Daryoosh Dideban
Daryoosh Dideban
Associate professor of electronics and electrical engineering, University of Kashan
Verified email at kashanu.ac.ir - Homepage
Title
Cited by
Cited by
Year
Statistical-variability compact-modeling strategies for BSIM4 and PSP
B Cheng, D Dideban, N Moezi, C Millar, G Roy, X Wang, S Roy, A Asenov
IEEE Design & Test of Computers 27 (2), 26-35, 2010
672010
A novel integrated SET based inverter for nano power electronic applications
N Moezi, D Dideban, A Ketabi
Am. J. Eng. Applied Sci 1, 219-222, 2008
262008
A novel graphene tunnelling field effect transistor (GTFET) using bandgap engineering
MS Mobarakeh, N Moezi, M Vali, D Dideban
Superlattices and Microstructures 100, 1221-1229, 2016
232016
Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects
AH Bayani, D Dideban, M Vali, N Moezi
Semiconductor Science and Technology 31 (4), 045009, 2016
212016
A novel Silicon on Insulator MOSFET with an embedded heat pass path and source side channel doping
M Karbalaei, D Dideban
Superlattices and Microstructures 90, 53-67, 2016
172016
Modeling and simulation of transistor and circuit variability and reliability
A Asenov, B Cheng, D Dideban, U Kovac, N Moezi, C Millar, G Roy, ...
IEEE Custom Integrated Circuits Conference 2010, 1-8, 2010
172010
An analytical approach to model capacitance and resistance of capped carbon nanotube single electron transistor
V KhademHosseini, D Dideban, MT Ahmadi, R Ismail
AEU-International Journal of Electronics and Communications 90, 97-102, 2018
162018
Hydrogen sensitive field-effect transistor based on germanene nanoribbon and optical properties of hydrogenated germanene
AH Bayani, D Dideban, N Moezi
Journal of Computational Electronics 15 (2), 381-388, 2016
152016
Investigation of sub-10nm cylindrical surrounding gate germanium nanowire field effect transistor with different cross-section areas
AH Bayani, D Dideban, J Voves, N Moezi
Superlattices and Microstructures 105, 110-116, 2017
132017
Single Electron Transistor Scheme Based on Multiple Quantum Dot Islands: Carbon Nanotube and Fullerene
HH V Khademhosseini, D Dideban, MT Ahmadi, R Ismail
ECS Journal of Solid State Science and Technology 7 (10), M145-M152, 2018
122018
A novel approach to the statistical generation of non-normal distributed PSP compact model parameters using a nonlinear power method
U Kovac, D Dideban, B Cheng, N Moezi, G Roy, A Asenov
2010 International Conference on Simulation of Semiconductor Processes and …, 2010
122010
Comparative study of nanoribbon field effect transistors based on silicene and graphene
F Salimian, D Dideban
Materials Science in Semiconductor Processing 93, 92-98, 2019
112019
Impact of uniaxial compressive strain on physical and electronic parameters of a 10 nm germanene nanoribbon field effect transistor
AH Bayani, D Dideban, N Moezi
Superlattices and Microstructures 100, 198-208, 2016
112016
Impact of statistical parameter set selection on the statistical compact model accuracy: BSIM4 and PSP case study
N Moezi, D Dideban, B Cheng, S Roy, A Asenov
Microelectronics Journal 44 (1), 7-14, 2013
112013
Silicene field effect transistor with high on/off current ratio and good current saturation
M Vali, D Dideban, N Moezi
Journal of Computational Electronics 15 (1), 138-143, 2016
102016
A scheme for a topological insulator field effect transistor
M Vali, D Dideban, N Moezi
Physica E: Low-dimensional Systems and Nanostructures 69, 360-363, 2015
102015
Benchmarking performance of a gate-all-around germanium nanotube field effect transistor (GAA-GeNTFET) against GAA-CNTFET
AH Bayani, D Dideban, M Akbarzadeh, N Moezi
ECS Journal of Solid State Science and Technology 6 (4), M24, 2017
82017
Tuning the analog and digital performance of Germanene nanoribbon field effect transistors with engineering the width and geometry of source, channel and drain region in the …
D Dideban, A Ketabi, M Vali, AH Bayani, H Heidari
Materials Science in Semiconductor Processing 80, 18-23, 2018
72018
Impact analysis of statistical variability on the accuracy of a propagation delay time compact model in nano-CMOS technology
H Jooypa, D Dideban
Journal of Computational Electronics 17 (1), 192-204, 2018
72018
A Silicene Nanotube Field Effect Transistor (SiNTFET) with an Electrically Induced Gap and High Value of Ion/Ioff
F Salimian, D Dideban
ECS Journal of Solid State Science and Technology 7 (2), 2018
72018
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