| A 2D analytical model of the channel potential and threshold voltage of double-gate (DG) MOSFETs with vertical Gaussian doping profile PK Tiwari, S Kumar, S Mittal, V Srivastava, U Pandey, S Jit 2009 International Multimedia, Signal Processing and Communication …, 2009 | 78 | 2009 |
| A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors PK Tiwari, S Dubey, M Singh, S Jit Journal of Applied Physics 108 (7), 2010 | 72 | 2010 |
| A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a vertical … S Dubey, PK Tiwari, S Jit Journal of Applied Physics 108 (3), 2010 | 67 | 2010 |
| An analytical threshold voltage model for triple-material cylindrical gate-all-around (TM-CGAA) MOSFETs S Dubey, A Santra, G Saramekala, M Kumar, PK Tiwari IEEE Transactions on Nanotechnology 12 (5), 766-774, 2013 | 57 | 2013 |
| A threshold voltage model of silicon-nanotube-based ultrathin double gate-all-around (DGAA) MOSFETs incorporating quantum confinement effects A Kumar, S Bhushan, PK Tiwari IEEE Transactions on Nanotechnology 16 (5), 868-875, 2017 | 48 | 2017 |
| Simulation study of dielectric modulated dual channel trench gate TFET-based biosensor S Kumar, Y Singh, B Singh, PK Tiwari IEEE Sensors Journal 20 (21), 12565-12573, 2020 | 46 | 2020 |
| Subthreshold modeling of tri-gate junctionless transistors with variable channel edges and substrate bias effects D Gola, B Singh, PK Tiwari IEEE Transactions on Electron Devices 65 (5), 1663-1671, 2018 | 30 | 2018 |
| Analytical modeling of subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs PK Tiwari, S Dubey, K Singh, S Jit Superlattices and Microstructures 51 (5), 715-724, 2012 | 29 | 2012 |
| Analytical modeling of threshold voltage for symmetrical silicon nano-tube field-effect-transistors (Si-NT FETs) PK Tiwari, VR Samoju, T Sunkara, S Dubey, S Jit Journal of Computational Electronics 15, 516-524, 2016 | 26 | 2016 |
| Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si–SOI-MESFETs S Jit, PK Pandey, PK Tiwari Solid-State Electronics 53 (1), 57-62, 2009 | 26 | 2009 |
| A threshold voltage model of tri-gate junctionless field-effect transistors including substrate bias effects D Gola, B Singh, PK Tiwari IEEE Transactions on Electron Devices 64 (9), 3534-3540, 2017 | 25 | 2017 |
| A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) UTB SOI MOSFETs including substrate induced surface potential effects A Kumar, PK Tiwari Solid-state electronics 95, 52-60, 2014 | 25 | 2014 |
| A subthreshold swing model for symmetric double-gate (DG) MOSFETs with vertical Gaussian doping PK Tiwari, S Jit Journal of Semiconductor Technology and Science 10 (2), 107-117, 2010 | 25 | 2010 |
| Static and quasi-static drain current modeling of tri-gate junctionless transistor with substrate bias-induced effects D Gola, B Singh, J Singh, S Jit, PK Tiwari IEEE Transactions on Electron Devices 66 (7), 2876-2883, 2019 | 24 | 2019 |
| An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed-source/drain (Re-S/D) SOI MOSFET GK Saramekala, A Santra, S Dubey, S Jit, PK Tiwari Superlattices and Microstructures 60, 580-595, 2013 | 24 | 2013 |
| A rigorous simulation based study of gate misalignment effects in gate engineered double-gate (DG) MOSFETs S Sarangi, S Bhushan, A Santra, S Dubey, S Jit, PK Tiwari Superlattices and Microstructures 60, 263-279, 2013 | 24 | 2013 |
| A two-dimensional model for the subthreshold swing of short-channel double-gate metal–oxide–semiconductor field effect transistors with a vertical Gaussian-like doping profile S Dubey, PK Tiwari, S Jit Journal of applied Physics 109 (5), 2011 | 24 | 2011 |
| Analytical modeling of subthreshold characteristics of ultra-thin double gate-all-around (DGAA) MOSFETs incorporating quantum confinement effects A Kumar, S Bhushan, PK Tiwari Superlattices and Microstructures 109, 567-578, 2017 | 23 | 2017 |
| An analytical model of threshold voltage for short-channel double-material-gate (DMG) strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs M Kumar, S Dubey, PK Tiwari, S Jit Journal of computational Electronics 12, 20-28, 2013 | 22 | 2013 |
| On-current modeling of short-channel double-gate (DG) MOSFETs with a vertical Gaussian-like doping profile S Dubey, PK Tiwari, S Jit Journal of Semiconductors 34 (5), 054001, 2013 | 21 | 2013 |
Satyabrata JitIndian Institute of Technology (Banaras Hindu University) Varanasi, IndiaVerified email at iitbhu.ac.in
