| Demonstration of a III–nitride/silicon tandem solar cell LA Reichertz, I Gherasoiu, KM Yu, VM Kao, W Walukiewicz, JW Ager III Applied physics express 2 (12), 122202, 2009 | 88 | 2009 |
| Electron cyclotron effective mass in indium nitride M Goiran, M Millot, JM Poumirol, I Gherasoiu, W Walukiewicz, J Leotin Applied physics letters 96 (5), 2010 | 51 | 2010 |
| Determination of effective mass in InN by high-field oscillatory magnetoabsorption spectroscopy M Millot, N Ubrig, JM Poumirol, I Gherasoiu, W Walukiewicz, S George, ... Physical Review B 83 (12), 125204, 2011 | 40 | 2011 |
| Effect of stress and free-carrier concentration on photoluminescence in InN DY Song, ME Holtz, A Chandolu, A Bernussi, SA Nikishin, MW Holtz, ... Applied Physics Letters 92 (12), 2008 | 39 | 2008 |
| Gas source molecular beam epitaxy of high quality on Si(111) S Nikishin, G Kipshidze, V Kuryatkov, K Choi, Ì Gherasoiu, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 28 | 2001 |
| Electrical properties of junctions based on superlattices of AlN/AlGa(In)N V Kuryatkov, K Zhu, B Borisov, A Chandolu, I Gherasoiu, G Kipshidze, ... Applied physics letters 83 (7), 1319-1321, 2003 | 27 | 2003 |
| AlN/AlGaN Bragg reflectors grown by gas source molecular beam epitaxy G Kipshidze, V Kuryatkov, K Choi, I Gherasoiu, B Borisov, S Nikishin, ... physica status solidi (a) 188 (2), 881-884, 2001 | 27 | 2001 |
| Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration ME Holtz, I Gherasoiu, V Kuryatkov, SA Nikishin, AA Bernussi, MW Holtz Journal of Applied Physics 105 (6), 2009 | 23 | 2009 |
| High quality InxGa1–xN thin films with x > 0.2 grown on silicon I Gherasoiu, KM Yu, LA Reichertz, VM Kao, M Hawkridge, JW Ager, ... physica status solidi (b) 247 (7), 1747-1749, 2010 | 22 | 2010 |
| Multi-color light emitting devices with compositionally graded cladding group III-nitride layers grown on substrates W Walukiewicz, I Gherasoiu, LA Reichertz US Patent 9,029,867, 2015 | 19 | 2015 |
| InGaN doping for high carrier concentration in plasma‐assisted molecular beam epitaxy I Gherasoiu, KM Yu, LA Reichertz, W Walukiewicz physica status solidi (c) 11 (3‐4), 381-384, 2014 | 19 | 2014 |
| High quality AIN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy G Kipshidze, S Nikishin, V Kuryatkov, K Choi, Ì Gherasoiu, T Prokofyeva, ... Journal of electronic materials 30, 825-828, 2001 | 16 | 2001 |
| Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system I Gherasoiu, M O’Steen, T Bird, D Gotthold, A Chandolu, DY Song, SX Xu, ... Journal of Vacuum Science & Technology A 26 (3), 399-405, 2008 | 14 | 2008 |
| Photovoltaic action from InxGa1‐xN p‐n junctions with x > 0.2 grown on silicon I Gherasoiu, LA Reichertz, KM Yu, JW Ager III, VM Kao, W Walukiewicz physica status solidi c 8 (7‐8), 2466-2468, 2011 | 12 | 2011 |
| Growth mechanism of AlN by metal-organic molecular beam epitaxy HT I. Gherasoiu, S. Nikishin, G. Kipshidze, B. Borisov, A. Chandolu, C ... Journal of Applied Physics 96 (11), 2004 | 12 | 2004 |
| Tandem Photoelectrochemical Cell for Water Dissociation W Walukiewicz, I Gherasoiu US Patent App. 12/833,790, 2011 | 9 | 2011 |
| InGaN pn-junctions grown by PA-MBE: Material characterization and fabrication of nanocolumn electroluminescent devices I Gherasoiu, KM Yu, L Reichertz, W Walukiewicz Journal of Crystal Growth 425, 393-397, 2015 | 8 | 2015 |
| Growth of high quality InN on production style PA‐MBE system I Gherasoiu, M O'Steen, T Bird, D Gotthold, A Chandolu, DY Song, SX Xu, ... physica status solidi c 5 (6), 1642-1644, 2008 | 8 | 2008 |
| Multi-color light emitting devices with compositionally graded cladding group III-nitride layers grown on substrates W Walukiewicz, I Gherasoiu, L Reichertz US Patent 9,312,430, 2016 | 6 | 2016 |
| Mechanism of carrier transport in hybrid GaN/AlN/Si solar cells H Ekinci, VV Kuryatkov, I Gherasoiu, SY Karpov, SA Nikishin Journal of Electronic Materials 46, 6078-6083, 2017 | 5 | 2017 |
Sergey NikishinProfessor of Electrical Engineering, Texas Tech UniversityVerified email at ttu.edu
