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Kalyan Biswas
Kalyan Biswas
MCKV Institute of Engineering
Verified email at ieee.org
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Year
Development of through silicon via (TSV) interposer technology for large die (21× 21mm) fine-pitch Cu/low-k FCBGA package
X Zhang, TC Chai, JH Lau, CS Selvanayagam, K Biswas, S Liu, D Pinjala, ...
2009 59th Electronic components and technology conference, 305-312, 2009
1332009
Fin shape influence on analog and RF performance of junctionless accumulation-mode bulk FinFETs
K Biswas, A Sarkar, CK Sarkar
Microsystem Technologies 24, 2317-2324, 2018
382018
Spacer engineering for performance enhancement of junctionless accumulation‐mode bulk FinFETs
K Biswas, A Sarkar, CK Sarkar
IET Circuits, Devices & Systems 11 (1), 80-88, 2017
322017
Impact of barrier thickness on analog, RF and linearity performance of nanoscale DG heterostructure MOSFET
K Biswas, A Sarkar, CK Sarkar
Superlattices and Microstructures 86, 95-104, 2015
322015
A review of energy harvesting technology and its potential applications
I Sil, S Mukherjee, K Biswas
ENVIRONMENTAL AND EARTH SCIENCES RESEARCH JOURNAL 4 (2), 33-38, 2017
312017
Impact of Fin width scaling on RF/Analog performance of junctionless accumulation-mode bulk FinFET
K Biswas, A Sarkar, CK Sarkar
ACM Journal on Emerging Technologies in Computing Systems (JETC) 12 (4), 1-12, 2016
202016
Design and optimization of bump structures of large die fine pitch copper/low-k FCBGA and copper post interconnections
K Biswas, S Liu, X Zhang, TC Chai
2008 10th Electronics Packaging Technology Conference, 429-434, 2008
172008
A review on machine learning approaches for predicting the effect of device parameters on performance of nanoscale MOSFETs
R Ghoshhajra, K Biswas, A Sarkar
2021 Devices for Integrated Circuit (DevIC), 489-493, 2021
132021
A comparative study of fiber Bragg grating based tilt sensors
S Saha, K Biswas
Rev. Comput. Eng. Stud. 4 (1), 41-46, 2017
132017
Effect of varying Indium concentration of InGaAs channel on device and circuit performance of nanoscale double gate heterostructure MOSFET
K Biswas, A Sarkar, CK Sarkar
Micro & Nano Letters 13 (5), 690-694, 2018
82018
Assessment of Dielectrics and Channel Doping Impact in Nanoscale Double Gate III–V MOSFET with Heavily Doped Source/Drain Region
CKS K Biswas, A Sarkar
Materials Focus 6 (2), 116-120, 2017
62017
Effects of detailed substrate modeling and solder layout design on the 1st and 2nd level solder joint reliability for the large die FCBGA
K Biswas, S Liu, X Zhang, TC Chai
EuroSimE 2008-International Conference on Thermal, Mechanical and Multi …, 2008
62008
The 1stLevel & 2ndLevel Solder Joint Reliability Co-design for Larger Die Flip Chip Package
K Biswas, S Liu, X Zhang, TC Chai
2007 9th Electronics Packaging Technology Conference, 32-36, 2007
62007
Device performance prediction of nanoscale junctionless FinFET using MISO artificial neural network
R Ghoshhajra, K Biswas, A Sarkar
Silicon 14 (13), 8141-8150, 2022
52022
Linearity and analog performance analysis of silicon junctionless bulk FinFET considering gate electrode workfunction variability and different fin aspect ratio
K Biswas, A Sarkar, CK Sarkar
Silicon, 1-10, 2022
52022
Investigation of design parameters in mems based piezoelectric vibration energy harvester
I Sil, K Biswas
2018 IEEE Electron Devices Kolkata Conference (EDKCON), 64-69, 2018
52018
Optimizing Fin aspect ratio of junctionless bulk FinFET for application in Analog/RF circuit
K Biswas, CK Sarkar
2018 IEEE Electron Devices Kolkata Conference (EDKCON), 591-595, 2018
52018
Structural design and optimization of MEMS based capacitive accelerometer
K Sanyal, K Biswas
2017 Devices for Integrated Circuit (DevIC), 294-298, 2017
52017
Development of numerical modeling approach on substrate warpage prediction
K Biswas, S Liu, X Zhang, TC Chai
2012 IEEE 14th Electronics Packaging Technology Conference (EPTC), 462-466, 2012
52012
Structural design for Cu/low-K larger die flip chip package
K Biswas, S Liu, X Zhang, TC Chai, SC Chong
2006 8th Electronics Packaging Technology Conference, 237-242, 2006
52006
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