Adnan Mehonic
Adnan Mehonic
Assistant Professor & RAEng Research Fellow, University College London
Verified email at
Cited by
Cited by
Resistive switching in silicon suboxide films
A Mehonic, S Cueff, M Wojdak, S Hudziak, O Jambois, C Labbe, ...
Journal of Applied Physics 111 (7), 074507, 2012
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
Quantum conductance in silicon oxide resistive memory devices
A Mehonic, A Vrajitoarea, S Cueff, S Hudziak, H Howe, C Labbe, R Rizk, ...
Scientific reports 3, 2708, 2013
Electrically tailored resistance switching in silicon oxide
A Mehonic, S Cueff, M Wojdak, S Hudziak, C Labbé, R Rizk, AJ Kenyon
Nanotechnology 23 (45), 455201, 2012
Silicon Oxide (SiOx): A Promising Material for Resistance Switching?
A Mehonic, AL Shluger, D Gao, I Valov, E Miranda, D Ielmini, A Bricalli, ...
Advanced materials 30 (43), 1801187, 2018
Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory
A Mehonic, M Buckwell, L Montesi, L Garnett, S Hudziak, S Fearn, ...
Journal of Applied Physics 117 (12), 124505, 2015
Emulating the electrical activity of the neuron using a silicon oxide RRAM cell
A Mehonic, AJ Kenyon
Frontiers in neuroscience 10, 57, 2016
Nanoscale Transformations in Metastable, Amorphous, Silicon‐Rich Silica
A Mehonic, M Buckwell, L Montesi, MS Munde, D Gao, S Hudziak, ...
Advanced Materials 28 (34), 7486-7493, 2016
Defects at oxide surfaces
J Jupille, G Thornton
Springer, 2015
Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM
M Buckwell, L Montesi, S Hudziak, A Mehonic, AJ Kenyon
Nanoscale 7 (43), 18030-18035, 2015
Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices
A Mehonic, MS Munde, WH Ng, M Buckwell, L Montesi, M Bosman, ...
Microelectronic Engineering 178, 98-103, 2017
Intrinsic resistance switching in amorphous silicon suboxides: the role of columnar microstructure
MS Munde, A Mehonic, WH Ng, M Buckwell, L Montesi, M Bosman, ...
Scientific reports 7 (1), 1-7, 2017
Light-activated resistance switching in SiOx RRAM devices
A Mehonic, T Gerard, AJ Kenyon
Applied Physics Letters 111 (23), 233502, 2017
Simulation of inference accuracy using realistic rram devices
A Mehonic, D Joksas, WH Ng, M Buckwell, AJ Kenyon
Frontiers in neuroscience 13, 593, 2019
Microscopic and spectroscopic analysis of the nature of conductivity changes during resistive switching in silicon‐rich silicon oxide
M Buckwell, L Montesi, A Mehonic, O Reza, L Garnett, M Munde, ...
physica status solidi (c) 12 (1‐2), 211-217, 2015
Investigation of resistance switching in SiO x RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator
T Sadi, A Mehonic, L Montesi, M Buckwell, A Kenyon, A Asenov
Journal of Physics: Condensed Matter 30 (8), 084005, 2018
Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices
Y Yang, Y Takahashi, A Tsurumaki-Fukuchi, M Arita, M Moors, M Buckwell, ...
Journal of Electroceramics 39 (1-4), 73-93, 2017
Resistive switching in oxides
A Mehonic, AJ Kenyon
Defects at Oxide Surfaces, 401-428, 2015
Multi-channel conduction in redox-based resistive switch modelled using quantum point contact theory
E Miranda, A Mehonic, J Suñé, AJ Kenyon
Applied Physics Letters 103 (22), 222904, 2013
Nanosecond analog programming of substoichiometric silicon oxide resistive RAM
L Montesi, M Buckwell, K Zarudnyi, L Garnett, S Hudziak, A Mehonic, ...
IEEE Transactions on Nanotechnology 15 (3), 428-434, 2016
The system can't perform the operation now. Try again later.
Articles 1–20