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E. S. Kannan
E. S. Kannan
BITS PILANI K K BIRLA GOA CAMPUS
Verified email at goa.bits-pilani.ac.in
Title
Cited by
Cited by
Year
Non-degenerate n-type doping by hydrazine treatment in metal work function engineered WSe2 field-effect transistor
I Lee, S Rathi, L Li, D Lim, MA Khan, ES Kannan, GH Kim
Nanotechnology 26 (45), 455203, 2015
492015
Low temperature hydrogen sensing using reduced graphene oxide and tin oxide nanoflowers based hybrid structure
A Venkatesan, S Rathi, IY Lee, J Park, D Lim, GH Kim, ES Kannan
Semiconductor Science and Technology 31 (12), 125014, 2016
292016
Capacitance-voltage and current-voltage characteristics of graphite oxide thin films patterned by ultraviolet photolithography
I Lee, ES Kannan, GH Kim
Applied Physics Letters 95 (26), 2009
272009
Molybdenum disulfide nanoparticles decorated reduced graphene oxide: highly sensitive and selective hydrogen sensor
A Venkatesan, S Rathi, I Lee, J Park, D Lim, M Kang, HI Joh, GH Kim, ...
Nanotechnology 28 (36), 365501, 2017
262017
Energy free microwave based signal communication using ratchet effect
ES Kannan, I Bisotto, JC Portal, TJ Beck, L Jalabert
Applied Physics Letters 101 (14), 2012
252012
Memory characteristics of InAs quantum dots embedded in GaAs quantum well
ES Kannan, GH Kim, DA Ritchie
Applied Physics Letters 95 (14), 2009
252009
Photovoltage induced by ratchet effect in Si/SiGe heterostructures under microwave irradiation
ES Kannan, I Bisotto, JC Portal, R Murali, TJ Beck
Applied Physics Letters 98 (19), 2011
192011
Microwave based nanogenerator using the ratchet effect in Si/SiGe heterostructures
I Bisotto, ES Kannan, S Sassine, R Murali, TJ Beck, L Jalabert, JC Portal
Nanotechnology 22 (24), 245401, 2011
182011
High performance MoS2-based field-effect transistor enabled by hydrazine doping
D Lim, ES Kannan, I Lee, S Rathi, L Li, Y Lee, MA Khan, M Kang, J Park, ...
Nanotechnology 27 (22), 225201, 2016
162016
Short range scattering effect of InAs quantum dots in the transport properties of two dimensional electron gas
ES Kannan, GH Kim, S Kumar, I Farrer, DA Ritchie, JH Son, JM Baik, ...
Applied physics letters 90 (15), 2007
162007
Reduced graphene oxide produced by rapid-heating reduction and its use in carbon-based field-effect transistors
I Lee, J Wang, GH Kim, JH Park, ES Kannan, JH Jang, YU Kwon
Journal of Applied Physics 112 (3), 2012
102012
Highly ordered copper oxide (Cu2O) nanopillar arrays using template assisted electrodeposition technique and their temperature dependent electrical characteristics
A Venkatesan, ES Kannan
Current Applied Physics 17 (5), 806-812, 2017
92017
Charge trapping in quantum dot memory devices with different dot densities
ES Kannan, GH Kim, DA Ritchie
Journal of Physics D: Applied Physics 43 (22), 225101, 2010
92010
Experimental evidence for weak insulator-quantum Hall transitions in GaN/AlGaN two-dimensional electron systems
ES Kannan, G Kim, J Lin, J Chen, KY Chen, Z Zhang, C Liang, L Lin, ...
JOURNAL-KOREAN PHYSICAL SOCIETY 50 (6), 1643, 2007
72007
Nanotechnol
H Lee, S Rathi, L Li, D Lim, MA Khan, ES Kannan
Nanotechnol 26, 455203, 2015
62015
Anomalous conductance induced by hydrogen on ZnO and catalyzed ZnO nanoflowers
RA Roshini, K Nagpal, ES Kannan
Europhysics Letters 127 (5), 57005, 2019
52019
In situ reduced graphene oxide interlayer for improving electrode performance in zno nanorods
A Venkatesan, CK Ramesha, ES Kannan
Journal of Physics D: Applied Physics 49 (24), 245301, 2016
52016
Single crystal flake parameters of MoS2 and MoSe2 exfoliated using anodic bonding technique and its potential in rapid prototyping
C Malavika, RA Roshini, RSS Kanthi, ES Kannan
Journal of Physics Communications 4 (10), 105015, 2020
42020
Reduced graphene oxide for room temperature hydrogen storage application
A Venkatesan, RN Patel, ES Kannan
Advanced Materials Research 1086, 91-95, 2015
42015
Ratchet effect study in Si/SiGe heterostructures in the presence of asymmetrical antidots for different polarizations of microwaves
I Bisotto, ES Kannan, JC Portal, D Brown, TJ Beck, Y Krupko, L Jalabert, ...
Science and Technology of Advanced Materials 15 (4), 045005, 2014
32014
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