| Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects AH Bayani, D Dideban, M Vali, N Moezi Semiconductor Science and Technology 31 (4), 045009, 2016 | 15 | 2016 |
| Hydrogen sensitive field-effect transistor based on germanene nanoribbon and optical properties of hydrogenated germanene AH Bayani, D Dideban, N Moezi Journal of Computational Electronics 15 (2), 381-388, 2016 | 10 | 2016 |
| Investigation of sub-10nm cylindrical surrounding gate germanium nanowire field effect transistor with different cross-section areas AH Bayani, D Dideban, J Voves, N Moezi Superlattices and Microstructures 105, 110-116, 2017 | 8 | 2017 |
| Impact of uniaxial compressive strain on physical and electronic parameters of a 10 nm germanene nanoribbon field effect transistor AH Bayani, D Dideban, N Moezi Superlattices and Microstructures 100, 198-208, 2016 | 7 | 2016 |
| The study of the effect of increasing adsorbed hydrogen's atomic percentage on electronic properties of boron-nitride nanotube AH Bayani, N Shahtahmassebi, DV Fakhrabad Physica E: Low-dimensional Systems and Nanostructures 53, 168-172, 2013 | 7 | 2013 |
| The effect of concentration of H2 physisorption on the current–voltage characteristic of armchair BN nanotubes in CNT–BNNT–CNT set R Azimirad, AH Bayani, S Safa Pramana 87 (4), 46, 2016 | 6 | 2016 |
| Theoretical logic performance estimation of Silicon, Germanium and SiGe nanowire Fin-Field Effect Transistor MS Mobarakeh, S Omrani, M Vali, A Bayani, N Omrani Superlattices and Microstructures 120, 578-587, 2018 | 5 | 2018 |
| Tuning the analog and digital performance of Germanene nanoribbon field effect transistors with engineering the width and geometry of source, channel and drain region in the … D Dideban, A Ketabi, M Vali, AH Bayani, H Heidari Materials Science in Semiconductor Processing 80, 18-23, 2018 | 4 | 2018 |
| Effective mass approximation versus full atomistic model to calculate the output characteristics of a gate-all-around germanium nanowire field effect transistor (GAA-GeNW-FET) AH Bayani, J Voves, D Dideban Superlattices and Microstructures 113, 769-776, 2018 | 4 | 2018 |
| Benchmarking performance of a gate-all-around germanium nanotube field effect transistor (GAA-GeNTFET) against GAA-CNTFET AH Bayani, D Dideban, M Akbarzadeh, N Moezi ECS Journal of Solid State Science and Technology 6 (4), M24-M28, 2017 | 4 | 2017 |
| CO gas opto‐electronic sensor using semiconductor graphene nanoribbons: A first‐principles study R Azimirad, S Safa, AH Bayani physica status solidi (b) 253 (3), 559-565, 2016 | 2 | 2016 |
| Simulation Investigation of Siligene Nanoribbon as a Novel Gas Sensor with Strain Engineering: Sensitivity and Selectivity of Current-Voltage Characteristic AJAH Bayani ECS Journal of Solid State Science and Technology 6 (7), 83-87, 2017 | 1 | 2017 |
| Simulation of Filed Effect Sensor Based on Graphene Nanoribbon to Detect Toxic NO Gas A Jodat, AH Bayani Silicon, 1-5, 2018 | | 2018 |
Daryoosh DidebanAssociate professor of electronics and electrical engineering, University of KashanVerified email at kashanu.ac.ir