| Resistive switching in silicon suboxide films A Mehonic, S Cueff, M Wojdak, S Hudziak, O Jambois, C Labbe, ... Journal of Applied Physics 111 (7), 074507, 2012 | 236 | 2012 |
| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 182 | 2019 |
| Quantum conductance in silicon oxide resistive memory devices A Mehonic, A Vrajitoarea, S Cueff, S Hudziak, H Howe, C Labbe, R Rizk, ... Scientific reports 3, 2708, 2013 | 139 | 2013 |
| Electrically tailored resistance switching in silicon oxide A Mehonic, S Cueff, M Wojdak, S Hudziak, C Labbé, R Rizk, AJ Kenyon Nanotechnology 23 (45), 455201, 2012 | 107 | 2012 |
| Silicon Oxide (SiOx): A Promising Material for Resistance Switching? A Mehonic, AL Shluger, D Gao, I Valov, E Miranda, D Ielmini, A Bricalli, ... Advanced materials 30 (43), 1801187, 2018 | 84 | 2018 |
| Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory A Mehonic, M Buckwell, L Montesi, L Garnett, S Hudziak, S Fearn, ... Journal of Applied Physics 117 (12), 124505, 2015 | 76 | 2015 |
| Emulating the electrical activity of the neuron using a silicon oxide RRAM cell A Mehonic, AJ Kenyon Frontiers in neuroscience 10, 57, 2016 | 71 | 2016 |
| Nanoscale Transformations in Metastable, Amorphous, Silicon‐Rich Silica A Mehonic, M Buckwell, L Montesi, MS Munde, D Gao, S Hudziak, ... Advanced Materials 28 (34), 7486-7493, 2016 | 54* | 2016 |
| Defects at oxide surfaces J Jupille, G Thornton Springer, 2015 | 50 | 2015 |
| Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM M Buckwell, L Montesi, S Hudziak, A Mehonic, AJ Kenyon Nanoscale 7 (43), 18030-18035, 2015 | 50 | 2015 |
| Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices A Mehonic, MS Munde, WH Ng, M Buckwell, L Montesi, M Bosman, ... Microelectronic Engineering 178, 98-103, 2017 | 37 | 2017 |
| Intrinsic resistance switching in amorphous silicon suboxides: the role of columnar microstructure MS Munde, A Mehonic, WH Ng, M Buckwell, L Montesi, M Bosman, ... Scientific reports 7 (1), 1-7, 2017 | 30 | 2017 |
| Light-activated resistance switching in SiOx RRAM devices A Mehonic, T Gerard, AJ Kenyon Applied Physics Letters 111 (23), 233502, 2017 | 28 | 2017 |
| Simulation of inference accuracy using realistic rram devices A Mehonic, D Joksas, WH Ng, M Buckwell, AJ Kenyon Frontiers in neuroscience 13, 593, 2019 | 20 | 2019 |
| Microscopic and spectroscopic analysis of the nature of conductivity changes during resistive switching in silicon‐rich silicon oxide M Buckwell, L Montesi, A Mehonic, O Reza, L Garnett, M Munde, ... physica status solidi (c) 12 (1‐2), 211-217, 2015 | 20 | 2015 |
| Investigation of resistance switching in SiO x RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator T Sadi, A Mehonic, L Montesi, M Buckwell, A Kenyon, A Asenov Journal of Physics: Condensed Matter 30 (8), 084005, 2018 | 19 | 2018 |
| Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices Y Yang, Y Takahashi, A Tsurumaki-Fukuchi, M Arita, M Moors, M Buckwell, ... Journal of Electroceramics 39 (1-4), 73-93, 2017 | 19 | 2017 |
| Resistive switching in oxides A Mehonic, AJ Kenyon Defects at Oxide Surfaces, 401-428, 2015 | 19* | 2015 |
| Multi-channel conduction in redox-based resistive switch modelled using quantum point contact theory E Miranda, A Mehonic, J Suñé, AJ Kenyon Applied Physics Letters 103 (22), 222904, 2013 | 16 | 2013 |
| Nanosecond analog programming of substoichiometric silicon oxide resistive RAM L Montesi, M Buckwell, K Zarudnyi, L Garnett, S Hudziak, A Mehonic, ... IEEE Transactions on Nanotechnology 15 (3), 428-434, 2016 | 15 | 2016 |
Tony KenyonVice Dean (Research) | Professor of Nanoelectronic & Nanophotonic Materials, UCLVerified email at ee.ucl.ac.uk
