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Naveen kaushik
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Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation
A Nipane, D Karmakar, N Kaushik, S Karande, S Lodha
ACS nano 10 (2), 2128-2137, 2016
3642016
Schottky barrier heights for Au and Pd contacts to MoS2
N Kaushik, A Nipane, F Basheer, S Dubey, S Grover, MM Deshmukh, ...
Applied Physics Letters 105 (11), 2014
2682014
Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2
N Kaushik, D Karmakar, A Nipane, S Karande, S Lodha
ACS applied materials & interfaces 8 (1), 256-263, 2016
1392016
Multilayer ReS2 Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications
K Thakar, B Mukherjee, S Grover, N Kaushik, M Deshmukh, S Lodha
ACS applied materials & interfaces 10 (42), 36512-36522, 2018
932018
Reversible hysteresis inversion in MoS2 field effect transistors
N Kaushik, DMA Mackenzie, K Thakar, N Goyal, B Mukherjee, P Boggild, ...
npj 2D Materials and Applications 1 (1), 34, 2017
922017
Exciton Emission Intensity Modulation of Monolayer MoS2 via Au Plasmon Coupling
B Mukherjee, N Kaushik, RPN Tripathi, AM Joseph, PK Mohapatra, ...
Scientific reports 7 (1), 41175, 2017
592017
Thickness tunable transport in alloyed WSSe field effect transistors
SD Karande, N Kaushik, DS Narang, D Late, S Lodha
Applied Physics Letters 109 (14), 2016
352016
Enhanced stability and performance of few-layer black phosphorus transistors by electron beam irradiation
N Goyal, N Kaushik, H Jawa, S Lodha
Nanoscale 10 (24), 11616-11623, 2018
282018
Low-Frequency Noise in Supported and Suspended MoS2Transistors
N Kaushik, S Ghosh, S Lodha
IEEE Transactions on Electron Devices 65 (10), 4135-4140, 2018
212018
ACS Nano 10, 2128 (2016)
A Nipane, D Karmakar, N Kaushik, S Karande, S Lodha
14
Performance projections for two-dimensional materials in radio-frequency applications
S Singh, K Thakar, N Kaushik, B Muralidharan, S Lodha
Physical Review Applied 10 (1), 014022, 2018
132018
Evaluating Au and Pd contacts in mono and multilayer MoS2 transistors
N Kaushik, A Nipane, F Basheer, S Dubey, S Grover, M Deshmukh, ...
72nd Device Research Conference, 195-196, 2014
122014
P-type doping of MoS2 with phosphorus using a plasma immersion ion implantation (PIII) process
A Nipane, N Kaushik, S Karande, D Karmakar, S Lodha
2015 73rd Annual Device Research Conference (DRC), 191-192, 2015
62015
Suspended ReS2 FET for improved photocurrent-time response
B Mukherjee, K Thakar, N Kaushik, S Lodha
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
42017
Metal Contacts to MoS2
N Kaushik, S Grover, MM Deshmukh, S Lodha
2D Inorganic Materials beyond Graphene, 317-347, 2018
32018
combinatorial effect of d-aminoacids and tetracycline against Pseudomonas aeruginosa biofilm
H Jayalekshmi, C Harikrishnan, S Sali, N Kaushik, N Victus, R Anoop, ...
Int J Pharm Pharmaceut Sci 8, 216-220, 2016
32016
Contact resistance reduction in MoS2 FETs using ultra-thin TiO2 interfacial layers
N Kaushik, A Nipane, S Karande, S Lodha
2015 73rd Annual Device Research Conference (DRC), 211-212, 2015
32015
Methods of forming apparatuses including air gaps between conductive lines and related apparatuses, memory devices, and electronic systems
S Gupta, DR Economy, RJ Hill, KA Ritter, N Kaushik
US Patent 11,456,208, 2022
12022
Microelectronic devices with vertically recessed channel structures and discrete, spaced inter-slit structures, and related methods and systems
H Liu, Y Litao, A Fayrushin, N Kaushik, J Li, C Howder
US Patent App. 17/158,888, 2022
12022
Low power and enhanced noise margins sram using novel asymmetric FinFETs
N Kaushik, D Kaur, BK Kaushik
2012 International Conference on Communication Systems and Network …, 2012
12012
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