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Dr. Sandeep Moparthi
Dr. Sandeep Moparthi
Assistant Professor, School of Electronics Engineering, Vellore Institute of Technology, Vellore
Verified email at vit.ac.in - Homepage
Title
Cited by
Cited by
Year
Analog and RF performance evaluation of negative capacitance SOI junctionless transistor
S Moparthi, KP Adarsh, PK Tiwari, GK Saramekala
AEU-International Journal of Electronics and Communications 122, 153243, 2020
122020
Investigation of temperature and source/drain overlap impact on negative capacitance silicon nanotube FET (NC Si NTFET) with sub-60mV/decade switching
S Moparthi, PK Tiwari, VR Samoju, GK Saramekala
IEEE Transactions on Nanotechnology 19, 800-806, 2020
92020
Sensitivity analysis of silicon nanotube FET (Si NTFET) with TCAD assisted machine learning
S Moparthi, PK Tiwari, GK Saramekala
Silicon 14 (14), 9021-9031, 2022
52022
Genetic algorithm-based threshold voltage prediction of SOI JLT using multi-variable nonlinear regression
S Moparthi, PK Tiwari, GK Saramekala
2021 International Symposium on Devices, Circuits and Systems (ISDCS), 1-4, 2021
42021
Machine learning based device simulation using multi-variable non-linear regression to assess the impact of device parameter variability on threshold voltage of double gate-all …
S Moparthi, C Yadav, GK Saramekala, PK Tiwari
2020 IEEE 2nd International Conference on Circuits and Systems (ICCS), 64-67, 2020
42020
Investigation of the Electrical Properties of Double-Gate Dual-Active-Layer (DG-DAL) Thin-Film Transistor (TFT) with HfO2|La2O3|HfO2 (HLH) Sandwich Gate …
L Ramesh, S Moparthi, PK Tiwari, VR Samoju, GK Saramekala
Semiconductors 54, 1290-1295, 2020
32020
Temperature dependence of subthreshold characteristics of negative capacitance recessed-source/drain (NC RS/D) SOI MOSFET
S Moparthi, PK Tiwari, VR Samoju, GK Saramekala
2019 IEEE International Symposium on Smart Electronic Systems (iSES …, 2019
32019
Negative capacitance silicon nanotube FET: a subthreshold modeling exploration of sub-60 mV/decade swing, negative drain-induced barrier lowering, and threshold voltage roll-off
S Moparthi, PK Tiwari, GK Saramekala
Journal of Computational Electronics 22 (1), 250-259, 2023
12023
Impact of drain voltage coupling on device and circuit-level performance of negative capacitance silicon nanotube FET
S Moparthi, PK Tiwari, GK Saramekala
IEEE Transactions on Nanotechnology 21, 547-554, 2022
12022
Investigation of Subthreshold Characteristics of Negative Capacitance Single-Active Layer Double-Gate (NC-SALDG) Thin-Film Transistor (TFT)
S Moparthi, R Lavudi, SR Suddapalli, GK Saramekala
Silicon 14 (3), 1309-1314, 2022
12022
Communications (AEÜ)
S Moparthi, KP Adarsh, PK Tiwari, GK Saramekala
2020
Device And Circuit Level Performance Analysis Of Negative Capacitance Silicon Nanotube Nc Sint Fets For Low Power Logic
S Moparthi
Calicut, 0
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