| Impact of annealing temperature on band-alignment of PLD grown Ga2O3/Si (100) heterointerface MK Yadav, A Mondal, S Das, SK Sharma, A Bag Journal of Alloys and Compounds 819, 153052, 2020 | 87 | 2020 |
| Trapping effect analysis of AlGaN/InGaN/GaN Heterostructure by conductance frequency measurement A Chakraborty, S Ghosh, P Mukhopadhyay, SM Dinara, A Bag, ... MRS Proc 33, 81-87, 2014 | 45 | 2014 |
| High-resolution X-ray diffraction analysis of AlxGa1− xN/InxGa1− xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations SK Jana, P Mukhopadhyay, S Ghosh, S Kabi, A Bag, R Kumar, D Biswas Journal of Applied Physics 115 (17), 2014 | 40 | 2014 |
| Extremely low dark current and detection range extension of Ga2O3 UV photodetector using Sn alloyed nanostructures A Mondal, MK Yadav, S Shringi, A Bag Nanotechnology 31 (29), 294002, 2020 | 39 | 2020 |
| Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities R Kumar, A Bag, P Mukhopadhyay, S Das, D Biswas Applied Surface Science 357, 922-930, 2015 | 36 | 2015 |
| OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations S Ghosh, S Das, SM Dinara, A Bag, A Chakraborty, P Mukhopadhyay, ... IEEE Transactions on Electron Devices 65 (4), 1333-1339, 2018 | 30 | 2018 |
| Exceptional Responsivity (> 6 kA/W) and Dark Current (< 70 fA) Tradeoff of n-Ga 2 O 3/p-CuO Quasi-Heterojunction-Based Deep UV Photodetector A Kumar, A Nandi, A Bag IEEE Transactions on Electron Devices 68 (1), 144-151, 2021 | 25 | 2021 |
| Fast response (7.6 s) acetone sensing by InGaN/GaN on Si (111) at 373 K S Das, A Bag, R Kumar, D Biswas IEEE Electron Device Letters 38 (3), 383-386, 2017 | 22 | 2017 |
| Transition from thin film to nanostructure in low pressure chemical vapor deposition growth of β-Ga2O3: Impact of metal gallium source A Mondal, MK Yadav, A Bag Thin Solid Films 709, 138234, 2020 | 20 | 2020 |
| High Responsivity of Quasi-2D Electrospun -Ga2O3-Based Deep-UV Photodetectors A Kumar, A Bag IEEE Photonics Technology Letters 31 (8), 619-622, 2019 | 20 | 2019 |
| 2DEG modulation in double quantum well enhancement mode nitride HEMT A Bag, P Das, R Kumar, P Mukhopadhyay, S Majumdar, S Kabi, D Biswas Physica E: Low-dimensional Systems and Nanostructures 74, 59-64, 2015 | 19 | 2015 |
| Comparative DC characteristic analysis of AlGaN/GaN HEMTs grown on Si (111) and sapphire substrates by MBE P Mukhopadhyay, A Bag, U Gomes, U Banerjee, S Ghosh, S Kabi, ... Journal of electronic materials 43 (4), 1263-1270, 2014 | 19 | 2014 |
| Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-Assisted Molecular Beam Epitaxy S Das, S Ghosh, R Kumar, A Bag, D Biswas IEEE Transactions on Electron Devices 64 (11), 4650-4656, 2017 | 18 | 2017 |
| Suppression of interfacial oxygen vacancies for efficient charge extraction at CZTS/TiO2 heterojunction N Nisika, K Kaur, MK Yadav, A Bag, M Kumar Applied Physics Letters 118 (4), 2021 | 17 | 2021 |
| Performance enhancement of β-Ga2O3 on Si (100) based Schottky barrier diodes using REduced SURface Field MK Yadav, A Mondal, S Shringi, SK Sharma, A Bag Semiconductor Science and Technology 35 (8), 085009, 2020 | 17 | 2020 |
| Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer MK Mahata, S Ghosh, SK Jana, A Chakraborty, A Bag, P Mukhopadhyay, ... AIP Advances 4 (11), 2014 | 17 | 2014 |
| Substrate orientation dependent current transport mechanisms in β-Ga2O3/Si based Schottky barrier diodes MK Yadav, A Mondal, SK Sharma, A Bag Journal of Vacuum Science & Technology A 39 (3), 2021 | 15 | 2021 |
| Ultra-high responsivity (> 12.34 kA W− 1) of Ga–In bimetallic oxide nanowires based deep-UV photodetector A Kumar, A Bag Nanotechnology 31 (30), 304001, 2020 | 15 | 2020 |
| Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors S Ghosh, SM Dinara, P Mukhopadhyay, SK Jana, A Bag, A Chakraborty, ... Applied Physics Letters 105 (7), 2014 | 14 | 2014 |
| Evaluation of diode characteristics for fully vertical β-Ga2O3 on silicon (100) substrate MK Yadav, SK Sharma, A Bag Journal of Materials Science: Materials in Electronics 31, 13845-13856, 2020 | 12 | 2020 |
Dhrubes BiswasProfessor of Electronics, Indian Institute of Technology, KharagpurVerified email at ece.iitkgp.ernet.in
