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Tomoteru Fukumura
Tomoteru Fukumura
Verified email at tohoku.ac.jp
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Year
Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide
Y Matsumoto, M Murakami, T Shono, T Hasegawa, T Fukumura, ...
Science 291 (5505), 854-856, 2001
31712001
An oxide-diluted magnetic semiconductor: Mn-doped ZnO
T Fukumura, Z Jin, A Ohtomo, H Koinuma, M Kawasaki
Applied physics letters 75 (21), 3366-3368, 1999
8711999
High throughput fabrication of transition-metal-doped epitaxial ZnO thin films: A series of oxide-diluted magnetic semiconductors and their properties
Z Jin, T Fukumura, M Kawasaki, K Ando, H Saito, T Sekiguchi, YZ Yoo, ...
Applied Physics Letters 78 (24), 3824-3826, 2001
7762001
Magnetic properties of Mn-doped ZnO
T Fukumura, Z Jin, M Kawasaki, T Shono, T Hasegawa, S Koshihara, ...
Applied Physics Letters 78 (7), 958-960, 2001
7292001
Magneto-optical properties of ZnO-based diluted magnetic semiconductors
K Ando, H Saito, Z Jin, T Fukumura, M Kawasaki, Y Matsumoto, ...
Journal of Applied Physics 89 (11), 7284-7286, 2001
565*2001
Electrically induced ferromagnetism at room temperature in cobalt-doped titanium dioxide
Y Yamada, K Ueno, T Fukumura, HT Yuan, H Shimotani, Y Iwasa, L Gu, ...
Science 332 (6033), 1065-1067, 2011
5432011
Modeling and simulation of polycrystalline ZnO thin-film transistors
FM Hossain, J Nishii, S Takagi, A Ohtomo, T Fukumura, H Fujioka, ...
Journal of Applied Physics 94 (12), 7768-7777, 2003
4142003
High mobility thin film transistors with transparent ZnO channels
J Nishii, FM Hossain, S Takagi, T Aita, K Saikusa, Y Ohmaki, I Ohkubo, ...
Japanese journal of applied physics 42 (4A), L347, 2003
3942003
Anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor
H Toyosaki, T Fukumura, Y Yamada, K Nakajima, T Chikyow, ...
Nature materials 3 (4), 221-224, 2004
3212004
Exploration of oxide-based diluted magnetic semiconductors toward transparent spintronics
T Fukumura, Y Yamada, H Toyosaki, T Hasegawa, H Koinuma, ...
Applied Surface Science 223 (1-3), 62-67, 2004
2872004
Magnetic oxide semiconductors
T Fukumura, H Toyosaki, Y Yamada
Semiconductor Science and Technology 20 (4), S103, 2005
2792005
Rutile-type oxide-diluted magnetic semiconductor: Mn-doped
H Kimura, T Fukumura, M Kawasaki, K Inaba, T Hasegawa, H Koinuma
Applied Physics Letters 80 (1), 94-96, 2002
2552002
Ferromagnetism in Co-doped TiO2 rutile thin films grown by laser molecular beam epitaxy
Y Matsumoto, R Takahashi, M Murakami, T Koida, XJ Fan, T Hasegawa, ...
Japanese Journal of Applied Physics 40 (11B), L1204, 2001
2342001
Electronic structure of the oxide-diluted magnetic semiconductor Zn 1− x Mn x O
T Mizokawa, T Nambu, A Fujimori, T Fukumura, M Kawasaki
Physical Review B 65 (8), 085209, 2002
2172002
S doping in ZnO film by supplying ZnS species with pulsed-laser-deposition method
YZ Yoo, ZW Jin, T Chikyow, T Fukumura, M Kawasaki, H Koinuma
Applied physics letters 81 (20), 3798-3800, 2002
2082002
Rapid construction of a phase diagram of doped Mott insulators with a composition-spread approach
T Fukumura, M Ohtani, M Kawasaki, Y Okimoto, T Kageyama, T Koida, ...
Applied Physics Letters 77 (21), 3426-3428, 2000
1972000
Transparent polymer Schottky contact for a high performance visible-blind ultraviolet photodiode based on ZnO
M Nakano, T Makino, A Tsukazaki, K Ueno, A Ohtomo, T Fukumura, ...
Applied Physics Letters 93 (12), 2008
1792008
Combinatorial laser MBE synthesis of 3d ion doped epitaxial ZnO thin films
Z Jin, M Murakami, T Fukumura, Y Matsumoto, A Ohtomo, M Kawasaki, ...
Journal of crystal growth 214, 55-58, 2000
1582000
ZnO–CoO solid solution thin films
YZ Yoo, T Fukumura, Z Jin, K Hasegawa, M Kawasaki, P Ahmet, ...
Journal of Applied physics 90 (8), 4246-4250, 2001
1532001
Schottky contact on a ZnO (0001) single crystal with conducting polymer
M Nakano, A Tsukazaki, RY Gunji, K Ueno, A Ohtomo, T Fukumura, ...
Applied Physics Letters 91 (14), 2007
1522007
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