| Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm KH Hamza, D Nirmal, ASA Fletcher, L Arivazhagan, J Ajayan, R Natarajan AEU-International Journal of Electronics and Communications 136, 153774, 2021 | 20 | 2021 |
| Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier KH Hamza, D Nirmal, ASA Fletcher, J Ajayan, R Natarajan Materials Science and Engineering: B 284, 115863, 2022 | 10 | 2022 |
| Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility … P Murugapandiyan, D Nirmal, J Ajayan, A Varghese, N Ramkumar Silicon, 1-9, 2022 | 10 | 2022 |
| Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study P Murugapandiyan, D Nirmal, MT Hasan, A Varghese, J Ajayan, ... Materials Science and Engineering: B 273, 115449, 2021 | 10 | 2021 |
| Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs P Murugapandiyan, MT Hasan, V Rajya Lakshmi, M Wasim, J Ajayan, ... International Journal of Electronics 108 (8), 1273-1287, 2021 | 10 | 2021 |
| Controlling the boiler temperature of tea leaves by using android application and arduino UNO S Boopathy, N Ramkumar Proceedings of International Journal of Modern Computer Science (IJMCS), 57-6, 2016 | 10 | 2016 |
| UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications S Baskaran, M Shunmugathammal, C Sivamani, S Ravi, ... Silicon 14 (17), 11079-11087, 2022 | 8 | 2022 |
| Influence of High-k Passivation Layer on Gate Field Plate AlGaN/GaN/AlGaN Double Heterojunction HEMT R Natarajan, E Parthasarathy, P Murugapandiyan Silicon 14 (16), 10437-10445, 2022 | 8 | 2022 |
| GaN-based high electron mobility transistors for high power and high frequency application: A Review MW P. Murugapandiyan,V. Rajya Lakshmi,N. Ramkumar,P. Eswaran Innovations in Electronics and Communication Engineering 7, 9, 2020 | 8* | 2020 |
| Implementation of automatic fertigation system by measuring the plant parameters S Boopathy, N Ramkumar, P Premkumar, P Govindaraju Int J Eng Res Technol 3 (10), 2014 | 8 | 2014 |
| Enhancement of Blocking Voltage in GaN HEMT Using Stacked Passivation Layer R Natarajan Silicon 14 (14), 8487-8492, 2022 | 5 | 2022 |
| A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations PMRN A. S. Augustine Fletcher, D. Nirmal, L. Arivazhagan, J. Ajayan, Merlin ... Journal of Electronic Materials, 2022 | 4* | 2022 |
| Analysis of Berger code based fault tolerant techniques for embedded system N Ramkumar, S Boopathy International Journal of Modern Computer Science (IJMCS) 2 (6), 50-55, 2014 | 4 | 2014 |
| Breakdown Voltage Enhancement of Al0.1Ga0.9 N Channel HEMT with Recessed Floating Field Plate R Natarajan, E Parthasarathy Silicon 14 (11), 5961-5973, 2022 | 3 | 2022 |
| Design and analysis of normally-off GaN-HEMT using β-Ga2O3 buffer for low-loss power converter applications A Revathy, JV Kumar, P Murugapandiyan, M Wasim, KN Devi, ... Micro and Nanostructures 182, 207643, 2023 | 2 | 2023 |
| Ultra‐wide bandgap Al0.1Ga0.9N double channel HEMT for RF applications R Natarajan, E Parthasarathy, P Murugapandiyan International Journal of RF and Microwave Computer‐Aided Engineering 32 (11 …, 2022 | 2 | 2022 |
| In AlN/GaN High Electron Mobility Transistor with In GaN Back barrier for Future High Frequency Applications N Ramkumar, E Parthasarathy Elementary Education Online 20 (1), 2186-2193, 2021 | 1 | 2021 |
| Investigation of different buffer layer impact on AlN/GaN/AlGaN HEMT using silicon carbide substrate for high-speed RF applications R Natarajan, P Murugapandiyan, N Vigneshwari, A Mohanbabu, ... Micro and Nanostructures 189, 207815, 2024 | | 2024 |
| Ultrawide Bandgap AlGaN-Channel-Based HEMTs for Next-Generation Electronics P Murugapandiyan, N Ramkumar, S Ravi HEMT Technology and Applications, 1-24, 2022 | | 2022 |
| High-Performance $\operatorname {In} _ {0.13}\text {Al} _ {0.83}\text {Ga} _ {0.04}\mathrm {N}/\text {AlN}/\text {GaN}/\text {In} _ {0.04}\text {Ga} _ {0.96}\mathrm {N} $ HEMT … R Natarajan, E Parthasarathy, P Muragapandiyan 2021 IEEE Madras Section Conference (MASCON), 1-5, 2021 | | 2021 |
Dr.D.NirmalAssociate Dean Engineering and Technology, Karunya UniversityVerified email at karunya.edu
