| A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices S Khandelwal, N Goyal, TA Fjeldly Electron Devices, IEEE Transactions on 58 (10), 3622-3625, 2011 | 227 | 2011 |
| Analytical modeling of bare surface barrier height and charge density in AlGaN/GaN heterostructures N Goyal, B Iniguez, TA Fjeldly Applied Physics Letters 101 (10), 103505-103505-3, 2012 | 44 | 2012 |
| Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in Al x Ga 1-x N/GaN heterostructures N Goyal, TA Fjeldly Journal of Applied Physics 113 (1), 014505-014505-5, 2013 | 32 | 2013 |
| Analytical modeling of AlGaN/AlN/GaN heterostructures including effects of distributed surface donor states N Goyal, TA Fjeldly Applied Physics Letters 105 (2), 023508, 2014 | 25 | 2014 |
| Raman spectroscopy of graphene on AlGaN/GaN heterostructures S Dusari, N Goyal, M Debiasio, A Kenda Thin Solid Films 597, 140-143, 2015 | 17 | 2015 |
| A precise physics-based compact model for 2-DEG charge density in GaAs HEMTs applicable in all regions of device operation S Khandelwal, N Goyal, TA Fjeldly Solid-State Electronics 79, 22-25, 2013 | 17 | 2013 |
| Surface donor states distribution post SiN passivation of AlGaN/GaN heterostructures N Goyal, TA Fjeldly Applied Physics Letters 105 (3), 033511, 2014 | 14 | 2014 |
| Effect of gate dielectric thickness on gate leakage in tunnel field effect transistor P Chaturvedi, N Goyal 2012 8th International Caribbean Conference on Devices, Circuits and Systems …, 2012 | 14 | 2012 |
| Determination of Surface Donor States Properties and Modeling of InAlN/AlN/GaN Heterostructures N Goyal, TA Fjeldly IEEE Transactions on Electron Devices 63 (2), 881 - 885, 2015 | 13 | 2015 |
| Surface barrier height for different Al compositions and barrier layer thicknesses in AlGaN/GaN heterostructure field effect transistors N Goyal, B Iniguez, TA Fjeldly THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International …, 2013 | 12 | 2013 |
| A New LDMOSFET with Tunneling Junction for Improved On-State Performance N Goyal, RS Saxena IEEE Electron Device Letters, 1-3, 2013 | 11 | 2013 |
| Multilayer Pt/Al based ohmic contacts for AlGaN/GaN heterostructures stable up to 600° C ambient air N Goyal, S Dusari, J Bardong, F Medjdoub, A Kenda, A Binder Solid-State Electronics 116, 107-110, 2016 | 9 | 2016 |
| Impact of Gate Metal on Surface States Distribution and Effective Surface Barrier Height in AlGaN/GaN Heterostructures N Goyal, TA Fjeldly MRS Proceedings 1538, 335-340, 2013 | 5 | 2013 |
| Graded silicon-germanium channel tunnel field effect transistor (G-TFET), an approach to increase I ON without compromising I OFF N Goyal, P Chaturvedi Semiconductor Device Research Symposium (ISDRS), 2011 International, 1-2, 2011 | 3 | 2011 |
| Design and Modeling of High-Power Semiconductor Devices with Emphasis on AlGaN/GaN HEMTs N Goyal Norges teknisk-naturvitenskapelige universitet, Fakultet for …, 2013 | 2 | 2013 |
| Erratum:“Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1− xN/GaN heterostructures”[J. Appl. Phys. 113, 014505 (2013)] N Goyal, TA Fjeldly Journal of Applied Physics 115 (24), 249901, 2014 | | 2014 |
| Application of Bare Surface Barrier Height to Assess Reliability in AlGaN/GaN Heterostructures N Goyal, TA Fjeldly International Semiconductor Device Research Symposium, 2013 | | 2013 |
| Bare Surface Barrier Height: A New Assessment of Structural Reliability in AlGaN/GaN Heterostructures N Goyal, TA Fjeldly International symposium on compound semiconductors, 2013 | | 2013 |
| 2012 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS 2012) P Chaturvedi, N Goyal | | |
| Role of Gate Leakage in Tunnel Field Effect Transistor Characteristics P Chaturvedi, N Goyal | | |
