Mao-Lin Huang
Mao-Lin Huang
Taiwan Semiconductor Manufacturing Company
Verified email at oz.nthu.edu.tw
Title
Cited by
Cited by
Year
Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al 2 O 3
ML Huang, YC Chang, CH Chang, YJ Lee, P Chang, J Kwo, TB Wu, ...
Applied Physics Letters 87 (25), 252104-252104-3, 2005
4272005
Energy-band parameters of atomic-layer-deposition Al 2 O 3/InGaAs heterostructure
ML Huang, YC Chang, CH Chang, TD Lin, J Kwo, TB Wu, M Hong
Applied physics letters 89 (1), 012903-012903-3, 2006
1992006
Atomic-layer-deposited HfO 2 on In 0.53 Ga 0.47 As: Passivation and energy-band parameters
YC Chang, ML Huang, KY Lee, YJ Lee, TD Lin, M Hong, J Kwo, TS Layl, ...
Applied Physics Letters 92 (7), 072901-072901-3, 2008
1322008
Structural and electrical characteristics of atomic layer deposited high κ HfO 2 on GaN
YC Chang, HC Chiu, YJ Lee, ML Huang, KY Lee, M Hong, YN Chiu, ...
Applied physics letters 90 (23), 232904-232904-3, 2007
1302007
III–V Metal–Oxide–Semiconductor Field-Effect Transistors with High κ Dielectrics
M Hong, JR Kwo, P Tsai, Y Chang, ML Huang, C Chen
Japanese journal of applied physics 46 (5S), 3167, 2007
932007
Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1− xAs
ML Huang, YC Chang, YH Chang, TD Lin, J Kwo, M Hong
Applied Physics Letters 94 (5), 052106-052106-3, 2009
81*2009
Atomic-layer-deposited Al< sub> 2</sub> O< sub> 3</sub> and HfO< sub> 2</sub> on GaN: A comparative study on interfaces and electrical characteristics
YC Chang, ML Huang, YH Chang, YJ Lee, HC Chiu, J Kwo, M Hong
Microelectronic Engineering 88 (7), 1207-1210, 2011
72*2011
Nanometer‐Thick Single‐Crystal Hexagonal Gd2O3 on GaN for Advanced Complementary Metal‐Oxide‐Semiconductor Technology
WH Chang, CH Lee, YC Chang, P Chang, ML Huang, YJ Lee, CH Hsu, ...
Advanced Materials 21 (48), 4970-4974, 2009
672009
Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO 2 on In 0.53 Ga 0.47 As
KY Lee, YJ Lee, P Chang, ML Huang, YC Chang, M Hong, J Kwo
Applied Physics Letters 92 (25), 252908-252908-3, 2008
552008
Realization of high-quality HfO2 on In0. 53Ga0. 47As by in-situ atomic-layer-deposition
TD Lin, YH Chang, CA Lin, ML Huang, WC Lee, J Kwo, M Hong
Applied Physics Letters 100 (17), 172110, 2012
532012
Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant
ZK Yang, WC Lee, YJ Lee, P Chang, ML Huang, M Hong, CH Hsu, J Kwo
Applied physics letters 90 (15), 152908, 2007
532007
Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y< sub> 2</sub> O< sub> 3</sub> on Ge
LK Chu, WC Lee, ML Huang, YH Chang, LT Tung, CC Chang, YJ Lee, ...
Journal of Crystal Growth 311 (7), 2195-2198, 2009
462009
InGaAs Metal Oxide Semiconductor Devices with Ga2O3 (Gd2O3) High-κ Dielectrics for Science and Technology beyond Si CMOS
M Hong, J Kwo, TD Lin, ML Huang
MRS bulletin 34 (07), 514-521, 2009
392009
Lithography with a focused soft X-ray beam and a monomolecular resist
R Klauser, ML Huang, SC Wang, CH Chen, TJ Chuang, A Terfort, ...
Langmuir 20 (6), 2050-2053, 2004
352004
Ga 2 O 3 (Gd 2 O 3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices
LK Chu, TD Lin, ML Huang, RL Chu, CC Chang, J Kwo, M Hong
Applied Physics Letters 94 (20), 202108-202108-3, 2009
322009
Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal–Oxide–Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics
P Chang, HC Chiu, TD Lin, ML Huang, WH Chang, SY Wu, KH Wu, ...
Applied Physics Express 4 (11), 114202, 2011
312011
Electrical properties and interfacial chemical environments of< i> in situ</i> atomic layer deposited Al< sub> 2</sub> O< sub> 3</sub> on freshly molecular beam epitaxy grown GaAs
YH Chang, ML Huang, P Chang, CA Lin, YJ Chu, BR Chen, CL Hsu, ...
Microelectronic Engineering 88 (4), 440-443, 2011
30*2011
In0.53Ga0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate
ML Huang, SW Chang, MK Chen, CH Fan, HT Lin, CH Lin, RL Chu, ...
2015 Symposia on VLSI Technology and Circuits 2015 (Digest of Technical …, 2015
292015
Effective passivation of In0. 2Ga0. 8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition
YH Chang, CA Lin, YT Liu, TH Chiang, HY Lin, ML Huang, TD Lin, TW Pi, ...
Applied Physics Letters 101 (17), 172104, 2012
292012
High performance In0.53Ga0.47As FinFETs fabricated on 300 mm Si substrate
ML Huang, SW Chang, MK Chen, Y Oniki, HC Chen, CH Lin, WC Lee, ...
VLSI Technology, 2016 IEEE Symposium on, 1-2, 2016
252016
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