| Performance Analysis of Double Gate n-FinFET using High-k Dielectric Materials V Kumar, R Gupta, RPP Singh, R Vaid International Journal of Innovative Research in science, engineering and …, 2016 | 27 | 2016 |
| Impact of scaling gate insulator thickness on the performance of carbon nanotube field effect transistors (CNTFETs) D Dass, R Prasher, R Vaid Journal of nano-and electronic physics, 02014-1-02014-6, 2013 | 21 | 2013 |
| TCAD performance analysis of high-K dielectrics for gate all around InAs nanowire transistor considering scaling of gate dielectric thickness R Gupta, R Vaid Microelectronic Engineering 160, 22-26, 2016 | 19 | 2016 |
| Analytical study of unit cell and molecular structures of single walled carbon nanotubes D Dass, R Prasher, R Vaid International Journal of Computational Engineering Research 2 (5), 10, 2012 | 19 | 2012 |
| Perfomance of a Double Gate Nanoscale MOSFET (DG-MOSFET) Based on Novel Channel Materials R Prasher, D Dass, R Vaid Журнал нано-та електронної фізики, 01017-1-01017-5, 2013 | 18 | 2013 |
| SiO2-Diphenic acid: An efficient and recyclable heterogeneous catalyst for one-pot synthesis of bis-(indolyl)methane derivatives in liquid phase R Vaid, M Gupta, OS Chambyal, R Gupta Journal of Chemical Sciences 127, 987-997, 2015 | 14 | 2015 |
| Structural and electrical characteristics of ALD-HfO2/n-Si gate stack with SiON interfacial layer for advanced CMOS technology R Gupta, R Rajput, R Prasher, R Vaid Solid State Sciences 59, 7-14, 2016 | 13 | 2016 |
| Flash memory devices with metal floating gate/metal nanocrystals as the charge storage layer: A status review R Rajput, R Vaid Facta Universitatis, Series: Electronics and Energetics 33 (2), 155-167, 2020 | 11 | 2020 |
| A novel trench gate floating islands power MOSFET (TG-FLIMOSFET): Two-dimensional simulation study R Vaid, N Padha Microelectronic engineering 88 (11), 3316-3326, 2011 | 11 | 2011 |
| Single walled CNT chirality dependence for electrical device applications D Dass, R Prasher, R Vaid The African Review of Physics 8, 2013 | 9 | 2013 |
| Modeling power VDMOSFET transistors: Device physics and equivalent circuit model with parameter extraction R Vaid, N Padha, A Kumar, RS Gupta, CD Parikh CSIR, 2004 | 9 | 2004 |
| Study of novel channel materials using III-V compounds with various gate dielectrics R Prasher, D Dass, R Vaid Int. J. on Organic Electronics 2, 11-18, 2013 | 7 | 2013 |
| Numerical Analysis of a Trench Gate FLIMOSFET with No Quasi-Saturation, Improved Specific OnResistance and Better Synchronous Rectifying Characteristics R Vaid, N Padha 2006 25th International Conference on Microelectronics, 207-210, 2006 | 7 | 2006 |
| Novel power VDMOSFET structure with vertical floating islands and trench gate R Vaid, N Padha CSIR, 2005 | 7 | 2005 |
| Argon annealed ALD-ZrO2/SiON gate stack for advanced CMOS devices R Gupta, D Saikia, R Vaid ECS Transactions 77 (5), 51, 2017 | 6 | 2017 |
| Improved structural and electric characterstics of Al/ALD-HfO2/Ge MOS capacitor by germanium dioxide and germanium oxynitride as interfacial layer R Prasher, D Dass, R Vaid ECS Transactions 66 (4), 315, 2015 | 6 | 2015 |
| Comparative study of power MOSFET device structures R Vaid, N Padha NISCAIR-CSIR, India, 2005 | 6 | 2005 |
| Chirality dependence of electronic band structure and density of states in single-walled carbon nanotubes D Dass, R Vaid The African Review of Physics 12, 2018 | 5 | 2018 |
| Effect of post deposition annealing on ALD-ZrO2/SiON gate stacks for advanced CMOS Technology R Gupta, R Vaid ECS Transactions 75 (17), 67, 2016 | 5 | 2016 |
| Al/HfO2/Si gate stack with improved physical and electrical parameters R Prasher, D Dass, R Vaid 2016 29th International Conference on VLSI Design and 2016 15th …, 2016 | 5 | 2016 |
Ajit KhoslaDepartment of Mechanical Systems Engineering, Faculty of Engineering, Yamagata University, YonezawaVerified email at yz.yamagata-u.ac.jp
