| BEOL vertical fuse formed over air gap MA Bergendahl, JJ Demarest, CJ Penny, CJ Waskiewicz US Patent 9,666,528, 2017 | 315 | 2017 |
| Gate cut with integrated etch stop layer MA Bergendahl, AM Greene, R Venigalla US Patent 10,083,961, 2018 | 152* | 2018 |
| Gate cut with integrated etch stop layer MA Bergendahl, AM Greene, R Venigalla US Patent 10,083,961, 2018 | 128 | 2018 |
| Formation of a bottom source-drain for vertical field-effect transistors MA Bergendahl, K Cheng, FL LIE, S Mochizuki, J Wang US Patent 10,326,017, 2019 | 91* | 2019 |
| Air gap spacer for metal gates MA Bergendahl, K Cheng, FL Lie, ER Miller, JR Sporre, S Teehan US Patent 9,608,065, 2017 | 79 | 2017 |
| Nanosheet channel-to-source and drain isolation MA Bergendahl, K Cheng, FL Lie, ER Miller, JR Sporre, S Teehan US Patent 9,620,590, 2017 | 78 | 2017 |
| Forming stacked nanowire semiconductor device MA Bergendahl, K Cheng, FL Lie, ER Miller, JC Shearer, JR Sporre, ... US Patent 10,074,730, 2018 | 77 | 2018 |
| Fully on-chip MAC at 14 nm enabled by accurate row-wise programming of PCM-based weights and parallel vector-transport in duration-format P Narayanan, S Ambrogio, A Okazaki, K Hosokawa, H Tsai, A Nomura, ... IEEE Transactions on Electron Devices 68 (12), 6629-6636, 2021 | 62 | 2021 |
| Method of forming finFET of variable channel width MA Bergendahl, DV Horak, S Ponoth, CC Yang, CW Koburger III US Patent 8,896,067, 2014 | 43 | 2014 |
| Single fin cut employing angled processing methods MA Bergendahl, DV Horak, CW Koburger III, S Ponoth, CC Yang US Patent 8,906,807, 2014 | 42 | 2014 |
| Sub-lithographic semiconductor structures with non-constant pitch MA Bergendahl, DV Horak, CW Koburger III, S Ponoth, CC Yang US Patent 9,177,820, 2015 | 41 | 2015 |
| Self-aligned dielectric isolation for FinFET devices MA Bergendahl, K Cheng, DV Horak, A Khakifirooz, S Ponoth, ... US Patent 8,941,156, 2015 | 40 | 2015 |
| Direct bonded heterogeneous integration (DBHi) Si bridge K Sikka, R Bonam, Y Liu, P Andry, D Parekh, A Jain, M Bergendahl, ... 2021 IEEE 71st Electronic Components and Technology Conference (ECTC), 136-147, 2021 | 34 | 2021 |
| Vertical transport field effect transistor with precise gate length definition MA Bergendahl, K Cheng, FL LIE, ER Miller, JR Sporre, S TEEHAN US Patent 10,269,931, 2019 | 34* | 2019 |
| Air gap spacer for metal gates MA Bergendahl, K Cheng, FL LIE, ER Miller, JR Sporre, S TEEHAN US Patent 10,043,801, 2018 | 31* | 2018 |
| Formation of a bottom source-drain for vertical field-effect transistors MA Bergendahl, K Cheng, FL Lie, S Mochizuki, J Wang US Patent 9,799,765, 2017 | 26 | 2017 |
| Vertical transport field effect transistor with precise gate length definition MA Bergendahl, K Cheng, FL Lie, ER Miller, JR Sporre, S Teehan US Patent 10,014,391, 2018 | 25 | 2018 |
| Structure of UBM and solder bumps and methods of fabrication LL Belanger, MA Bergendahl, AP Giri, PA Lauro, VA Oberson, DY Shih US Patent 8,003,512, 2011 | 24 | 2011 |
| Vertical transport field effect transistor with precise gate length definition MA Bergendahl, K Cheng, FL Lie, ER Miller, JR Sporre, S Teehan US Patent 10,014,391, 2018 | 23 | 2018 |
| FinFETs and fin isolation structures MA Bergendahl, DV Horak, CW Koburger III, S Ponoth, CC Yang US Patent 8,785,284, 2014 | 23 | 2014 |
