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Zhengyang Zhao
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Room-temperature high spin–orbit torque due to quantum confinement in sputtered Bi x Se (1–x) films
M DC, R Grassi, JY Chen, M Jamali, DR Hickey, D Zhang, Z Zhao, H Li, ...
Nature materials 17, 800-808, 2018
4592018
Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques
M Wang, W Cai, D Zhu, Z Wang, J Kan, Z Zhao, K Cao, Z Wang, Y Zhang, ...
Nature electronics 1 (11), 582-588, 2018
3422018
Giant Spin Pumping and Inverse Spin Hall Effect in the Presence of Surface and Bulk Spin−Orbit Coupling of Topological Insulator Bi2Se3
M Jamali, JS Lee, JS Jeong, F Mahfouzi, Y Lv, Z Zhao, BK Nikolic, ...
Nano letters 15 (10), 7126-7132, 2015
3242015
Spin Hall switching of the magnetization in Ta/TbFeCo structures with bulk perpendicular anisotropy
Z Zhao, M Jamali, AK Smith, JP Wang
Applied Physics Letters 106 (13), 2015
1312015
In-memory processing on the spintronic CRAM: From hardware design to application mapping
M Zabihi, ZI Chowdhury, Z Zhao, UR Karpuzcu, JP Wang, SS Sapatnekar
IEEE Transactions on Computers 68 (8), 1159-1173, 2018
1092018
Giant voltage manipulation of MgO-based magnetic tunnel junctions via localized anisotropic strain: A potential pathway to ultra-energy-efficient memory technology
Z Zhao, M Jamali, N D'Souza, D Zhang, S Bandyopadhyay, J Atulasimha, ...
Applied Physics Letters 109 (9), 2016
1062016
External‐field‐free spin Hall switching of perpendicular magnetic nanopillar with a dipole‐coupled composite structure
Z Zhao, AK Smith, M Jamali, JP Wang
Advanced Electronic Materials 6 (5), 1901368, 2020
66*2020
Fast magnetoelectric device based on current-driven domain wall propagation
JP Wang, M Jamali, SS Sapatnekar, MG Mankalale, Z Liang, AK Smith, ...
US Patent 10,217,522, 2019
602019
PIMBALL: Binary neural networks in spintronic memory
S Resch, SK Khatamifard, ZI Chowdhury, M Zabihi, Z Zhao, JP Wang, ...
ACM Transactions on Architecture and Code Optimization (TACO) 16 (4), 1-26, 2019
502019
A comparative study between spin-transfer-torque and spin-Hall-effect switching mechanisms in PMTJ using SPICE
I Ahmed, Z Zhao, MG Mankalale, SS Sapatnekar, JP Wang, CH Kim
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 3 …, 2017
492017
CoMET: Composite-input magnetoelectric-based logic technology
MG Mankalale, Z Liang, Z Zhao, CH Kim, JP Wang, SS Sapatnekar
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 3 …, 2017
452017
Field-free spin-orbit torque switching of composite perpendicular CoFeB/Gd/CoFeB layers utilized for three-terminal magnetic tunnel junctions
JY Chen, M Dc, D Zhang, Z Zhao, M Li, JP Wang
Applied Physics Letters 111 (1), 2017
442017
Using spin-Hall MTJs to build an energy-efficient in-memory computation platform
M Zabihi, Z Zhao, DC Mahendra, ZI Chowdhury, S Resch, T Peterson, ...
20th International Symposium on Quality Electronic Design (ISQED), 52-57, 2019
432019
Room-temperature spin-to-charge conversion in sputtered bismuth selenide thin films via spin pumping from yttrium iron garnet
M Dc, T Liu, JY Chen, T Peterson, P Sahu, H Li, Z Zhao, M Wu, JP Wang
Applied Physics Letters 114 (10), 2019
382019
MOUSE: Inference in non-volatile memory for energy harvesting applications
S Resch, SK Khatamifard, ZI Chowdhury, M Zabihi, Z Zhao, H Cilasun, ...
2020 53rd Annual IEEE/ACM International Symposium on Microarchitecture …, 2020
332020
SkyLogic—A proposal for a skyrmion-based logic device
MG Mankalale, Z Zhao, JP Wang, SS Sapatnekar
IEEE Transactions on Electron Devices 66 (4), 1990-1996, 2019
322019
Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions
DL Zhang, C Sun, Y Lv, KB Schliep, Z Zhao, JY Chen, PM Voyles, ...
Physical Review Applied 9 (4), 044028, 2018
322018
Bipolar electric-field switching of perpendicular magnetic tunnel junctions through voltage-controlled exchange coupling
D Zhang, M Bapna, W Jiang, D Sousa, YC Liao, Z Zhao, Y Lv, P Sahu, ...
Nano letters 22 (2), 622-629, 2022
312022
Evaluation of operating margin and switching probability of voltage-controlled magnetic anisotropy magnetic tunnel junctions
J Song, I Ahmed, Z Zhao, D Zhang, SS Sapatnekar, JP Wang, CH Kim
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 4 …, 2018
252018
A DNA read alignment accelerator based on computational RAM
ZI Chowdhury, M Zabihi, SK Khatamifard, Z Zhao, S Resch, M Razaviyayn, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 6 …, 2020
232020
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