Martin L. Green
Martin L. Green
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Ultrathin (<4 nm) and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
ML Green, EP Gusev, R Degraeve, EL Garfunkel
Journal of Applied Physics 90 (5), 2057-2121, 2001
Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates
EA Fitzgerald, YH Xie, ML Green, D Brasen, AR Kortan, J Michel, YJ Mii, ...
Applied physics letters 59 (7), 811-813, 1991
Nucleation and growth of atomic layer deposited gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide or Si–O–N) underlayers
ML Green, MY Ho, B Busch, GD Wilk, T Sorsch, T Conard, B Brijs, ...
Journal of Applied Physics 92 (12), 7168-7174, 2002
Chemical vapor deposition of ruthenium and ruthenium dioxide films
ML Green, ME Gross, LE Papa, KJ Schnoes, D Brasen
Journal of the Electrochemical Society 132 (11), 2677, 1985
Growth and characterization of ultrathin nitrided silicon oxide films
EP Gusev, HC Lu, EL Garfunkel, T Gustafsson, ML Green
IBM journal of research and development 43 (3), 265-286, 1999
The vertical replacement-gate (VRG) MOSFET: A 50-nm vertical MOSFET with lithography-independent gate length
JM Hergenrother, D Monroe, FP Klemens, A Komblit, GR Weber, ...
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices
ML Ostraat, JW De Blauwe, ML Green, LD Bell, ML Brongersma, ...
Applied Physics Letters 79 (3), 433-435, 2001
Semiconductor heterostructure devices with strained semiconductor layers
D Brasen, EA Fitzgerald Jr, ML Green, DP Monroe, PJ Silverman, YH Xie
US Patent 5,442,205, 1995
Dielectric films for advanced microelectronics
M Baklanov, M Green, K Maex
John Wiley & Sons, 2007
Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials
ML Green, I Takeuchi, JR Hattrick-Simpers
Journal of Applied Physics 113 (23), 9_1, 2013
Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness
ML Green, D Brasen, KW Evans‐Lutterodt, LC Feldman, K Krisch, ...
Applied physics letters 65 (7), 848-850, 1994
Morphology and crystallization kinetics in thin films grown by atomic layer deposition
MY Ho, H Gong, GD Wilk, BW Busch, ML Green, PM Voyles, DA Muller, ...
Journal of Applied Physics 93 (3), 1477-1481, 2003
Field effect devices and capacitors with improved thin film dielectrics and method for making same
D Brasen, EL Garfunkel, ML Green, EP Gusev
US Patent 5,861,651, 1999
The 2019 materials by design roadmap
K Alberi, MB Nardelli, A Zakutayev, L Mitas, S Curtarolo, A Jain, M Fornari, ...
Journal of Physics D: Applied Physics 52 (1), 013001, 2018
Multi-component high-K gate dielectrics for the silicon industry
L Manchanda, MD Morris, ML Green, RB Van Dover, F Klemens, ...
Microelectronic Engineering 59 (1-4), 351-359, 2001
Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process
ML Green, GD Wilk
US Patent 6,797,525, 2004
Fulfilling the promise of the materials genome initiative with high-throughput experimental methodologies
ML Green, CL Choi, JR Hattrick-Simpers, AM Joshi, I Takeuchi, SC Barron, ...
Applied Physics Reviews 4 (1), 011105, 2017
Suppressed crystallization of Hf-based gate dielectrics by controlled addition of using atomic layer deposition
MY Ho, H Gong, GD Wilk, BW Busch, ML Green, WH Lin, A See, SK Lahiri, ...
Applied Physics Letters 81 (22), 4218-4220, 2002
Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon
MM Frank, YJ Chabal, ML Green, A Delabie, B Brijs, GD Wilk, MY Ho, ...
Applied physics letters 83 (4), 740-742, 2003
Ultraclean two-stage aerosol reactor for production of oxide-passivated silicon nanoparticles for novel memory devices
ML Ostraat, JW De Blauwe, ML Green, LD Bell, HA Atwater, RC Flagan
Journal of The Electrochemical Society 148 (5), G265, 2001
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