Bijoy Goswami
Bijoy Goswami
Asst. Professor, Dept of ETE, Assam Engineering College, Guwahati,Assam-781013
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Performance evaluation of dielectrically modulated extended gate single cavity InGaAs/Si HTFET based label-free biosensor considering non-ideal issues
S Mukhopadhyay, D Sen, B Goswami, SK Sarkar
IEEE Sensors Journal 21 (4), 4739-4746, 2020
Analytical modelling and simulation of drain doping engineered splitted drain structured TFET and its improved performance in subduing ambipolar effect
D Bhattacharjee, B Goswami, DK Dash, A Bhattacharya, SK Sarkar
IET Circuits, Devices & Systems 13 (6), 888-895, 2019
Demonstration of T-shaped channel tunnel field-effect transistors
B Goswami, D Bhattachariee, DK Dash, A Bhattacharya, SK Sarkar
2018 2nd international conference on electronics, materials engineering …, 2018
Noise immune dielectric modulated dual trench transparent gate engineered MOSFET as a label free biosensor: proposal and investigation
D Sen, A De, B Goswami, S Shee, SK Sarkar
Journal of Computational Electronics 20, 2594-2603, 2021
Impact of self-heating and nano-gap filling factor on AlGaAs/GaAs junction-less DG-MOSFET based biosensor for early stage diagnostics
D Sen, B Goswami, A Dey, P Saha, SK Sarkar
2020 IEEE Region 10 Symposium (TENSYMP), 662-665, 2020
A Noise Immune Double Suspended Gate MOSFET for Ultra Low-Power Applications
SJ Sengupta, B Goswami, P Das, SK Sarkar
Silicon, 1-11, 2021
Analytical Modeling and Simulation of Low Power Salient Source Double Gate TFET
B Goswami, D Basak, A Bhattacharya, K Kaur, S Bhowmick, SK Sarkar
2019 Devices for Integrated Circuit (DevIC), 206-210, 2019
Simulation Modelling and Study on the Impacts of Substrate Concentration and Gate Work Function in MOSFET having Doped-Pocket Substrate
P Saha, B Goswami
2018 International Conference on Computing, Power and Communication …, 2018
Validation of input/output characteristics of symmetrical double source tfet device
B Goswami, SJ Sengupta, W Reja, P Das, SK Sarkar
2021 Devices for Integrated Circuit (DevIC), 256-259, 2021
A Source Pocket Doping in PNPN-DG TFET to Preclude Ambipolar Current–Two Dimensional Simulation
B Goswami, LK Barman, A Jana, A Day, W Reja, SK Sarkar
2020 8th International Electrical Engineering Congress (IEECON), 1-4, 2020
Trapezoidal Channel Double Gate Tunnel FET Suitable for better Scalability, Speed and Low Power Application
B Goswami, P Das, A Roy, SJ Sengupta, SK Sarkar
2021 Devices for Integrated Circuit (DevIC), 260-265, 2021
Room Temperature Pt-Modified WO3/p–Si Film Gas Sensor for Detection of Methanol
A Dey, K Kumari, A Jana, B Goswami, P Nandi, SK Sarkar
Smart Trends in Computing and Communications: Proceedings of SmartCom 2020 …, 2021
Impact of trapezoidal channel in double-gate tunnel field effect transistor on ambipolar conduction for ultra low-power application
A Roy, B Goswami, U Dey, D Gayen, W Reja, SK Sarkar
2020 17th International Conference on Electrical Engineering/Electronics …, 2020
The Hypothesis of Two-Sources on TFET’s Ambipolar Current and its Quantum Confinement Effect
B Goswami, K Naskar, A Day, A Jana, SK Sarkar
2020 8th International Electrical Engineering Congress (iEECON), 1-4, 2020
Implementation of L-Shaped Dielectric Double Metal Dual-Gate TFET Toward Improved Performance Characteristics and Reduced Ambipolarity
B Goswami, S Bhowmick, A Haldar, G Paul, D Basak, SK Sarkar
Information, Photonics and Communication: Proceedings of Second National …, 2020
Drain-Doping Engineering and its Influence on Device Output Characteristics and Ambipolar Conduction on a Splitted-Drain TFET Model
B Goswami, D Bhattacharjee, A Bhattacharya, SK Sarkar
Advances in Communication, Devices and Networking, 21-27, 2019
Drug sensitivity pattern of Escherichia coli in piglet.
DK Sarma, BR Boro, B Goswami, AK Sarmah
Impact of Working Temperature on the I ON /I OFF Ratio of a Hetero Step‐Shaped Gate TFET With Improved …
B Goswami, SJ Sengupta, AJ Sarmah, NBD Choudhury
Nanodevices for Integrated Circuit Design, 83-91, 2023
Gate Centric Extended Source SOI TFET
B Goswami, R Kalita, SK Sarkar
ADBU Journal of Engineering Technology 12 (2), 2023
A Noise Immune Double Suspended Gate MOSFET for Ultra Low-Power Applications. Silicon (2021)
SKS Savio Jay Sengupta, Bijoy Goswami, Pritam Das
Silicon 2021, 2021
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