photovoltaic grid‐connected inverter
W Cui, H Luo, Y Gu, W Li, B Yang, X He
IET Power Electronics 8 (3), 439-446, 2015
452015
Online Junction Temperature Extraction of SiC Power mosfets With Temperature Sensitive Optic Parameter (TSOP) Approach
C Li, H Luo, C Li, W Li, H Yang, X He
IEEE Transactions on Power Electronics 34 (10), 10143-10152, 2019
442019
Study of current density influence on bond wire degradation rate in SiC MOSFET modules
H Luo, F Iannuzzo, N Baker, F Blaabjerg, W Li, X He
IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (2 …, 2019
422019
Modern IGBT gate driving methods for enhancing reliability of high-power converters—An overview
H Luo, F Iannuzzo, PD Reigosa, F Blaabjerg, W Li, X He
Microelectronics Reliability 58, 141-150, 2016
422016
Recent advances and trend of HEV/EV‐oriented power semiconductors–an overview
G Liu, K Li, Y Wang, H Luo, H Luo
IET Power Electronics 13 (3), 394-404, 2020
412020
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