Numerical modeling of triple material gate stack gate all-around (TMGSGAA) MOSFET considering quantum mechanical effects B Padmanaban, R Ramesh, D Nirmal, S Sathiyamoorthy Superlattices and Microstructures 82, 40-54, 2015 | 37 | 2015 |
A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications J Ajayan, D Nirmal, R Ramesh, S Bhattacharya, S Tayal, LMIL Joseph, ... Measurement 186, 110100, 2021 | 36 | 2021 |
Effect of interface trap charges on the performance of asymmetric dielectric modulated dual short gate tunnel FET A Pon, KSVP Tulasi, R Ramesh AEU-International Journal of Electronics and Communications 102, 1-8, 2019 | 30 | 2019 |
Influence of gate and channel engineering on multigate MOSFETs-A review R Ramesh Microelectronics Journal 66, 136-154, 2017 | 25 | 2017 |
Self-consistent 3-D numerical modeling of a uniformly doped nanoscale FinFET using interpolating wavelets R Ramesh, M Madheswaran, K Kannan Journal of computational electronics 10, 331-340, 2011 | 14 | 2011 |
Performance analysis of asymmetric dielectric modulated dual short gate tunnel field effect transistor A Pon, AS Carmel, A Bhattacharyya, R Ramesh Superlattices and Microstructures 113, 608-615, 2018 | 13 | 2018 |
Optical effects on the characteristics of a nanoscale FinFET R Ramesh, M Madheswaran, K Kannan Progress In Electromagnetics Research B 21, 235-255, 2010 | 13 | 2010 |
Analysis of black phosphorus double gate MOSFET using hybrid method for analogue/RF application R Rathinam, A Pon, S Carmel, A Bhattacharyya IET Circuits, Devices & Systems 14 (8), 1167-1172, 2020 | 12 | 2020 |
Nanoscale FinFET sensor for determining the breast cancer tissues using wavelet coefficients R Ramesh, M Madheswaran, K Kannan Journal of Mechanics in Medicine and Biology 11 (05), 1295-1314, 2011 | 9 | 2011 |
Effect of Cr doping on electronic and optical properties of mono/bilayer MoTe2 nanosheets–a first-principles study V Nagarajan, S Sriram, R Chandiramouli, R Ramesh Materials Science in Semiconductor Processing 184, 108848, 2024 | 8 | 2024 |
Bandgap scaling and negative differential resistance behavior of zigzag phosphorene antidot nanoribbons (ZPANRs) S Carmel, A Pon, N Meenakshisundaram, R Ramesh, A Bhattacharyya Physical Chemistry Chemical Physics 20 (21), 14855-14863, 2018 | 8 | 2018 |
Optimization of the geometry of a charge plasma double-gate junctionless transistor for improved RF stability A Pon, A Bhattacharyya, B Padmanaban, R Ramesh Journal of Computational Electronics 18, 906-917, 2019 | 6 | 2019 |
Zigzag phosphorene antidot nanoribbons (ZPANRs) for the detection of nucleobases: A DFT based study S Carmel, S Subramanian, MLP Tan, NE Alias, MA Riyadi, ... Journal of Applied Physics 131 (14), 2022 | 4 | 2022 |
Optimization of gate all-around junctionless transistor using response surface methodology R Ramesh, A Pon, PD Babu, S Carmel, A Bhattacharyya Silicon, 1-10, 2022 | 4 | 2022 |
Charge plasma-based phosphorene tunnel FET using a hybrid computational method A Pon, A Bhattacharyya, R Ramesh Journal of Electronic Materials 50, 3624-3633, 2021 | 4 | 2021 |
Insights on Si doping on PNRs for NDR with high PVR and diode behaviour with a high rectification ratio S Carmel, A Pon, R Ramesh, A Bhattacharyya Physica E: Low-dimensional Systems and Nanostructures 114, 113630, 2019 | 4 | 2019 |
Optical effects on the characteristics of GaAs nanoscale FinFET with vertical Gaussian doping profile R Ramesh, M Madheswaran, K Kannan Optik 124 (19), 4019-4025, 2013 | 4 | 2013 |
Physical noise model of a uniformly doped nanoscale FinFET photodetector R Ramesh, M Madheswaran, K Kannan Optik 123 (12), 1087-1094, 2012 | 4 | 2012 |
Channel and gate engineered dielectric modulated asymmetric dual short gate TFET R Ramesh, A Pon, S Carmel, A Bhattacharyya 2017 International conference on Microelectronic Devices, Circuits and …, 2017 | 3 | 2017 |
Nanoscale circuit implementation using tri-metal gate engineered nanowire MOSFET with gate stack for analog/RF applications A Bhattacharyya, R Ramesh Journal of Computational Electronics 16, 155-161, 2017 | 3 | 2017 |