Dr. V K DIXIT

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	All	Since 2019
Citations	1576	583
h-index	19	11
i10-index	38	13

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200220032004200520062007200820092010201120122013201420152016201720182019202020212022202320247 8 13 9 19 27 37 31 45 24 70 82 109 102 145 114 138 117 128 113 96 89 40

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Tarun Kumar SharmaProfessor, HBNI Mumbai & Head, Materials Science Section, RRCAT-Indore, IndiaVerified email at rrcat.gov.in
Dr. Shailesh Khamariscientific officerVerified email at rrcat.gov.in
Dr. Shreyashkar Dev SinghRAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY, INDORE, INDIA & Homi Bhabha National Institute, MumbaiVerified email at rrcat.gov.in
Geetanjali VashishtScientific OfficerVerified email at rrcat.gov.in
Subhomoy HaldarPostdoc researcher at Lund University, Sweden (Prior: Ph.D. at HBNI, RRCAT, India)Verified email at ftf.lth.se
Brij Mohan AroraVisiting Professor , Indian Institute of Technology BombayVerified email at ee.iitb.ac.in

Dr. V K DIXIT

Professor (Associate) at Homi Bhabha National Institute & Scientist (SO/G) at RRCAT

Verified email at rrcat.gov.in

Raja Ramanna Center for Advanced Technology Semiconductor Laser Section Indore-452 013 (M.P)India


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Springer handbook of crystal growth (A book chapter on Growth and Characterization of Antimony-Based Narrow-Bandgap III–V Semiconductor....... by V K Dixit and H. L. Bhat) G Dhanaraj, K Byrappa, V Prasad, M Dudley Springer, 2010	534	2010
Transparent p-AgCoO2/n-ZnO diode heterojunction fabricated by pulsed laser deposition RS Ajimsha, KA Vanaja, MK Jayaraj, P Misra, VK Dixit, LM Kukreja Thin Solid Films 515 (18), 7352-7356, 2007	74	2007
Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si VK Dixit, T Ganguli, TK Sharma, SD Singh, R Kumar, S Porwal, P Tiwari, ... Journal of Crystal Growth 310 (15), 3428-3435, 2008	58	2008
A versatile phenomenological model for the S-shaped temperature dependence of photoluminescence energy for an accurate determination of the exciton localization energy in bulk … VK Dixit, S Porwal, SD Singh, TK Sharma, S Ghosh, SM Oak Journal of Physics D: Applied Physics 47 (6), 065103, 2014	57	2014
Crystal growth and characterization of a new nonlinear optical material: Urea l-Malic Acid VK Dixit, S Vanishri, HL Bhat, E de Matos Gomes, M Belsley, C Santinha, ... Journal of crystal growth 253 (1-4), 460-466, 2003	51	2003
Structural and electronic properties of a Mn oxide diffusion barrier layer formed by chemical vapor deposition VK Dixit, K Neishi, N Akao, J Koike IEEE Transactions on Device and Materials Reliability 11 (2), 295-302, 2011	42	2011
Studies on MOVPE growth of GaP epitaxial layer on Si (0 0 1) substrate and effects of annealing VK Dixit, T Ganguli, TK Sharma, R Kumar, S Porwal, V Shukla, A Ingale, ... Journal of crystal growth 293 (1), 5-13, 2006	40	2006
Growth of InSb epitaxial layers on GaAs (0 0 1) substrates by LPE and their characterizations VK Dixit, BV Rodrigues, HL Bhat, R Venkataraghavan, ... Journal of crystal growth 235 (1-4), 154-160, 2002	31	2002
Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in Al_xGa_1−xAs/GaAs quantum wells by magneto-photoluminescence S Haldar, VK Dixit, G Vashisht, SK Khamari, S Porwal, TK Sharma, ... Scientific Reports 7 (1), 4905, 2017	29	2017
Observation of electron confinement in InP/GaAs type-II ultrathin quantum wells SD Singh, VK Dixit, S Porwal, R Kumar, AK Srivastava, T Ganguli, ... Applied Physics Letters 97 (11), 2010	28	2010
Effect of 60Co γ-ray irradiation on electrical properties of GaAs epilayer and GaAs p–i–n diode SK Khamari, VK Dixit, T Ganguli, S Porwal, SD Singh, S Kher, RK Sharma, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2011	27	2011
Alloying induced degradation of the absorption edge of InAsxSb1− x B Bansal, VK Dixit, V Venkataraman, HL Bhat Applied Physics Letters 90 (10), 2007	27	2007
High-mobility InSb epitaxial films grown on a GaAs (001) substrate using liquid-phase epitaxy VK Dixit, B Bansal, V Venkataraman, HL Bhat, GN Subbanna, ... Applied physics letters 80 (12), 2102-2104, 2002	27	2002
Dislocation-assisted tunnelling of charge carriers across the Schottky barrier on the hydride vapour phase epitaxy grown GaN A Chatterjee, SK Khamari, VK Dixit, SM Oak, TK Sharma Journal of Applied Physics 118 (17), 2015	25	2015
Studies on high resolution x-ray diffraction, optical and transport properties of InAsxSb1− x∕ GaAs (x⩽ 0.06) heterostructure grown using liquid phase epitaxy VK Dixit, B Bansal, V Venkataraman, HL Bhat, KS Chandrasekharan, ... Journal of applied physics 96 (9), 4989-4997, 2004	24	2004
Effect of high dose γ-ray irradiation on GaAs pin photodetectors VK Dixit, SK Khamari, S Manwani, S Porwal, K Alexander, TK Sharma, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2015	23	2015
Structural, optical, and electrical properties of bulk single crystals of grown by rotatory Bridgman method VK Dixit, B Bansal, V Venkataraman, HL Bhat, GN Subbanna Applied physics letters 81 (9), 1630-1632, 2002	23	2002
Role of surface energy on the morphology and optical properties of GaP micro & nano structures grown on polar and non-polar substrates R Roychowdhury, S Kumar, A Wadikar, C Mukherjee, K Rajiv, TK Sharma, ... Applied Surface Science 419, 957-967, 2017	20	2017
Temperature dependence of the energy gap and free carrier absorption in bulk single crystals B Bansal, VK Dixit, V Venkataraman, HL Bhat Applied physics letters 82 (26), 4720-4722, 2003	20	2003
Investigation of crystalline and electronic band alignment properties of GaP/Ge (111) heterostructure VK Dixit, S Kumar, SD Singh, SK Khamari, R Kumar, P Tiwari, DM Phase, ... Applied Physics Letters 104 (9), 2014	19	2014

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