| Self-powered, broad band, and ultrafast InGaN-based photodetector AM Chowdhury, G Chandan, R Pant, B Roul, DK Singh, KK Nanda, ... ACS applied materials & interfaces 11 (10), 10418-10425, 2019 | 60 | 2019 |
| Defect-Mediated Transport in Self-Powered, Broadband, and Ultrafast Photoresponse of a MoS2/AlN/Si-Based Photodetector DK Singh, R Pant, AM Chowdhury, B Roul, KK Nanda, SB Krupanidhi ACS Applied Electronic Materials 2 (4), 944-953, 2020 | 42 | 2020 |
| Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures R Pant, DK Singh, AM Chowdhury, B Roul, KK Nanda, SB Krupanidhi APL Materials 8 (2), 2020 | 30 | 2020 |
| Highly Responsive, Self-Powered a-GaN Based UV-A Photodetectors Driven by Unintentional Asymmetrical Electrodes R Pant, DK Singh, AM Chowdhury, B Roul, KK Nanda, SB Krupanidhi ACS Applied Electronic Materials 2 (3), 769-779, 2020 | 29 | 2020 |
| Temperature-Dependent Electrical Transport and Optoelectronic Properties of SnS2/p-Si Heterojunction DK Singh, R Pant, B Roul, AM Chowdhury, KK Nanda, SB Krupanidhi ACS Applied Electronic Materials 2 (7), 2155-2163, 2020 | 24 | 2020 |
| Double Gaussian distribution of barrier heights and self-powered infrared photoresponse of InN/AlN/Si (111) heterostructure AM Chowdhury, R Pant, B Roul, DK Singh, KK Nanda, SB Krupanidhi Journal of Applied Physics 126 (2), 2019 | 23 | 2019 |
| Different types of band alignment at MoS2/(Al, Ga, In) N heterointerfaces DK Singh, B Roul, R Pant, AM Chowdhury, KK Nanda, SB Krupanidhi Applied Physics Letters 116 (25), 2020 | 19 | 2020 |
| Photodetection Properties of Nonpolar a‐Plane GaN Grown by Three Approaches Using Plasma‐Assisted Molecular Beam Epitaxy RK Pant, DK Singh, B Roul, AM Chowdhury, G Chandan, KK Nanda, ... physica status solidi (a) 216 (18), 1900171, 2019 | 19 | 2019 |
| Highly responsive ZnO/AlN/Si heterostructure-based infrared-and visible-blind ultraviolet photodetectors with high rejection ratio B Roul, R Pant, AM Chowdhury, G Chandan, DK Singh, S Chirakkara, ... IEEE Transactions on Electron Devices 66 (3), 1345-1352, 2019 | 19 | 2019 |
| Temperature dependent “S-shaped” photoluminescence behavior of InGaN nanolayers: optoelectronic implications in harsh environment AM Chowdhury, B Roul, DK Singh, R Pant, KK Nanda, SB Krupanidhi ACS Applied Nano Materials 3 (8), 8453-8460, 2020 | 10 | 2020 |
| Electrical transport modulation of VO2/Si (111) heterojunction by engineering interfacial barrier height B Roul, DK Singh, R Pant, AM Chowdhury, KK Nanda, SB Krupanidhi Journal of Applied Physics 129 (24), 2021 | 7 | 2021 |
| Overcoming the challenges associated with the InN/InGaN heterostructure via a nanostructuring approach for broad band photodetection AM Chowdhury, DK Singh, B Roul, KK Nanda, SB Krupanidhi ACS Applied Electronic Materials 3 (9), 4243-4253, 2021 | 5 | 2021 |
| Inhomogeneity-mediated systematic reduction of the Schottky barrier in a Au/GaN nanorod film interface RK Pant, B Roul, DK Singh, AM Chowdhury, KK Nanda, SB Krupanidhi Semiconductor Science and Technology 36 (1), 015017, 2020 | 4 | 2020 |
| Reduced-graphene oxide decorated γ-In 2 Se 3/Si heterostructure-based broadband photodetectors with enhanced figures-of-merit B Roul, AM Chowdhury, M Kumari, KL Kumawat, S Das, KK Nanda, ... Materials Advances 4 (2), 596-606, 2023 | 3 | 2023 |
| Enhancement of Photoresponsivity of β-In2S3/Si Broadband Photodetector by Decorating With Reduced-Graphene Oxide B Roul, DK Singh, AM Chowdhury, M Kumari, KL Kumawat, KK Nanda, ... IEEE Transactions on Electron Devices 69 (8), 4355-4361, 2022 | 3 | 2022 |
| Dependence of defect structure on In concentration in InGaN epilayers grown on AlN/Si (111) substrate AM Chowdhury, DK Singh, B Roul, KK Nanda, SB Krupanidhi Materials Advances 3 (15), 6237-6245, 2022 | | 2022 |
| Self powered Broadband and Ultrafast Photoresponse using InN and InGaN grown on AlN Si 111 by Plasma assisted Molecular Beam Epitaxy AM Chowdhury Bangalore, 2021 | | 2021 |
| Defect mediated self-powered, broad band and ultrafast InGaN based photodetector A CHOWDHURY, R Pant, B Roul, D Singh, K Nanda, S Krupanidhi Bulletin of the American Physical Society 65, 2020 | | 2020 |
| Spectrally distinctive and highly responsive self-powered MoS2/GaN-nano/Si based photodetector D Singh, R Pant, A CHOWDHURY, B Roul, K Nanda, S Krupanidhi Bulletin of the American Physical Society 65, 2020 | | 2020 |
| InN/AlN/Si (111) semiconductor-insulator-semiconductor (SIS) heterostructure for ultrafast optical fibre communication (1550 nm) A CHOWDHURY, R Pant, B Roul, D Singh, K Nanda, S Krupanidhi Bulletin of the American Physical Society 65, 2020 | | 2020 |
S.B. KrupanidhiIndian institute of scienceVerified email at mrc.iisc.ernet.in
