| Influence of Bi and N related impurity states on the band structure and band offsets of GaSbBiN alloys DP Samajdar, U Das, AS Sharma, S Das, S Dhar Current Applied Physics 16 (12), 1687-1694, 2016 | 22 | 2016 |
| Hydrostatic pressure dependent optoelectronic properties of InGaAsN/GaAs spherical quantum dots for laser diode applications I Mal, J Jayarubi, S Das, AS Sharma, AJ Peter, DP Samajdar physica status solidi (b) 256 (3), 1800395, 2019 | 17 | 2019 |
| Growth of dilute quaternary alloy InPNBi and its′ characterization S Das, AS Sharma, SA Gazi, S Dhar Journal of Crystal Growth 535, 125532, 2020 | 7 | 2020 |
| Dependence of heavy hole exciton binding energy and the strain distribution in GaAs1− xBix/GaAs finite spherical quantum dots on Bi content in the material S Das, AS Sharma, TD Das, S Dhar Superlattices and Microstructures 86, 221-227, 2015 | 7 | 2015 |
| Photoluminescence investigation of the properties of GaAsSb in the dilute Sb regime S Das, AS Sharma, S Bakshi, S Dhar Journal of Materials Science: Materials in Electronics 31, 6255-6262, 2020 | 5 | 2020 |
| Influence of Pb vs Ga solvents during liquid phase epitaxy on the optical and electrical properties of GaSbBi layers AS Sharma, S Das, SA Gazi, S Dhar Journal of Applied Physics 126 (15), 2019 | 5 | 2019 |
| Anomalous increase of sub-band gap photoluminescence from InPBi layers grown by liquid phase epitaxy MK Bhowal, S Das, AS Sharma, SC Das, S Dhar Materials Research Express 6 (8), 085902, 2019 | 5 | 2019 |
| Control of the composition and the structural properties of GaAsSb layers, grown by liquid phase epitaxy, by Bi addition to the growth melt AS Sharma, S Das, S Dhar Journal of Crystal Growth 545, 125739, 2020 | 3 | 2020 |
| Influence of Bi on the temperature dependent fundamental band gap parameters of GaSb1− xBix AS Sharma, S Dhar Materials Research Express 6 (4), 046208, 2019 | 2 | 2019 |
| Bi-Related below band Gap optical absorption band produced in GaSbBi after rapid thermal anneal at high temperatures MK Bhowal, S Das, AS Sharma, S Dhar Journal of Electronic Materials 48, 5131-5134, 2019 | 1 | 2019 |
| Dependence of strain distribution on In content in InGaN/GaN quantum wires and spherical quantum dots AS Sharma, S Dhar Journal of Electronic Materials 47, 1239-1243, 2018 | 1 | 2018 |
| Temperature-dependent ultrafast hot carrier dynamics in the dilute bismide alloy GaSb1− xBix (x≾ 0.4%) AS Sharma, SJ Sreerag, RN Kini Journal of Applied Physics 135 (3), 2024 | | 2024 |
| Negative thermal quenching in optically pumped GaAsBi–GaAs heterojunction p–i–n diode SJ Sreerag, AS Sharma, TBO Rockett, JPR David, RD Richards, RN Kini Applied Physics A 129 (8), 603, 2023 | | 2023 |
| Temperature-dependent electron Hall mobility in LPE-grown InPBi/InP epilayers AS Sharma, N Malathi, S Das, RN Kini Journal of Materials Science: Materials in Electronics 34 (5), 450, 2023 | | 2023 |
| Interfacial strain and related effect in III V nitride and bismide semiconductor heterojunctions and nanostructures AS Sharma Kolkata, 0 | | |
| Calculation of Strain Distribution in InGaN/GaN Quantum Dots AS Sharma, S Dhar | | |
Subhasis DasResearch Fellow, Nanyang Technological University SingaporeVerified email at ntu.edu.sg
