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Geok Ing Ng
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Flexible ionic‐electronic hybrid oxide synaptic TFTs with programmable dynamic plasticity for brain‐inspired neuromorphic computing
RA John, J Ko, MR Kulkarni, N Tiwari, NA Chien, NG Ing, WL Leong, ...
Small 13 (32), 1701193, 2017
1662017
Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation
ZH Liu, GI Ng, H Zhou, S Arulkumaran, YKT Maung
Applied Physics Letters 98 (11), 2011
1392011
Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3…
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
Applied Physics Letters 95 (22), 2009
1362009
AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si (111)
S Tripathy, VKX Lin, SB Dolmanan, JPY Tan, RS Kajen, LK Bera, SL Teo, ...
Applied Physics Letters 101 (8), 2012
1232012
Reactive sputter deposition and characterization of tantalum nitride thin films
K Radhakrishnan, NG Ing, R Gopalakrishnan
Materials Science and Engineering: B 57 (3), 224-227, 1999
1111999
Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, H Zhou
Applied Physics Letters 98 (16), 2011
992011
Gallium Nitride Transistors on Large-Diameter Si(111) Substrate
S Arulkumaran, GI Ng
Gallium Nitride (GaN): Physics, Devices, and Technology, 63-107, 2015
98*2015
0.10 μm graded InGaAs channel InP HEMT with 305 GHz fTand 340 GHz fmax
M Wojtowicz, R Lai, DC Streit, GI Ng, TR Block, KL Tan, PH Liu, ...
IEEE Electron Device Letters 15 (11), 477-479, 1994
931994
Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
G Ye, H Wang, S Arulkumaran, GI Ng, R Hofstetter, Y Li, MJ Anand, ...
Applied Physics Letters 103 (14), 2013
882013
Low‐ and high‐field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation‐doped heterostructures
WP Hong, GI Ng, PK Bhattacharya, D Pavlidis, S Willing, B Das
Journal of Applied Physics 64 (4), 1945-1949, 1988
871988
InAlN/GaN HEMTs on Si With High of 250 GHz
W Xing, Z Liu, H Qiu, K Ranjan, Y Gao, GI Ng, T Palacios
IEEE Electron Device Letters 39 (1), 75-78, 2017
862017
High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With Gate Insulator Grown by ALD
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
IEEE electron device letters 31 (2), 96-98, 2009
842009
Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si (111) substrate
S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, JPY Tan, VK Lin, ...
Japanese Journal of Applied Physics 51 (11R), 111001, 2012
832012
Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from− 50 to 200 C
ZH Liu, S Arulkumaran, GI Ng
Applied physics letters 94 (14), 2009
792009
Improved Linearity for Low-Noise Applications in 0.25-GaN MISHEMTs Using ALDas Gate Dielectric
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
IEEE Electron Device Letters 31 (8), 803-805, 2010
752010
Improved Power Device Figure-of-Merit (4.0 108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si
S Arulkumaran, S Vicknesh, NG Ing, SL Selvaraj, T Egawa
Applied physics express 4 (8), 084101, 2011
742011
Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal–oxide–semiconductor-compatible non-gold metal stack
S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, CM Kumar, KL Teo, ...
Applied Physics Express 6 (1), 016501, 2012
712012
Low-temperature chemical transformations for high-performance solution-processed oxide transistors
RA John, NA Chien, S Shukla, N Tiwari, C Shi, NG Ing, N Mathews
Chemistry of Materials 28 (22), 8305-8313, 2016
692016
Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate
S Arulkumaran, ZH Liu, GI Ng, WC Cheong, R Zeng, J Bu, H Wang, ...
Thin Solid Films 515 (10), 4517-4521, 2007
682007
Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x> 0.53) HEMTs
GI Ng, D Pavlidis, M Jaffe, J Singh, HF Chau
IEEE transactions on electron devices 36 (10), 2249-2259, 1989
671989
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