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Dr. VIRANJAY M. SRIVASTAVA, MIET(UK) Royal Society, PrEng(ECSA) NRF Rated Researcher, LifeM IEEE-HKN
Dr. VIRANJAY M. SRIVASTAVA, MIET(UK) Royal Society, PrEng(ECSA) NRF Rated Researcher, LifeM IEEE-HKN
Department of Electronic Engineering, Birmingham University, UK, Honorary Asso. Prof., UKZN, RSA
Verified email at ieee.org
Title
Cited by
Cited by
Year
Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch
VM Srivastava, KS Yadav, G Singh
Microelectronics Journal 42 (10), 1124-1135, 2011
952011
Design and performance analysis of double-gate MOSFET over single-gate MOSFET for RF switch
VM Srivastava, KS Yadav, G Singh
Microelectronics Journal 42 (3), 527-534, 2011
912011
MOSFET technologies for double-pole four-throw radio-frequency switch
VM Srivastava, G Singh
Springer International Publishing, 2014
862014
Dual resonance shorted stub circular rings metamaterial absorber
D Singh, VM Srivastava
AEU-International Journal of Electronics and Communications 83, 58-66, 2018
422018
Design and analysis of IGZO thin film transistor for AMOLED pixel circuit using double-gate tri active layer channel
SK Dargar, VM Srivastava
Heliyon 5 (4), 2019
372019
Hybrid neural network approach for predicting signal propagation loss in urban microcells
J Isabona, VM Srivastava
2016 IEEE Region 10 Humanitarian Technology Conference (R10-HTC), 1-5, 2016
372016
Analysis of double-gate CMOS for double-pole four-throw RF switch design at 45-nm technology
VM Srivastava, KS Yadav, G Singh
Journal of Computational Electronics 10, 229-240, 2011
362011
Key challenges in implementing cloud computing in Indian healthcare industry
M Singh, PK Gupta, VM Srivastava
2017 pattern recognition association of South Africa and robotics and …, 2017
312017
Environment-adaptation based hybrid neural network predictor for signal propagation loss prediction in cluttered and open urban microcells
VC Ebhota, J Isabona, VM Srivastava
Wireless Personal Communications 104, 935-948, 2019
302019
Miniaturization and Gain Enhancement of Microstrip Patch Antenna Using Defected Ground with EBG.
D Singh, A Thakur, VM Srivastava
J. Commun. 13 (12), 730-736, 2018
302018
An analysis of RCS for dual-band slotted patch antenna with a thin dielectric using shorted stubs metamaterial absorber
D Singh, VM Srivastava
AEU-International Journal of Electronics and Communications 90, 53-62, 2018
302018
Performance analysis of undoped and Gaussian doped cylindrical surrounding-gate MOSFET with it's small signal modeling
H Sood, VM Srivastava, G Singh
Microelectronics Journal 57, 66-75, 2016
292016
Advanced MOSFET Technologies for Next Generation Communication Systems - Perspective and Challenges: A Review
H Sood, VM Srivastava, G Singh
Journal of Engineering Science and Technology Review 11 (3), 180-195, 2018
282018
Downlink massive MIMO systems: Achievable sum rates and energy efficiency perspective for future 5G systems
J Isabona, VM Srivastava
Wireless Personal Communications 96, 2779-2796, 2017
282017
Design and noise optimization of RF low noise amplifier for IEEE standard 802.11 a WLAN
R Kumar, M Kumar, VM Srivastava
International Journal of VLSI design & Communication Systems 3 (2), 165, 2012
282012
Performance analysis of free space optical system with spatial modulation and diversity combiners over the Gamma Gamma atmospheric turbulence
KO Odeyemi, PA Owolawi, VM Srivastava
Optics Communications 382, 205-211, 2017
262017
Capacitance-voltage measurement for characterization of a metal-gate MOS process
VM Srivastava
International journal of recent trends in engineering 1 (4), 4, 2009
262009
Channel length scaling pattern for cylindrical surrounding double-gate (CSDG) MOSFET
MA Uchechukwu, VM Srivastava
IEEE access 8, 121204-121210, 2020
252020
Realization with fabrication of double-gate MOSFET based differential amplifier
JE Pakaree, VM Srivastava
Microelectronics Journal 91, 70-83, 2019
242019
Analytical performance of the threshold voltage and subthreshold swing of CSDG MOSFET
UA Maduagwu, VM Srivastava
Journal of Low Power Electronics and Applications 9 (1), 10, 2019
242019
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