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Jaya Madan | PhD
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Year
Interfacial Charge Analysis of Heterogeneous Gate Dielectric-Gate All Around-Tunnel FET for Improved Device Reliability
J Madan, R Chaujar
IEEE Transactions on Device and Materials Reliability 16 (2), 227-234, 2016
1472016
Device simulation of 17.3% efficient lead-free all-perovskite tandem solar cell
J Madan, R Pandey, R Sharma
Solar Energy 197, 212-221, 2020
762020
Numerical Simulation of N+ Source Pocket PIN-GAA-Tunnel FET: Impact of Interface Trap Charges and Temperature
J Madan, R Chaujar
IEEE Transactions on Electron Devices 64 (4), 1482-1488, 2017
732017
Gate drain underlapped-PNIN-GAA-TFET for comprehensively upgraded analog/RF performance
J Madan, R Chaujar
Superlattices and Microstructures, 2016
592016
Gate drain-overlapped-asymmetric gate dielectric-GAA-TFET: a solution for suppressed ambipolarity and enhanced ON state behavior
J Madan, R Chaujar
Applied Physics A Materials Science and Processing 122 (11), 973, 2016
342016
Temperature associated reliability issues of heterogeneous gate dielectric-gate all around-tunnel FET
J Madan, R Chaujar
IEEE Transactions on Nanotechnology, 2017
332017
Mathematical modeling insight of hetero gate dielectric-dual material gate-GAA-tunnel FET for VLSI/analog applications
J Madan, RS Gupta, R Chaujar
Microsystem Technologies 23 (9), 4091–4098, 2017
302017
Performance investigation of heterogeneous gate dielectric‑gate metal engineered–gate all around‑tunnel FET for RF applications
J Madan, RS Gupta, R Chaujar
Microsystem Technologies 23 (9), 4081–4090, 2017
292017
Toward the design of monolithic 23.1% efficient hysteresis and moisture free perovskite/c-Si HJ tandem solar cell: a numerical simulation study
R Pandey, A Singla, J Madan, R Sharma, R Chaujar
Journal of Micromechanics and Microengineering 29 (6), 064001, 2019
272019
Analytical drain current formulation for gate dielectric engineered dual material gate-gate all around-tunneling field effect transistor
J Madan, RS Gupta, R Chaujar
Japanese Journal of Applied Physics 54 (9), 094202, 2015
272015
Device simulations: Toward the design of> 13% efficient PbS colloidal quantum dot solar cell
R Pandey, A Khanna, K Singh, SK Patel, H Singh, J Madan
Solar Energy 207, 893-902, 2020
232020
Source/gate material-engineered double gate TFET for improved RF and linearity performance: a numerical simulation
S Shekhar, J Madan, R Chaujar
Applied Physics A 124 (11), 1-10, 2018
222018
Palladium gate all around-Hetero dielectric-tunnel FET based highly sensitive hydrogen gas sensor
J Madan, R Chaujar
Superlattices and Microstructures 100, 401-408, 2016
202016
Numerical analysis of Mg2Si/Si heterojunction DG-TFET for low power/high performance applications: Impact of non-idealities
J Madan, M Dassi, R Pandey, R Chaujar, R Sharma
Superlattices and Microstructures 139, 106397, 2020
182020
Design and Simulation of a‐Si: H/PbS Colloidal Quantum Dots Monolithic Tandem Solar Cell for 12% Efficiency
S Kashyap, R Pandey, J Madan, R Sharma
Physica status solidi (a) 217 (20), 2000252, 2020
172020
Numerical simulation of charge transport layer free perovskite solar cell using metal work function shifted contacts
J Madan, S Garg, K Gupta, S Rana, A Manocha, R Pandey
Optik 202, 163646, 2020
172020
MOS based pseudo-resistors exhibiting Tera Ohms of Incremental Resistance for biomedical applications: Analysis and proof of concept
K Sharma, A Pathania, R Pandey, J Madan, R Sharma
Integration 76, 25-39, 2020
162020
Effect of structural and temperature variations on perovskite/Mg 2 Si based monolithic tandem solar cell structure
A Pathania, J Madan, R Pandey, R Sharma
Applied Physics A 126 (7), 1-12, 2020
162020
Impact of metal silicide source electrode on polarity gate induced source in junctionless TFET
J Madan, R Pandey, R Sharma, R Chaujar
Applied Physics A, Springer 125 (9), 600:1-7, 2019
162019
Enhanced Charge Extraction in Metal–Perovskite–Metal Back-Contact Solar Cell Structure Through Electrostatic Doping: A Numerical Study
R Pandey, J Madan, R Sharma
IEEE Transactions on Electron Devices 68 (4), 1757-1763, 2021
142021
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