Dr. Vivek kumar Surana

20182019202020212022202320241 8 18 18 29 15 6

Public access

1 article

0 articles

available

not available

Based on funding mandates

Akanksha RawatDepartment of Electrical Engineering, IIT BombayVerified email at ee.iitb.ac.in
Dr. Navneet BhardwajIndian institute of technology, BombayVerified email at ee.iitb.ac.in
Yogendra Kumar YadavProcess/integration modelling, Applied Materials BangaloreVerified email at iitb.ac.in
Vikas PendemPhD Research Scholar, Department of Electrical Engineering, Indian Institute of Technology BombayVerified email at iitb.ac.in

Dr. Vivek kumar Surana

Senior Device Engineer, Micron Technology, Singapore

Verified email at iitb.ac.in


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Thermally Grown TiO₂and Al₂O₃for GaN-Based MOS-HEMTs A Rawat, M Meer, V kumar Surana, N Bhardwaj, V Pendem, ... IEEE Transactions on Electron Devices 65 (9), 3725-3731, 2018	40	2018
Realization of high quality silicon nitride deposition at low temperatures VK Surana, N Bhardwaj, A Rawat, Y Yadav, S Ganguly, D Saha Journal of Applied Physics 126 (11), 2019	29	2019
Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO₂ as a Dielectric A Rawat, VK Surana, M Meer, N Bhardwaj, S Ganguly, D Saha IEEE Transactions on Electron Devices 66 (6), 2557-2562, 2019	22	2019
Performance Improvement in AlGaN/GaN High‐Electron‐Mobility Transistors by Low‐Temperature Inductively Coupled Plasma–Chemical Vapor Deposited SiN x as Gate Dielectric and … VK Surana, S Ganguly, D Saha physica status solidi (a) 219 (24), 2200509, 2022	3	2022
Tensile strain and Fermi level alignment in thermally grown TiO2 and Al2O3 based AlGaN/GaN MOS-HEMTs A Rawat, VK Surana, S Ganguly, D Saha Solid-State Electronics 164, 107702, 2020	2	2020

The system can't perform the operation now. Try again later.

Articles 1–5

Citations per year