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Shubham Tayal
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Year
Analog/RF performance analysis of channel engineered high-k gate-stack based junctionless trigate-FinFET
S Tayal, A Nandi
Superlattices and Microstructures 112, 287-295, 2017
432017
Optimization of gate-stack in junctionless Si-nanotube FET for analog/RF applications
S Tayal, A Nandi
Materials Science in Semiconductor Processing 80, 63-67, 2018
372018
Analog/RF performance analysis of inner gate engineered junctionless Si nanotube
S Tayal, A Nandi
Superlattices and Microstructures 111, 862-871, 2017
352017
Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study
J Ajayan, D Nirmal, S Tayal, S Bhattacharya, L Arivazhagan, ASA Fletcher, ...
Microelectronics Journal 114, 105141, 2021
322021
Effect of FIBL in-conjunction with channel parameters on analog and RF FOM of FinFET
S Tayal, A Nandi
Superlattices and Microstructures 105, 152-162, 2017
292017
Study of 6T SRAM cell using high-k gate dielectric based junctionless silicon nanotube FET
S Tayal, A Nandi
Superlattices and Microstructures 112, 143-150, 2017
242017
Study of temperature effect on junctionless Si nanotube FET concerning analog/RF performance
S Tayal, A Nandi
Cryogenics 92, 71-75, 2018
172018
Performance analysis of junctionless DG‐MOSFET‐based 6T‐SRAM with gate‐stack configuration
S Tayal, A Nandi
Micro & Nano Letters 13 (6), 838-841, 2018
172018
Enhancing the delay performance of junctionless silicon nanotube based 6T SRAM
S Tayal, A Nandi
Micro & Nano Letters 13 (7), 965-968, 2018
162018
Temperature sensitivity analysis of inner-gate engineered JL-SiNT-FET: An Analog/RF prospective
S Tayal, V Mittal, S Jadav, S Gupta, A Nandi, B Krishan
Cryogenics 108, 103087, 2020
142020
A comprehensive investigation of vertically stacked silicon nanosheet field effect transistors: an analog/rf perspective
S Tayal, J Ajayan, LMIL Joseph, J Tarunkumar, D Nirmal, B Jena, A Nandi
Silicon 14 (7), 3543-3550, 2022
132022
Performance analysis of ferroelectric gaa mosfet with metal grain work function variability
B Jena, K Bhol, U Nanda, S Tayal, SR Routray
Silicon 14 (6), 3005-3012, 2022
132022
A review on emerging negative capacitance field effect transistor for low power electronics
SB Rahi, S Tayal, AK Upadhyay
Microelectronics Journal 116, 105242, 2021
122021
Effect of High-K Gate Dielectric In-Conjunction with Channel Parameters on the Performance of FinFET Based 6T SRAM
S Tayal, A Nandi
Journal of Nanoelectronics and Optoelectronics 13 (05), 768–774, 2018
122018
Optimization of design space for vertically stacked junctionless nanosheet FET for analog/RF applications
S Valasa, S Tayal, LR Thoutam
Silicon 14 (16), 10347-10356, 2022
102022
Optimization of device dimensions of high-k gate dielectric based dg-tfet for improved analog/rf performance
S Tayal, G Vibhu, S Meena, R Gupta
Silicon 14 (7), 3515-3521, 2022
102022
Comparative analysis of high-k gate stack based conventional & junctionless FinFET
S Tayal, A Nandi
2017 14th IEEE India Council International Conference (INDICON), 1-4, 2017
102017
Channel thickness dependency of high-k gate dielectric based double-gate CMOS inverter
S Tayal, P Samrat, V Keerthi, B Vandana, S Gupta
International Journal of Nano Dimension 11 (3), 215-221, 2020
92020
Study of inner-gate engineering effect on analog/radio frequency performance of conventional Si-nanotube field effect transistor
S Tayal, S Gupta, A Nandi, A Gupta, S Jadav
Journal of Nanoelectronics and Optoelectronics 14 (7), 953-957, 2019
92019
Interfacial layer dependence of high-k gate stack based conventional trigate FinFET concerning analog/RF performance
S Tayal, A Nandi
2018 4th International Conference on Devices, Circuits and Systems (ICDCS …, 2018
92018
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