Electrically pumped lasing from Ge Fabry-Perot resonators on Si R Koerner, M Oehme, M Gollhofer, M Schmid, K Kostecki, S Bechler, ... Optics express 23 (11), 14815-14822, 2015 | 182 | 2015 |
GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz M Oehme, K Kostecki, K Ye, S Bechler, K Ulbricht, M Schmid, M Kaschel, ... Optics express 22 (1), 839-846, 2014 | 105 | 2014 |
GeSn heterojunction LEDs on Si substrates M Oehme, K Kostecki, T Arguirov, G Mussler, K Ye, M Gollhofer, M Schmid, ... IEEE Photonics Technology Letters 26 (2), 187-189, 2013 | 104 | 2013 |
GeSn/Ge multiquantum well photodetectors on Si substrates M Oehme, D Widmann, K Kostecki, P Zaumseil, B Schwartz, M Gollhofer, ... Optics letters 39 (16), 4711-4714, 2014 | 92 | 2014 |
Electroluminescence of GeSn/Ge MQW LEDs on Si substrate B Schwartz, M Oehme, K Kostecki, D Widmann, M Gollhofer, R Koerner, ... Optics letters 40 (13), 3209-3212, 2015 | 60 | 2015 |
Franz-Keldysh effect in GeSn pin photodetectors M Oehme, K Kostecki, M Schmid, M Kaschel, M Gollhofer, K Ye, ... Applied Physics Letters 104 (16), 2014 | 38 | 2014 |
Integrated collinear refractive index sensor with Ge PIN photodiodes L Augel, Y Kawaguchi, S Bechler, R Körner, J Schulze, H Uchida, ... ACS Photonics 5 (11), 4586-4593, 2018 | 36 | 2018 |
Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes M Schmid, M Oehme, M Gollhofer, R Körner, M Kaschel, E Kasper, ... Thin solid films 557, 351-354, 2014 | 27 | 2014 |
Absorption coefficients of GeSn extracted from PIN photodetector response K Ye, W Zhang, M Oehme, M Schmid, M Gollhofer, K Kostecki, ... Solid-State Electronics 110, 71-75, 2015 | 25 | 2015 |
The Zener-Emitter: A novel superluminescent Ge optical waveguide-amplifier with 4.7 dB gain at 92 mA based on free-carrier modulation by direct Zener tunneling monolithically … R Körner, D Schwaiz, IA Fischer, L Augel, S Bechler, L Haenel, M Kern, ... 2016 IEEE International Electron Devices Meeting (IEDM), 22.5. 1-22.5. 4, 2016 | 16 | 2016 |
S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode W Zhang, Y Yamamoto, M Oehme, K Matthies, AI Raju, VSS Srinivasan, ... Japanese journal of applied physics 55 (4S), 04EF03, 2016 | 9 | 2016 |
Contact resistivities of antimony-doped n-type Ge1− xSnx VSS Srinivasan, IA Fischer, L Augel, A Hornung, R Koerner, K Kostecki, ... Semiconductor Science and Technology 31 (8), 08LT01, 2016 | 8 | 2016 |
Virtual substrate technology for Ge1-XSnX heteroepitaxy on Si substrates K Kostecki, M Oehme, R Koerner, D Widmann, M Gollhofer, S Bechler, ... ECS Transactions 64 (6), 811, 2014 | 8 | 2014 |
Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges EG Rolseth, A Blech, IA Fischer, Y Hashad, R Koerner, K Kostecki, ... 2017 40th International Convention on Information and Communication …, 2017 | 5 | 2017 |
Luminescence of strained Ge on GeSn virtual substrate grown on Si (001) B Schwartz, M Oehme, R Koerner, S Bechler, J Schulze, M Kittler Silicon Photonics XII 10108, 60-66, 2017 | 5 | 2017 |
S-parameter based device-level CV measurement of pin single-drift IMPATT diode for millimeter-wave applications W Zhang, M Oehme, K Kostecki, K Matthies, V Stefani, AI Raju, D Noll, ... 2016 IEEE MTT-S International Wireless Symposium (IWS), 1-4, 2016 | 5 | 2016 |
An integrated plasmonic refractive index sensor: Al nanohole arrays on Ge PIN photodiodes L Augel, S Bechler, R Körner, M Oehme, J Schulze, IA Fischer 2017 IEEE International Electron Devices Meeting (IEDM), 40.5. 1-40.5. 4, 2017 | 4 | 2017 |
Polarization multiplexing in VCSEL-arrays R Koerner, S Bader, M Herper, T Kischkat-Grimm, J Tempeler, ... Vertical-Cavity Surface-Emitting Lasers XXVII 12439, 1243902, 2023 | 3 | 2023 |
Engineering of germanium tunnel junctions for optical applications R Koerner, IA Fischer, D Schwarz, CJ Clausen, N Hoppe, J Schulze IEEE Photonics Journal 10 (2), 1-12, 2018 | 3 | 2018 |
Tunnel-modulated Ge LED/laser light source and a sub-thermal voltage switching detector for the monolithic on-chip optical transceiver R Koerner, IA Fischer, R Soref, D Schwarz, CJ Clausen, L Hänel, ... 2017 IEEE International Electron Devices Meeting (IEDM), 24.4. 1-24.4. 4, 2017 | 3 | 2017 |