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Ravi Teja Velpula
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The dawn of Ga2O3 HEMTs for high power electronics-A review
R Singh, TR Lenka, DK Panda, RT Velpula, B Jain, HQT Bui, HPT Nguyen
Materials Science in Semiconductor Processing 119, 105216, 2020
1192020
Full-color InGaN/AlGaN nanowire micro light-emitting diodes grown by molecular beam epitaxy: A promising candidate for next generation micro displays
HQT Bui, RT Velpula, B Jain, OH Aref, HD Nguyen, TR Lenka, ...
Micromachines 10 (8), 492, 2019
652019
High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes
B Jain, RT Velpula, HQT Bui, HD Nguyen, TR Lenka, TK Nguyen, ...
Optics Express 28 (1), 665-675, 2020
512020
Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure
RT Velpula, B Jain, HQT Bui, FM Shakiba, J Jude, M Tumuna, HD Nguyen, ...
Applied Optics 59 (17), 5276-5281, 2020
322020
epitaxial Growth and characterization of Alinn-Based core-Shell nanowire Light emitting Diodes operating in the Ultraviolet Spectrum
RT Velpula, B Jain, MR Philip, HD Nguyen, R Wang, HPT Nguyen
Scientific reports 10 (1), 1-10, 2020
302020
Deep red fluoride dots-in-nanoparticles for high color quality micro white light-emitting diodes
DT Tuyet, VTH Quan, B Bondzior, PJ Dereń, RT Velpula, HPT Nguyen, ...
Optics Express 28 (18), 26189-26199, 2020
282020
A novel β‐Ga2O3 HEMT with f T of 166 GHz and X‐band P OUT of 2.91 W/mm
R Singh, TR Lenka, RT Velpula, B Jain, HQT Bui, HPT Nguyen
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2021
262021
Defect detection using windowed Fourier spectrum analysis in diffraction phase microscopy
S Ajithaprasad, R Velpula, R Gannavarpu
Journal of Physics Communications 3 (2), 025006, 2019
242019
Enhancing the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with photonic crystal structures
B Jain, RT Velpula, M Tumuna, HQT Bui, J Jude, TT Pham, AV Hoang, ...
Optics Express 28 (15), 22908-22918, 2020
212020
Numerical investigation on the device performance of electron blocking layer free AlInN nanowire deep ultraviolet light-emitting diodes
RT Velpula, B Jain, HQT Bui, TT Pham, HD Nguyen, TR Lenka, ...
Optical Materials Express 10 (2), 472-483, 2020
182020
High-performance nanowire ultraviolet light-emitting diodes with potassium hydroxide and ammonium sulfide surface passivation
HQT Bui, RT Velpula, B Jian, MR Philip, HD Tong, TR Lenka, ...
Applied Optics 59 (24), 7352-7356, 2020
162020
High-performance electron-blocking-layer-free deep ultraviolet light-emitting diodes implementing a strip-in-a-barrier structure
RT Velpula, B Jain, S Velpula, HD Nguyen, HPT Nguyen
Optics Letters 45 (18), 5125-5128, 2020
152020
Enhanced hole transport in AlGaN deep ultraviolet light-emitting diodes using a double-sided step graded superlattice electron blocking layer
B Jain, RT Velpula, S Velpula, HD Nguyen, HPT Nguyen
JOSA B 37 (9), 2564-2569, 2020
142020
Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study
DK Panda, R Singh, TR Lenka, TT Pham, RT Velpula, B Jain, HQT Bui, ...
IET Circuits, Devices & Systems 14 (7), 1018-1025, 2020
122020
Full-Color III-Nitride Nanowire Light-Emitting Diodes
RT Velpula, B Jain, HQT Bui, HPT Nguyen
Journal of Advanced Engineering and Computation 3 (4), 551-588, 2019
92019
Investigation of E-mode beta-gallium oxide MOSFET for emerging nanoelectronics
R Singh, TR Lenka, RT Velpula, BHQ Thang, HPT Nguyen
2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), 1-5, 2019
92019
Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers
B Jain, RT Velpula, M Patel, SM Sadaf, HPT Nguyen
Micromachines 12 (3), 334, 2021
82021
Effects of polarized-induced doping and graded composition in an advanced multiple quantum well InGaN/GaN UV-LED for enhanced light technology
S Das, TR Lenka, FA Talukdar, RT Velpula, B Jain, HPT Nguyen, G Crupi
Engineering Research Express 4 (1), 015030, 2022
72022
Controlled carrier mean free path for the enhanced efficiency of III-nitride deep-ultraviolet light-emitting diodes
B Jain, RT Velpula, M Patel, HPT Nguyen
Applied Optics 60 (11), 3088-3093, 2021
72021
Impact of a prestrained graded InGaN/GaN interlayer towards enhanced optical characteristics of a multi-quantum well LED based on silicon substrate
S Das, TR Lenka, FA Talukdar, SM Sadaf, RT Velpula, HPT Nguyen
Applied Optics 61 (30), 8951-8958, 2022
62022
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