Andrew Lohn
Andrew Lohn
Information Scientist and Professor of Public Policy, RAND Corporation
Verified email at
Cited by
Cited by
High‐speed and low‐energy nitride memristors
BJ Choi, AC Torrezan, JP Strachan, PG Kotula, AJ Lohn, MJ Marinella, ...
Advanced Functional Materials 26 (29), 5290-5296, 2016
A physical model of switching dynamics in tantalum oxide memristive devices
PR Mickel, AJ Lohn, B Joon Choi, J Joshua Yang, MX Zhang, ...
Applied Physics Letters 102 (22), 223502, 2013
Isothermal switching and detailed filament evolution in memristive systems
AJ Lohn, PR Mickel, CD James, MJ Marinella
Advanced Materials 26 (26), 4486-4490, 2014
How Might Artificial Intelligence Affect the Risk of Nuclear War?
E Geist, AJ Lohn, 2018
Toward trustworthy AI development: mechanisms for supporting verifiable claims
M Brundage, S Avin, J Wang, H Belfield, G Krueger, G Hadfield, H Khlaaf, ...
arXiv preprint arXiv:2004.07213, 2020
A Comparison of the Radiation Response of and Memristors
DR Hughart, AJ Lohn, PR Mickel, SM Dalton, PE Dodd, MR Shaneyfelt, ...
IEEE Transactions on Nuclear Science 60 (6), 4512-4519, 2013
Optimizing TaOx memristor performance and consistency within the reactive sputtering “forbidden region”
AJ Lohn, JE Stevens, PR Mickel, MJ Marinella
Applied Physics Letters 103 (6), 063502, 2013
Reactive sputtering of substoichiometric Ta2Ox for resistive memory applications
JE Stevens, AJ Lohn, SA Decker, BL Doyle, PR Mickel, MJ Marinella
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 32 (2 …, 2014
Evaluating tantalum oxide stoichiometry and oxidation states for optimal memristor performance
MT Brumbach, PR Mickel, AJ Lohn, AJ Mirabal, MA Kalan, JE Stevens, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 32 (5 …, 2014
Memristive switching: physical mechanisms and applications
PR Mickel, AJ Lohn, MJ Marinella
Modern Physics Letters B 28 (10), 1430003, 2014
Optical properties of indium phosphide nanowire ensembles at various temperatures
AJ Lohn, T Onishi, NP Kobayashi
Nanotechnology 21 (35), 355702, 2010
A CMOS compatible, forming free TaOx ReRAM
AJ Lohn, JE Stevens, PR Mickel, DR Hughart, MJ Marinella
ECS Transactions 58 (5), 59, 2013
Detection and characterization of multi-filament evolution during resistive switching
PR Mickel, AJ Lohn, MJ Marinella
Applied Physics Letters 105 (5), 053503, 2014
Analytical estimations for thermal crosstalk, retention, and scaling limits in filamentary resistive memory
AJ Lohn, PR Mickel, MJ Marinella
Journal of Applied Physics 115 (23), 234507, 2014
Epitaxial growth of ensembles of indium phosphide nanowires on various non-single crystal substrates using an amorphous template layer
AJ Lohn, X Li, NP Kobayashi
Journal of crystal growth 315 (1), 157-159, 2011
Evolutional transformation of copper oxide nanowires to copper nanowires by a reduction technique
JW Han, A Lohn, NP Kobayashi, M Meyyappan
Materials Express 1 (2), 176-180, 2011
Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms
NP Kobayashi, S Mathai, X Li, VJ Logeeswaran, MS Islam, A Lohn, ...
Applied Physics A 95 (4), 1005-1013, 2009
Memristor using a transition metal nitride insulator
JE Stevens, M Marinella, AJ Lohn
US Patent 8,872,246, 2014
Dynamics of percolative breakdown mechanism in tantalum oxide resistive switching
AJ Lohn, PR Mickel, MJ Marinella
Applied Physics Letters 103 (17), 173503, 2013
What's the buzz? The city-scale impacts of drone delivery
AJ Lohn
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