| Ion implantation doping and isolation of GaN SJ Pearton, CB Vartuli, JC Zolper, C Yuan, RA Stall Applied physics letters 67 (10), 1435-1437, 1995 | 379 | 1995 |
| Semiconductor manufacturing using modular substrates M Antonell, EC Houge, N Patel, LE Plew, C Vartuli US Patent 6,713,409, 2004 | 204 | 2004 |
| High temperature electron cyclotron resonance etching of GaN, InN, and AlN RJ Shul, SP Kilcoyne, M Hagerott Crawford, JE Parmeter, CB Vartuli, ... Applied Physics Letters 66 (14), 1761-1763, 1995 | 169 | 1995 |
| Application of focused ion beam lift‐out specimen preparation to TEM, SEM, STEM, AES and SIMS analysis FA Stevie, CB Vartuli, LA Giannuzzi, TL Shofner, SR Brown, B Rossie, ... Surface and interface analysis 31 (5), 345-351, 2001 | 135 | 2001 |
| Dry Etch Damage In InN, InGaN and InAIN SJ Pearton, JW Lee, JD MacKenzie, CB Vartuli, SM Donovan, ... MRS Proceedings 423, 163, 1996 | 119 | 1996 |
| Wet chemical etching survey of III-nitrides CB Vartuli, SJ Pearton, CR Abernathy, JD MacKenzie, F Ren, JC Zolper, ... Solid-State Electronics 41 (12), 1947-1951, 1997 | 91 | 1997 |
| ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides CB Vartuli, SJ Pearton, JW Lee, J Hong, JD MacKenzie, CR Abernathy, ... Applied physics letters 69 (10), 1426-1428, 1996 | 85 | 1996 |
| High temperature surface degradation of III–V nitrides CB Vartuli, SJ Pearton, CR Abernathy, JD MacKenzie, ES Lambers, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 83 | 1996 |
| Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides CB Vartuli, JD MacKenzie, JW Lee, CR Abernathy, SJ Pearton, RJ Shul Journal of applied physics 80 (7), 3705-3709, 1996 | 81 | 1996 |
| Cl 2/Ar and CH 4/H 2/Ar dry etching of III endash V nitrides CB Vartuli, JD MacKenzie, JW Lee, CR Abernathy, SJ Pearton, RJ Shul | 81* | 1996 |
| Wet chemical etching of AlN and InAlN in KOH solutions CB Vartuli, SJ Pearton, JW Lee, CR Abernathy, JD MacKenzie, JC Zolper, ... Journal of the Electrochemical Society 143 (11), 3681-3684, 1996 | 76 | 1996 |
| High rate electron cyclotron resonance etching of GaN, InN, and AlN RJ Shul, AJ Howard, SJ Pearton, CR Abernathy, CB Vartuli, PA Barnes, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995 | 61 | 1995 |
| Effect of dry etching on surface properties of III-nitrides F Ren, JR Lothian, SJ Pearton, CR Abernahty, CB Vartuli, JD MacKenzie, ... Journal of Electronic Materials 26 (11), 1287-1291, 1997 | 57 | 1997 |
| Ion implantation and rapid thermal processing of Ill-V nitrides JC Zolper, M Hagerott Crawford, SJ Pearton, CR Abernathy, CB Vartuli, ... Journal of Electronic Materials 25 (5), 839-844, 1996 | 53 | 1996 |
| Implantation and redistribution of dopants and isolation species in GaN and related compounds RG Wilson, CB Vartuli, CR Abernathy, SJ Pearton, JM Zavada Solid-state electronics 38 (7), 1329-1333, 1995 | 52 | 1995 |
| Temperature dependent electron cyclotron resonance etching of InP, GaP, and GaAs RJ Shul, AJ Howard, CB Vartuli, PA Barnes, W Seng Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 14 (3 …, 1996 | 47 | 1996 |
| The incorporation of hydrogen into III-V nitrides during processing SJ Pearton, RJ Shul, RG Wilson, F Ren, JM Zavada, CR Abernathy, ... Journal of electronic materials 25 (5), 845-850, 1996 | 46 | 1996 |
| Nitrogen and fluorine ion implantation in InxGa1− xN JC Zolper, SJ Pearton, CR Abernathy, CB Vartuli Applied physics letters 66 (22), 3042-3044, 1995 | 46 | 1995 |
| Approach to CD-SEM metrology utilizing the full waveform signal JM McIntosh, BC Kane, JB Bindell, CB Vartuli 23rd Annual International Symposium on Microlithography, 51-60, 1998 | 45 | 1998 |
| Comparison of inductively coupled plasma and /H etching of III-nitrides H Cho, CB Vartuli, SM Donovan, CR Abernathy, SJ Pearton, RJ Shul, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (3 …, 1998 | 44 | 1998 |
