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Pramod Kumar Tiwari
Pramod Kumar Tiwari
Verified email at iitp.ac.in - Homepage
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Cited by
Cited by
Year
A 2D analytical model of the channel potential and threshold voltage of double-gate (DG) MOSFETs with vertical Gaussian doping profile
PK Tiwari, S Kumar, S Mittal, V Srivastava, U Pandey, S Jit
2009 International Multimedia, Signal Processing and Communication …, 2009
772009
A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors
PK Tiwari, S Dubey, M Singh, S Jit
Journal of Applied Physics 108 (7), 2010
732010
A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a vertical …
S Dubey, PK Tiwari, S Jit
Journal of Applied Physics 108 (3), 2010
712010
An analytical threshold voltage model for triple-material cylindrical gate-all-around (TM-CGAA) MOSFETs
S Dubey, A Santra, G Saramekala, M Kumar, PK Tiwari
IEEE Transactions on Nanotechnology 12 (5), 766-774, 2013
572013
Simulation study of dielectric modulated dual channel trench gate TFET-based biosensor
S Kumar, Y Singh, B Singh, PK Tiwari
IEEE Sensors Journal 20 (21), 12565-12573, 2020
512020
A threshold voltage model of silicon-nanotube-based ultrathin double gate-all-around (DGAA) MOSFETs incorporating quantum confinement effects
A Kumar, S Bhushan, PK Tiwari
IEEE Transactions on Nanotechnology 16 (5), 868-875, 2017
472017
Subthreshold modeling of tri-gate junctionless transistors with variable channel edges and substrate bias effects
D Gola, B Singh, PK Tiwari
IEEE Transactions on Electron Devices 65 (5), 1663-1671, 2018
312018
Analytical modeling of subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs
PK Tiwari, S Dubey, K Singh, S Jit
Superlattices and Microstructures 51 (5), 715-724, 2012
292012
A threshold voltage model of tri-gate junctionless field-effect transistors including substrate bias effects
D Gola, B Singh, PK Tiwari
IEEE Transactions on Electron Devices 64 (9), 3534-3540, 2017
262017
Analytical modeling of threshold voltage for symmetrical silicon nano-tube field-effect-transistors (Si-NT FETs)
PK Tiwari, VR Samoju, T Sunkara, S Dubey, S Jit
Journal of Computational Electronics 15, 516-524, 2016
262016
A subthreshold swing model for symmetric double-gate (DG) MOSFETs with vertical Gaussian doping
PK Tiwari, S Jit
JSTS: Journal of Semiconductor Technology and Science 10 (2), 107-117, 2010
262010
Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si–SOI-MESFETs
S Jit, PK Pandey, PK Tiwari
Solid-State Electronics 53 (1), 57-62, 2009
262009
Static and quasi-static drain current modeling of tri-gate junctionless transistor with substrate bias-induced effects
D Gola, B Singh, J Singh, S Jit, PK Tiwari
IEEE Transactions on Electron Devices 66 (7), 2876-2883, 2019
252019
A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) UTB SOI MOSFETs including substrate induced surface potential effects
A Kumar, PK Tiwari
Solid-state electronics 95, 52-60, 2014
252014
An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed-source/drain (Re-S/D) SOI MOSFET
GK Saramekala, A Santra, S Dubey, S Jit, PK Tiwari
Superlattices and Microstructures 60, 580-595, 2013
252013
Analytical modeling of subthreshold characteristics of ultra-thin double gate-all-around (DGAA) MOSFETs incorporating quantum confinement effects
A Kumar, S Bhushan, PK Tiwari
Superlattices and Microstructures 109, 567-578, 2017
242017
A rigorous simulation based study of gate misalignment effects in gate engineered double-gate (DG) MOSFETs
S Sarangi, S Bhushan, A Santra, S Dubey, S Jit, PK Tiwari
Superlattices and Microstructures 60, 263-279, 2013
242013
A two-dimensional model for the subthreshold swing of short-channel double-gate metal–oxide–semiconductor field effect transistors with a vertical Gaussian-like doping profile
S Dubey, PK Tiwari, S Jit
Journal of applied Physics 109 (5), 2011
242011
An analytical model of threshold voltage for short-channel double-material-gate (DMG) strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs
M Kumar, S Dubey, PK Tiwari, S Jit
Journal of computational Electronics 12, 20-28, 2013
222013
On-current modeling of short-channel double-gate (DG) MOSFETs with a vertical Gaussian-like doping profile
S Dubey, PK Tiwari, S Jit
Journal of Semiconductors 34 (5), 054001, 2013
212013
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