| 2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure S Kumar, E Goel, K Singh, B Singh, PK Singh, K Baral, S Jit IEEE Transactions on Electron Devices 64 (3), 960-968, 2017 | 167 | 2017 |
| A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO2/High-Stacked Gate-Oxide Structure S Kumar, E Goel, K Singh, B Singh, M Kumar, S Jit IEEE Transactions on Electron Devices 63 (8), 3291-3299, 2016 | 142 | 2016 |
| 2-D analytical modeling of threshold voltage for graded-channel dual-material double-gate MOSFETs E Goel, S Kumar, K Singh, B Singh, M Kumar, S Jit IEEE Transactions on Electron Devices 63 (3), 966-973, 2016 | 108 | 2016 |
| Analytical modeling of channel potential and threshold voltage of double-gate junctionless FETs with a vertical Gaussian-like doping profile B Singh, D Gola, K Singh, E Goel, S Kumar, S Jit IEEE Transactions on Electron Devices 63 (6), 2299-2305, 2016 | 74 | 2016 |
| 2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure S Kumar, K Singh, S Chander, E Goel, PK Singh, K Baral, B Singh, S Jit IEEE Transactions on Electron Devices 65 (1), 331-338, 2017 | 69 | 2017 |
| Dielectric pocket double gate junctionless FET: a new MOS structure with improved subthreshold characteristics for low power VLSI applications B Singh, D Gola, E Goel, S Kumar, K Singh, S Jit Journal of Computational Electronics 15 (2), 502-507, 2016 | 39 | 2016 |
| 2-D analytical threshold voltage model for dielectric pocket double-gate junctionless FETs by considering source/drain depletion effect B Singh, D Gola, K Singh, E Goel, S Kumar, S Jit IEEE Transactions on Electron Devices 64 (3), 901-908, 2017 | 38 | 2017 |
| Analytical modeling of subthreshold characteristics of ion-implanted symmetric double gate junctionless field effect transistors B Singh, D Gola, K Singh, E Goel, S Kumar, S Jit Materials science in semiconductor processing 58, 82-88, 2017 | 26 | 2017 |
| Ferro-electric stacked gate oxide heterojunction electro-statically doped source/drain double-gate tunnel field effect transistors: A superior structure B Singh, TN Rai, D Gola, K Singh, E Goel, S Kumar, PK Tiwari, S Jit Materials Science in Semiconductor Processing 71, 161-165, 2017 | 19 | 2017 |
| Analytical modeling of subthreshold current and subthreshold swing of Gaussian-doped strained-Si-on-insulator MOSFETs G Rawat, S Kumar, E Goel, M Kumar, S Dubey, S Jit Journal of Semiconductors 35 (8), 084001, 2014 | 18 | 2014 |
| A compact 2-D analytical model for electrical characteristics of double-gate Tunnel-FETs with a SiO2/High-k stacked gate-oxide structure S Kumar, E Goel, K Singh, B Singh, M Kumar, S Jit IEEE Trans. Electron Devices 60, 3291-3299, 2016 | 14 | 2016 |
| Bandgap graded perovskite solar cell for above 30% efficiency JL Prasanna, E Goel, A Kumar, A Laref, C Santhosh, P Ranjan, A Kumar Optik 269, 169891, 2022 | 13 | 2022 |
| Two-dimensional model for subthreshold current and subthreshold swing of graded-channel dual-material double-gate (GCDMDG) MOSFETs E Goel, S Kumar, B Singh, K Singh, S Jit Superlattices and Microstructures 106, 147-155, 2017 | 13 | 2017 |
| Analytical threshold voltage modeling of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs E Goel, B Singh, S Kumar, K Singh, S Jit Indian Journal of Physics 91, 383-390, 2017 | 12 | 2017 |
| Evolution of tunnel field effect transistor for low power and high speed applications: a review KMC Babu, E Goel Silicon 14 (17), 11051-11060, 2022 | 11 | 2022 |
| Analytical modeling of potential distribution and threshold voltage of gate underlap DG MOSFETs with a source/drain lateral Gaussian doping profile K Singh, M Kumar, E Goel, B Singh, S Dubey, S Kumar, S Jit Journal of Electronic Materials 45, 2184-2192, 2016 | 9 | 2016 |
| Review of nanomaterials impact on improving the performance of dye-sensitized and perovskite solar cells JL Prasanna, E Goel, A Kumar, A Kumar Optical and Quantum Electronics 54 (11), 748, 2022 | 8 | 2022 |
| Strain-induced plasma radiation in Terahertz domain in Strained-Si-on-Insulator MOSFETs M Kumar, S Kumar, E Goel, K Singh, B Singh, S Jit IEEE Transactions on Plasma Science 44 (3), 245-249, 2016 | 7 | 2016 |
| Analytical modeling of threshold voltage of ion-implanted Strained-Si-on-Insulator (SSOI) MOSFETs G Rawat, E Goel, S Kumar, M Kumar, S Dubey, S Jit Journal of Nanoelectronics and Optoelectronics 9 (3), 442-448, 2014 | 7 | 2014 |
| Numerical investigation of MAPbI3 perovskite solar cells for performance limiting parameters JL Prasanna, E Goel, A Kumar Optical and Quantum Electronics 55 (7), 610, 2023 | 6 | 2023 |
Satyabrata JitIndian Institute of Technology (Banaras Hindu University) Varanasi, IndiaVerified email at iitbhu.ac.in
