| Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al 2 O 3 ML Huang, YC Chang, CH Chang, YJ Lee, P Chang, J Kwo, TB Wu, ... Applied Physics Letters 87 (25), 252104-252104-3, 2005 | 463 | 2005 |
| Energy-band parameters of atomic-layer-deposition Al 2 O 3/InGaAs heterostructure ML Huang, YC Chang, CH Chang, TD Lin, J Kwo, TB Wu, M Hong Applied physics letters 89 (1), 012903-012903-3, 2006 | 233 | 2006 |
| Structural and electrical characteristics of atomic layer deposited high κ HfO 2 on GaN YC Chang, HC Chiu, YJ Lee, ML Huang, KY Lee, M Hong, YN Chiu, ... Applied physics letters 90 (23), 232904-232904-3, 2007 | 146 | 2007 |
| Atomic-layer-deposited HfO 2 on In 0.53 Ga 0.47 As: Passivation and energy-band parameters YC Chang, ML Huang, KY Lee, YJ Lee, TD Lin, M Hong, J Kwo, TS Layl, ... Applied Physics Letters 92 (7), 072901-072901-3, 2008 | 139 | 2008 |
| III–V Metal–Oxide–Semiconductor Field-Effect Transistors with High κ Dielectrics M Hong, JR Kwo, P Tsai, Y Chang, ML Huang, C Chen Japanese journal of applied physics 46 (5S), 3167, 2007 | 94 | 2007 |
| Atomic-layer-deposited Al< sub> 2</sub> O< sub> 3</sub> and HfO< sub> 2</sub> on GaN: A comparative study on interfaces and electrical characteristics YC Chang, ML Huang, YH Chang, YJ Lee, HC Chiu, J Kwo, M Hong Microelectronic Engineering 88 (7), 1207-1210, 2011 | 90* | 2011 |
| Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1− xAs ML Huang, YC Chang, YH Chang, TD Lin, J Kwo, M Hong Applied Physics Letters 94 (5), 052106-052106-3, 2009 | 90 | 2009 |
| Nanometer‐Thick Single‐Crystal Hexagonal Gd2O3 on GaN for Advanced Complementary Metal‐Oxide‐Semiconductor Technology WH Chang, CH Lee, YC Chang, P Chang, ML Huang, YJ Lee, CH Hsu, ... Advanced Materials 21 (48), 4970-4974, 2009 | 72 | 2009 |
| Realization of high-quality HfO2 on In0. 53Ga0. 47As by in-situ atomic-layer-deposition TD Lin, YH Chang, CA Lin, ML Huang, WC Lee, J Kwo, M Hong Applied Physics Letters 100 (17), 172110, 2012 | 65 | 2012 |
| Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO 2 on In 0.53 Ga 0.47 As KY Lee, YJ Lee, P Chang, ML Huang, YC Chang, M Hong, J Kwo Applied Physics Letters 92 (25), 252908-252908-3, 2008 | 58 | 2008 |
| Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant ZK Yang, WC Lee, YJ Lee, P Chang, ML Huang, M Hong, CH Hsu, J Kwo Applied physics letters 90 (15), 152908, 2007 | 57 | 2007 |
| Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y< sub> 2</sub> O< sub> 3</sub> on Ge LK Chu, WC Lee, ML Huang, YH Chang, LT Tung, CC Chang, YJ Lee, ... Journal of Crystal Growth 311 (7), 2195-2198, 2009 | 47 | 2009 |
| InGaAs Metal Oxide Semiconductor Devices with Ga2O3 (Gd2O3) High-κ Dielectrics for Science and Technology beyond Si CMOS M Hong, J Kwo, TD Lin, ML Huang MRS bulletin 34 (07), 514-521, 2009 | 40 | 2009 |
| Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal–Oxide–Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics P Chang, HC Chiu, TD Lin, ML Huang, WH Chang, SY Wu, KH Wu, ... Applied Physics Express 4 (11), 114202, 2011 | 37 | 2011 |
| Lithography with a focused soft X-ray beam and a monomolecular resist R Klauser, ML Huang, SC Wang, CH Chen, TJ Chuang, A Terfort, ... Langmuir 20 (6), 2050-2053, 2004 | 37 | 2004 |
| Spectromicroscopic evidence for epitaxial poly-Si thin film formed on amorphous Si substrate by nickel induced lateral crystallization IH Hong, TC Hsu, SC Yen, FS Lin, ML Huang, CH Chen Applied physics letters 89 (18), 182116, 2006 | 36 | 2006 |
| Ga 2 O 3 (Gd 2 O 3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices LK Chu, TD Lin, ML Huang, RL Chu, CC Chang, J Kwo, M Hong Applied Physics Letters 94 (20), 202108-202108-3, 2009 | 35 | 2009 |
| Effective passivation of In0. 2Ga0. 8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition YH Chang, CA Lin, YT Liu, TH Chiang, HY Lin, ML Huang, TD Lin, TW Pi, ... Applied Physics Letters 101 (17), 172104, 2012 | 34 | 2012 |
| In0.53Ga0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate ML Huang, SW Chang, MK Chen, CH Fan, HT Lin, CH Lin, RL Chu, ... 2015 Symposia on VLSI Technology and Circuits 2015 (Digest of Technical …, 2015 | 33 | 2015 |
| Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high-< i> κ</i> dielectrics on Ge without interfacial layers LK Chu, RL Chu, TD Lin, WC Lee, CA Lin, ML Huang, YJ Lee, J Kwo, ... Solid-State Electronics 54 (9), 965-971, 2010 | 33 | 2010 |
