D J Wallis
D J Wallis
Universities of Cardiff & Cambridge
Verified email at cam.ac.uk
Cited by
Cited by
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
Prospects of III-nitride optoelectronics grown on Si
D Zhu, DJ Wallis, CJ Humphreys
Reports on Progress in Physics 76 (10), 106501, 2013
Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices
A Sarua, H Ji, KP Hilton, DJ Wallis, MJ Uren, T Martin, M Kuball
IEEE Transactions on electron devices 54 (12), 3152-3158, 2007
Dissolution of different forms of partially porous silicon wafers under simulated physiological conditions
SHC Anderson, H Elliott, DJ Wallis, LT Canham, JJ Powell
physica status solidi (a) 197 (2), 331-335, 2003
Medium-range order in silica, the canonical network glass
PH Gaskell, DJ Wallis
Physical review letters 76 (1), 66, 1996
85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications
S Datta, T Ashley, J Brask, L Buckle, M Doczy, M Emeny, D Hayes, ...
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International …, 2005
Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications
T Ashley, L Buckle, S Datta, MT Emeny, DG Hayes, KP Hilton, R Jefferies, ...
Electronics Letters 43 (14), 777-779, 2007
Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy
M Kuball, GJ Riedel, JW Pomeroy, A Sarua, MJ Uren, T Martin, KP Hilton, ...
IEEE Electron Device Letters 28 (2), 86-89, 2007
High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC= 0.5 V) logic applications
M Radosavljevic, T Ashley, A Andreev, SD Coomber, G Dewey, ...
Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-4, 2008
EELS in the STEM: Determination of materials properties on the atomic scale
ND Browning, DJ Wallis, PD Nellist, SJ Pennycook
Micron 28 (5), 333-348, 1997
An Organic Down‐Converting Material for White‐Light Emission from Hybrid LEDs
NJ Findlay, J Bruckbauer, AR Inigo, B Breig, S Arumugam, DJ Wallis, ...
Advanced Materials 26 (43), 7290-7294, 2014
A novel route to aligned nanotubes and nanofibres using laser-patterned catalytic substrates
N Grobert, M Terrones, S Trasobares, K Kordatos, H Terrones, J Olivares, ...
Applied Physics A: Materials Science & Processing 70 (2), 175-183, 2000
Analysis of DC–RF dispersion in AlGaN/GaN HFETs using RF waveform engineering
C Roff, J Benedikt, PJ Tasker, DJ Wallis, KP Hilton, JO Maclean, ...
IEEE Transactions on Electron Devices 56 (1), 13-19, 2008
Reducing thermal resistance of AlGaN/GaN electronic devices using novel nucleation layers
GJ Riedel, JW Pomeroy, KP Hilton, JO Maclean, DJ Wallis, MJ Uren, ...
IEEE Electron Device Letters 30 (2), 103-106, 2008
GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE
D Zhu, C McAleese, KK McLaughlin, M Häberlen, CO Salcianu, EJ Thrush, ...
SPIE OPTO: Integrated Optoelectronic Devices, 723118-723118-11, 2009
Nanosecond timescale thermal dynamics of AlGaN/GaN electronic devices
GJ Riedel, JW Pomeroy, KP Hilton, JO Maclean, DJ Wallis, MJ Uren, ...
IEEE Electron Device Letters 29 (5), 416-418, 2008
Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates
D Zhu, C McAleese, M Häberlen, C Salcianu, T Thrush, M Kappers, ...
Journal of applied physics 109 (1), 014502, 2011
Thermal mapping of defects in AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
JW Pomeroy, M Kuball, DJ Wallis, AM Keir, KP Hilton, RS Balmer, ...
Applied Physics Letters 87 (10), 103508-103508-3, 2005
Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing
AJ Trindade, B Guilhabert, EY Xie, R Ferreira, JJD McKendry, D Zhu, ...
Optics Express 23 (7), 9329-9338, 2015
Structural and electrical characterization of AuPdAlTi ohmic contacts to with varying Ti content
MW Fay, G Moldovan, NJ Weston, PD Brown, I Harrison, KP Hilton, ...
Journal of applied physics 96 (10), 5588-5595, 2004
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