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Sergiu Clima
Sergiu Clima
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Cited by
Year
10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
8972011
High-k dielectrics for future generation memory devices
JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ...
Microelectronic engineering 86 (7-9), 1789-1795, 2009
2942009
Endurance/Retention Trade-off onCap 1T1R Bipolar RRAM
YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ...
IEEE Transactions on electron devices 60 (3), 1114-1121, 2013
2772013
Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight
S Clima, DJ Wouters, C Adelmann, T Schenk, U Schroeder, M Jurczak, ...
Applied Physics Letters 104 (9), 2014
2172014
Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current
YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013
1392013
Dynamic ‘hour glass’ model for SET and RESET in HfO2RRAM
R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ...
2012 Symposium on VLSI Technology (VLSIT), 75-76, 2012
1182012
International Electron Devices Meeting
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
Washington DC 31 (1), 2011
1162011
Causes and consequences of the stochastic aspect of filamentary RRAM
R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ...
Microelectronic Engineering 147, 171-175, 2015
1122015
Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation
YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ...
2012 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2012
1102012
Heterospin Systems Constructed from [Cu2Ln]3+ and [Ni(mnt)2]1-,2- Tectons:  First 3p−3d−4f Complexes (mnt = Maleonitriledithiolato)
AM Madalan, N Avarvari, M Fourmigué, R Clérac, LF Chibotaru, S Clima, ...
Inorganic chemistry 47 (3), 940-950, 2008
1042008
Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell
B Govoreanu, A Redolfi, L Zhang, C Adelmann, M Popovici, S Clima, ...
2013 IEEE International Electron Devices Meeting, 10.2. 1-10.2. 4, 2013
1022013
First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism
S Clima, YY Chen, R Degraeve, M Mees, K Sankaran, B Govoreanu, ...
Applied Physics Letters 100 (13), 2012
992012
Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering
L Goux, A Fantini, G Kar, YY Chen, N Jossart, R Degraeve, S Clima, ...
2012 Symposium on VLSI Technology (VLSIT), 159-160, 2012
902012
Intrinsic program instability in HfO2 RRAM and consequences on program algorithms
A Fantini, G Gorine, R Degraeve, L Goux, CY Chen, A Redolfi, S Clima, ...
2015 IEEE International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2015
822015
Composition influence on the physical and electrical properties of SrxTi1− xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom …
N Menou, M Popovici, S Clima, K Opsomer, W Polspoel, B Kaczer, ...
Journal of Applied Physics 106 (9), 2009
722009
Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations
L Zhao, S Clima, B Magyari-Köpe, M Jurczak, Y Nishi
Applied Physics Letters 107 (1), 2015
662015
Thermally stable integrated Se-based OTS selectors with >20 MA/cm2current drive, >3.103half-bias nonlinearity, tunable threshold voltage and excellent endurance
B Govoreanu, GL Donadio, K Opsomer, W Devulder, VV Afanas' ev, ...
2017 Symposium on VLSI Technology, T92-T93, 2017
642017
Embedding fragment ab initio model potentials in CASSCF/CASPT2 calculations of doped solids: implementation and applications
B Swerts, LF Chibotaru, R Lindh, L Seijo, Z Barandiaran, S Clima, ...
Journal of Chemical Theory and Computation 4 (4), 586-594, 2008
632008
Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system
L Goux, K Sankaran, G Kar, N Jossart, K Opsomer, R Degraeve, ...
2012 Symposium on VLSI Technology (VLSIT), 69-70, 2012
622012
10× 10 nm 2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation. in 2011 Int
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
Electron Devices Meet 31, 1-31.6, 2011
592011
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