| Recent achievements in AMMONO-bulk method R Dwiliński, R Doradziński, J Garczyński, L Sierzputowski, R Kucharski, ... Journal of Crystal Growth 312 (18), 2499-2502, 2010 | 115 | 2010 |
| Surface morphology and structure of Ni–P, Ni–P–ZrO2, Ni–W–P, Ni–W–P–ZrO2 coatings deposited by electroless method B Szczygieł, A Turkiewicz, J Serafińczuk Surface and Coatings Technology 202 (9), 1904-1910, 2008 | 106 | 2008 |
| Nonpolar GaN substrates grown by ammonothermal method R Kucharski, M Rudziński, M Zając, R Doradziński, J Garczyński, ... Applied Physics Letters 95 (13), 2009 | 66 | 2009 |
| Influence of annealing on excitation of terbium luminescence in YAlO3 films deposited onto porous anodic alumina A Podhorodecki, M Banski, J Misiewicz, J Serafińczuk, NV Gaponenko Journal of The Electrochemical Society 157 (6), H628, 2010 | 57 | 2010 |
| Layer number dependence of the work function and optical properties of single and few layers MoS2: effect of substrate M Tamulewicz, J Kutrowska-Girzycka, K Gajewski, J Serafińczuk, ... Nanotechnology 30 (24), 245708, 2019 | 43 | 2019 |
| Photoreflectance study of exciton energies and linewidths for homoepitaxial and heteroepitaxial GaN layers R Kudrawiec, M Rudziński, J Serafinczuk, M Zając, J Misiewicz Journal of Applied Physics 105 (9), 2009 | 43 | 2009 |
| Electronic band structure of compressively strained Ge1− xSnx with x< 0.11 studied by contactless electroreflectance K Zelazna, MP Polak, P Scharoch, J Serafinczuk, M Gladysiewicz, ... Applied Physics Letters 106 (14), 2015 | 40 | 2015 |
| Raman scattering by the E2h and A1 (LO) phonons of InxGa1− xN epilayers (0.25< x< 0.75) grown by molecular beam epitaxy R Oliva, J Ibáñez, R Cuscó, R Kudrawiec, J Serafinczuk, O Martínez, ... Journal of Applied Physics 111 (6), 2012 | 37 | 2012 |
| Optical properties of Tb and Eu doped cubic YAlO3 phosphors synthesized by sol–gel method G Zatryb, A Podhorodecki, J Serafińczuk, M Motyka, M Banski, J Misiewicz, ... Optical Materials 35 (12), 2090-2094, 2013 | 30 | 2013 |
| Determination of dislocation density in GaN/sapphire layers using XRD measurements carried out from the edge of the sample J Serafińczuk, K Moszak, Ł Pawlaczyk, W Olszewski, D Pucicki, ... Journal of Alloys and Compounds 825, 153838, 2020 | 26 | 2020 |
| Thin film thickness determination using X-ray reflectivity and Savitzky-Golay algorithm J Serafinczuk, J Pietrucha, G Schroeder, TP Gotszalk Optica Applicata 41 (2), 315-322, 2011 | 26 | 2011 |
| Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method M Rudziński, R Kudrawiec, L Janicki, J Serafinczuk, R Kucharski, M Zając, ... Journal of crystal growth 328 (1), 5-12, 2011 | 26 | 2011 |
| Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates R Kucharski, M Zajac, A Puchalski, T Sochacki, M Bockowski, JL Weyher, ... Journal of Crystal Growth 427, 1-6, 2015 | 25 | 2015 |
| Photoreflectance of InN and InN: Mg layers: an evidence of Fermi level shift toward the valence band upon Mg doping in InN R Kudrawiec, T Suski, J Serafińczuk, J Misiewicz, D Muto, Y Nanishi Applied Physics Letters 93 (13), 2008 | 24 | 2008 |
| X‐ray characterization of thick GaN layers grown by HVPE R Korbutowicz, J Kozłowski, E Dumiszewska, J Serafińczuk Crystal Research and Technology: Journal of Experimental and Industrial …, 2005 | 24 | 2005 |
| Structure and optical properties of MOVPE and HVPE GaN films grown on GaN nanocrystalline powder substrate M Nyk, R Kudrawiec, J Misiewicz, R Paszkiewicz, R Korbutowicz, ... Journal of crystal growth 277 (1-4), 149-153, 2005 | 23 | 2005 |
| Optical properties of nanocrystalline Y2O3 thin films grown on quartz substrates by electron beam deposition T Wiktorczyk, P Biegański, J Serafińczuk Optical Materials 59, 150-156, 2016 | 20 | 2016 |
| Structural and optical properties of semipolar GaN substrates obtained by ammonothermal method R Kucharski, M Zajac, R Doradzinski, J Garczynski, L Sierzputowski, ... Applied Physics Express 3 (10), 101001, 2010 | 19 | 2010 |
| Anisotropic misfit strain relaxation in lattice mismatched InGaAs/GaAs heterostructures grown by MOVPE J Serafińczuk, M Dąbrowska-Szata, P Dłużewski Journal of Crystal Growth 310 (12), 3014-3018, 2008 | 18 | 2008 |
| Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism H Ashraf, R Kudrawiec, JL Weyher, J Serafinczuk, J Misiewicz, ... Journal of crystal growth 312 (16-17), 2398-2403, 2010 | 14 | 2010 |
Robert KudrawiecWroclaw University of Science and TechnologyVerified email at pwr.edu.pl
