Kausik Majumdar
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Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ...
Nano letters 14 (11), 6275-6280, 2014
Field-Effect Transistors With Graphene/Metal Heterocontacts
Y Du, L Yang, J Zhang, H Liu, K Majumdar, PD Kirsch, DY Peide
IEEE electron device letters 35 (5), 599-601, 2014
Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs
S Dasgupta, A Rajashekhar, K Majumdar, N Agrawal, A Razavieh, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
SOFM-MLP: a hybrid neural network for atmospheric temperature prediction
NR Pal, S Pal, J Das, K Majumdar
IEEE transactions on geoscience and remote sensing 41 (12), 2783-2791, 2003
High-performance MoS2field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm)
L Yang, K Majumdar, Y Du, H Liu, H Wu, M Hatzistergos, PY Hung, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio
K Murali, M Dandu, S Das, K Majumdar
ACS applied materials & interfaces 10 (6), 5657-5664, 2018
Benchmarking transition metal dichalcogenide MOSFET in the ultimate physical scaling limit
K Majumdar, C Hobbs, PD Kirsch
IEEE Electron Device Letters 35 (3), 402-404, 2014
Revisiting the theory of ferroelectric negative capacitance
K Majumdar, S Datta, SP Rao
IEEE Transactions on Electron Devices 63 (5), 2043-2049, 2016
Nature of carrier injection in metal/2D semiconductor interface and its implications to the limits of contact resistance
D Somvanshi, S Kallatt, C Venkatesh, S Nair, G Gupta, JK Anthony, ...
Physical Review B 96, 205423, 2017
Benchmarking and improving III-V Esaki diode performance with a record 2.2 MA/cm2 peak current density to enhance TFET drive current
D Pawlik, B Romanczyk, P Thomas, S Rommel, M Edirisooriya, ...
2012 International Electron Devices Meeting, 27.1. 1-27.1. 3, 2012
Direct observation of giant binding energy modulation of exciton complexes in monolayer
G Gupta, S Kallatt, K Majumdar
Physical Review B 96 (8), 081403, 2017
Photoresponse of atomically thin MoS 2 layers and their planar heterojunctions
S Kallatt, G Umesh, N Bhat, K Majumdar
Nanoscale 8 (33), 15213-15222, 2016
Mobile user tracking using a hybrid neural network
K Majumdar, N Das
Wireless networks 11 (3), 275-284, 2005
HFinFET: a scalable, high performance, low leakage hybrid n-channel FET
K Majumdar, P Majhi, N Bhat, R Jammy
IEEE Transactions on Nanotechnology 9 (3), 342-344, 2010
High field carrier transport in graphene: Insights from fast current transient
K Majumdar, S Kallatt, N Bhat
Applied Physics Letters 101 (12), 123505, 2012
External bias dependent direct to indirect band gap transition in graphene nanoribbon
K Majumdar, KVRM Murali, N Bhat, YM Lin
Nano letters 10 (8), 2857-2862, 2010
Benchmarking current density in staggered gap In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction Esaki tunnel diodes
B Romanczyk, P Thomas, D Pawlik, SL Rommel, WY Loh, MH Wong, ...
Applied Physics Letters 102 (21), 213504, 2013
Effective Schottky barrier height modulation using dielectric dipoles for source/drain specific contact resistivity improvement
KW Ang, K Majumdar, K Matthews, CD Young, C Kenney, C Hobbs, ...
2012 International Electron Devices Meeting, 18.6. 1-18.6. 4, 2012
Bandstructure effects in ultra-thin-body double-gate field effect transistor: A fullband analysis
K Majumdar, N Bhat
Journal of Applied Physics 103 (11), 114503, 2008
Asymmetrically Encapsulated Vertical ITO/MoS2/Cu2O Photodetector with Ultrahigh Sensitivity
S Kallatt, S Nair, K Majumdar
Small 14 (3), 1702066, 2018
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