| Interfacial Charge Analysis of Heterogeneous Gate Dielectric-Gate All Around-Tunnel FET for Improved Device Reliability J Madan, R Chaujar IEEE Transactions on Device and Materials Reliability 16 (2), 227-234, 2016 | 147 | 2016 |
| Device simulation of 17.3% efficient lead-free all-perovskite tandem solar cell J Madan, R Pandey, R Sharma Solar Energy 197, 212-221, 2020 | 76 | 2020 |
| Numerical Simulation of N+ Source Pocket PIN-GAA-Tunnel FET: Impact of Interface Trap Charges and Temperature J Madan, R Chaujar IEEE Transactions on Electron Devices 64 (4), 1482-1488, 2017 | 73 | 2017 |
| Gate drain underlapped-PNIN-GAA-TFET for comprehensively upgraded analog/RF performance J Madan, R Chaujar Superlattices and Microstructures, 2016 | 59 | 2016 |
| Gate drain-overlapped-asymmetric gate dielectric-GAA-TFET: a solution for suppressed ambipolarity and enhanced ON state behavior J Madan, R Chaujar Applied Physics A Materials Science and Processing 122 (11), 973, 2016 | 34 | 2016 |
| Temperature associated reliability issues of heterogeneous gate dielectric-gate all around-tunnel FET J Madan, R Chaujar IEEE Transactions on Nanotechnology, 2017 | 33 | 2017 |
| Mathematical modeling insight of hetero gate dielectric-dual material gate-GAA-tunnel FET for VLSI/analog applications J Madan, RS Gupta, R Chaujar Microsystem Technologies 23 (9), 4091–4098, 2017 | 30 | 2017 |
| Performance investigation of heterogeneous gate dielectric‑gate metal engineered–gate all around‑tunnel FET for RF applications J Madan, RS Gupta, R Chaujar Microsystem Technologies 23 (9), 4081–4090, 2017 | 29 | 2017 |
| Toward the design of monolithic 23.1% efficient hysteresis and moisture free perovskite/c-Si HJ tandem solar cell: a numerical simulation study R Pandey, A Singla, J Madan, R Sharma, R Chaujar Journal of Micromechanics and Microengineering 29 (6), 064001, 2019 | 27 | 2019 |
| Analytical drain current formulation for gate dielectric engineered dual material gate-gate all around-tunneling field effect transistor J Madan, RS Gupta, R Chaujar Japanese Journal of Applied Physics 54 (9), 094202, 2015 | 27 | 2015 |
| Device simulations: Toward the design of> 13% efficient PbS colloidal quantum dot solar cell R Pandey, A Khanna, K Singh, SK Patel, H Singh, J Madan Solar Energy 207, 893-902, 2020 | 23 | 2020 |
| Source/gate material-engineered double gate TFET for improved RF and linearity performance: a numerical simulation S Shekhar, J Madan, R Chaujar Applied Physics A 124 (11), 1-10, 2018 | 22 | 2018 |
| Palladium gate all around-Hetero dielectric-tunnel FET based highly sensitive hydrogen gas sensor J Madan, R Chaujar Superlattices and Microstructures 100, 401-408, 2016 | 20 | 2016 |
| Numerical analysis of Mg2Si/Si heterojunction DG-TFET for low power/high performance applications: Impact of non-idealities J Madan, M Dassi, R Pandey, R Chaujar, R Sharma Superlattices and Microstructures 139, 106397, 2020 | 18 | 2020 |
| Design and Simulation of a‐Si: H/PbS Colloidal Quantum Dots Monolithic Tandem Solar Cell for 12% Efficiency S Kashyap, R Pandey, J Madan, R Sharma Physica status solidi (a) 217 (20), 2000252, 2020 | 17 | 2020 |
| Numerical simulation of charge transport layer free perovskite solar cell using metal work function shifted contacts J Madan, S Garg, K Gupta, S Rana, A Manocha, R Pandey Optik 202, 163646, 2020 | 17 | 2020 |
| MOS based pseudo-resistors exhibiting Tera Ohms of Incremental Resistance for biomedical applications: Analysis and proof of concept K Sharma, A Pathania, R Pandey, J Madan, R Sharma Integration 76, 25-39, 2020 | 16 | 2020 |
| Effect of structural and temperature variations on perovskite/Mg 2 Si based monolithic tandem solar cell structure A Pathania, J Madan, R Pandey, R Sharma Applied Physics A 126 (7), 1-12, 2020 | 16 | 2020 |
| Impact of metal silicide source electrode on polarity gate induced source in junctionless TFET J Madan, R Pandey, R Sharma, R Chaujar Applied Physics A, Springer 125 (9), 600:1-7, 2019 | 16 | 2019 |
| Enhanced Charge Extraction in Metal–Perovskite–Metal Back-Contact Solar Cell Structure Through Electrostatic Doping: A Numerical Study R Pandey, J Madan, R Sharma IEEE Transactions on Electron Devices 68 (4), 1757-1763, 2021 | 14 | 2021 |
Dr. Rahul PandeyChitkara University, PunjabVerified email at chitkara.edu.in
