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Ankush Bag
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Impact of annealing temperature on band-alignment of PLD grown Ga2O3/Si (100) heterointerface
MK Yadav, A Mondal, S Das, SK Sharma, A Bag
Journal of Alloys and Compounds 819, 153052, 2020
432020
High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations
SK Jana, P Mukhopadhyay, S Ghosh, S Kabi, A Bag, R Kumar, D Biswas
Journal of Applied Physics 115 (17), 174507, 2014
342014
Trapping effect analysis of AlGaN/InGaN/GaN Heterostructure by conductance frequency measurement
A Chakraborty, S Ghosh, P Mukhopadhyay, SM Dinara, A Bag, ...
MRS Proc 33, 81-87, 2014
342014
Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities
R Kumar, A Bag, P Mukhopadhyay, S Das, D Biswas
Applied Surface Science 357, 922-930, 2015
332015
Extremely low dark current and detection range extension of Ga2O3 UV photodetector using Sn alloyed nanostructures
A Mondal, MK Yadav, S Shringi, A Bag
Nanotechnology 31 (29), 294002, 2020
212020
OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations
S Ghosh, S Das, SM Dinara, A Bag, A Chakraborty, P Mukhopadhyay, ...
IEEE Transactions on Electron Devices 65 (4), 1333-1339, 2018
192018
Fast response (7.6 s) acetone sensing by InGaN/GaN on Si (111) at 373 K
S Das, A Bag, R Kumar, D Biswas
IEEE Electron Device Letters 38 (3), 383-386, 2017
182017
2DEG modulation in double quantum well enhancement mode nitride HEMT
A Bag, P Das, R Kumar, P Mukhopadhyay, S Majumdar, S Kabi, D Biswas
Physica E: Low-dimensional Systems and Nanostructures 74, 59-64, 2015
152015
Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer
MK Mahata, S Ghosh, SK Jana, A Chakraborty, A Bag, P Mukhopadhyay, ...
AIP Advances 4 (11), 117120, 2014
152014
Exceptional Responsivity (> 6 kA/W) and Dark Current (< 70 fA) Tradeoff of n-Ga 2 O 3/p-CuO Quasi-Heterojunction-Based Deep UV Photodetector
A Kumar, A Nandi, A Bag
IEEE Transactions on Electron Devices 68 (1), 144-151, 2021
142021
High Responsivity of Quasi-2D Electrospun -Ga2O3-Based Deep-UV Photodetectors
A Kumar, A Bag
IEEE Photonics Technology Letters 31 (8), 619-622, 2019
142019
Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-Assisted Molecular Beam Epitaxy
S Das, S Ghosh, R Kumar, A Bag, D Biswas
IEEE Transactions on Electron Devices 64 (11), 4650-4656, 2017
132017
Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si (111) and Sapphire Substrates by MBE
P Mukhopadhyay, A Bag, U Gomes, U Banerjee, S Ghosh, S Kabi, ...
Journal of electronic materials 43 (4), 1263-1270, 2014
132014
Transition from thin film to nanostructure in low pressure chemical vapor deposition growth of β-Ga2O3: Impact of metal gallium source
A Mondal, MK Yadav, A Bag
Thin Solid Films 709, 138234, 2020
122020
Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors
S Ghosh, SM Dinara, P Mukhopadhyay, SK Jana, A Bag, A Chakraborty, ...
Applied Physics Letters 105 (7), 073502, 2014
122014
Performance enhancement of β-Ga2O3 on Si (100) based Schottky barrier diodes using REduced SURface Field
MK Yadav, A Mondal, S Shringi, SK Sharma, A Bag
Semiconductor Science and Technology 35 (8), 085009, 2020
102020
A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si (1 0 0)
P Mukhopadhyay, R Kumar, S Ghosh, A Chakraborty, A Bag, S Kabi, ...
Journal of Crystal Growth 418, 138-144, 2015
102015
Suppression of interfacial oxygen vacancies for efficient charge extraction at CZTS/TiO2 heterojunction
Nisika, K Kaur, MK Yadav, A Bag, M Kumar
Applied Physics Letters 118 (4), 041601, 2021
92021
Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon
P Mukhopadhyay, U Banerjee, A Bag, S Ghosh, D Biswas
Solid-State Electronics 104, 101-108, 2015
92015
Ultra-high responsivity (> 12.34 kA W− 1) of Ga–In bimetallic oxide nanowires based deep-UV photodetector
A Kumar, A Bag
Nanotechnology 31 (30), 304001, 2020
82020
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