| Impact of annealing temperature on band-alignment of PLD grown Ga2O3/Si (100) heterointerface MK Yadav, A Mondal, S Das, SK Sharma, A Bag Journal of Alloys and Compounds 819, 153052, 2020 | 87 | 2020 |
| Extremely low dark current and detection range extension of Ga2O3 UV photodetector using Sn alloyed nanostructures A Mondal, MK Yadav, S Shringi, A Bag Nanotechnology 31 (29), 294002, 2020 | 39 | 2020 |
| Vitreous substitutes: An overview of the properties, importance, and development I Yadav, SD Purohit, H Singh, S Bhushan, MK Yadav, T Velpandian, ... Journal of Biomedical Materials Research Part B: Applied Biomaterials 109 (8 …, 2021 | 24 | 2021 |
| Transition from thin film to nanostructure in low pressure chemical vapor deposition growth of β-Ga2O3: Impact of metal gallium source A Mondal, MK Yadav, A Bag Thin Solid Films 709, 138234, 2020 | 20 | 2020 |
| Suppression of interfacial oxygen vacancies for efficient charge extraction at CZTS/TiO2 heterojunction N Nisika, K Kaur, MK Yadav, A Bag, M Kumar Applied Physics Letters 118 (4), 2021 | 17 | 2021 |
| Performance enhancement of β-Ga2O3 on Si (100) based Schottky barrier diodes using REduced SURface Field MK Yadav, A Mondal, S Shringi, SK Sharma, A Bag Semiconductor Science and Technology 35 (8), 085009, 2020 | 17 | 2020 |
| Substrate orientation dependent current transport mechanisms in β-Ga2O3/Si based Schottky barrier diodes MK Yadav, A Mondal, SK Sharma, A Bag Journal of Vacuum Science & Technology A 39 (3), 2021 | 15 | 2021 |
| Evaluation of diode characteristics for fully vertical β-Ga2O3 on silicon (100) substrate MK Yadav, SK Sharma, A Bag Journal of Materials Science: Materials in Electronics 31, 13845-13856, 2020 | 12 | 2020 |
| Interface Engineering of CZTS/TiO2 Heterojunction Using Wide‐Bandgap Ga2O3 Passivation Interlayer for Efficient Charge Extraction Nisika, A Ghosh, D Kaur, K Kaur, MK Yadav, A Bag, M Kumar physica status solidi (a) 219 (14), 2200001, 2022 | 9 | 2022 |
| Broad Range (254–302 nm) and High Performance Ga2O3:SnO2 Based Deep UV Photodetector A Mondal, S Nandi, MK Yadav, A Nandi, A Bag IEEE Transactions on Nanotechnology 21, 320-327, 2022 | 8 | 2022 |
| Probing Interface Trapping Characteristics of Au/β-Ga2O3 Schottky Barrier Diode on Si (100) MK Yadav, A Mondal, SK Sharma, A Bag IEEE Transactions on Device and Materials Reliability 21 (4), 613-619, 2021 | 7 | 2021 |
| A complete analytical potential based solution for a 4H-SiC MOSFET in nanoscale MK Yadav, KP Pradhan, PK Sahu Advances in Natural Sciences: Nanoscience and Nanotechnology 7 (2), 025011, 2016 | 5 | 2016 |
| Integration of β-Ga2O3 on Si (100) for Lateral Schottky Barrier Diodes MK Yadav, A Mondal, S Kumar, SK Sharma, A Bag 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 2 | 2021 |
| Unveiling Thermal Effects on Sn-Doped -GaO Schottky Barrier Diodes on Sapphire for High-Temperature Power Electronics MK Yadav, A Mondal, SK Sharma, A Bag IEEE Transactions on Electron Devices, 2023 | | 2023 |
| A new strategy of defect passivation in kesterite absorber layer to engineer the band tailing for efficient carrier transport A Bag, K Kaur, A Ghosh, MK Yadav, M Kumar | | 2022 |
| A new strategy of defect passivation in kesterite absorber layer to engineer the band tailing for efficient carrier transport Nisika, A Ghosh, K Kaur, MK Yadav, A Bag, M Kumar Applied Physics A 128 (12), 1107, 2022 | | 2022 |
| Suppression of interfacial oxygen vacancies for efficient charge extraction at CZTS/TiO KK Nisika, MK Yadav, A Bag, M Kumar | | 2021 |
| Analytical Modeling of Nanoscale 4H-SiC MOSFETs for High Power Applications MK Yadav | | 2016 |
Ankush BagIndian Institute of Technology GuwahatiVerified email at iitg.ac.in
