| Atomic and electronic structure of exfoliated black phosphorus RJ Wu, M Topsakal, T Low, MC Robbins, N Haratipour, JS Jeong, ... Journal of Vacuum Science & Technology A 33 (6), 2015 | 97 | 2015 |
| Black Phosphorus p-MOSFETs With 7-nm HfO2Gate Dielectric and Low Contact Resistance N Haratipour, MC Robbins, SJ Koester IEEE Electron Device Letters 36 (4), 411-413, 2015 | 97 | 2015 |
| Fundamental limits on the subthreshold slope in Schottky source/drain black phosphorus field-effect transistors N Haratipour, S Namgung, SH Oh, SJ Koester ACS nano 10 (3), 3791-3800, 2016 | 78 | 2016 |
| Symmetric complementary logic inverter using integrated black phosphorus and MoS2 transistors Y Su, CU Kshirsagar, MC Robbins, N Haratipour, SJ Koester 2D Materials 3 (1), 011006, 2016 | 61 | 2016 |
| 3d-ferroelectric random access memory (3d-fram) S Shivaraman, SC Chang, AV Penumatcha, N Haratipour, UE Avci US Patent App. 16/599,422, 2021 | 55 | 2021 |
| Capacitive Sensing of Intercalated H2O Molecules Using Graphene EJ Olson, R Ma, T Sun, MA Ebrish, N Haratipour, K Min, NR Aluru, ... ACS applied materials & interfaces 7 (46), 25804-25812, 2015 | 51 | 2015 |
| Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction M Si, Z Zhang, SC Chang, N Haratipour, D Zheng, J Li, UE Avci, PD Ye ACS nano 15 (3), 5689-5695, 2021 | 46 | 2021 |
| Ambipolar black phosphorus MOSFETs with record n-channel transconductance N Haratipour, SJ Koester IEEE Electron Device Letters 37 (1), 103-106, 2015 | 46 | 2015 |
| Applications of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuits A Sharma, JT Kavalieros, IA Young, S Manipatruni, R Krishnamurthy, ... US Patent 11,138,499, 2021 | 43 | 2021 |
| Anti-ferroelectric HfxZr1-xO2 Capacitors for High-density 3-D Embedded-DRAM SC Chang, N Haratipour, S Shivaraman, TL Brown-Heft, J Peck, CC Lin, ... 2020 IEEE International Electron Devices Meeting (IEDM), 28.1. 1-28.1. 4, 2020 | 43 | 2020 |
| High-performance black phosphorus MOSFETs using crystal orientation control and contact engineering N Haratipour, S Namgung, R Grassi, T Low, SH Oh, SJ Koester IEEE Electron Device Letters 38 (5), 685-688, 2017 | 29 | 2017 |
| Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering N Haratipour, SC Chang, CC Lin, J Kavalieros, U Avci, I Young US Patent 11,063,131, 2021 | 25 | 2021 |
| A physics-based compact model for ultrathin black phosphorus FETs—Part I: Effect of contacts, temperature, ambipolarity, and traps E Yarmoghaddam, N Haratipour, SJ Koester, S Rakheja IEEE Transactions on Electron Devices 67 (1), 389-396, 2019 | 25 | 2019 |
| Mobility Anisotropy in Black Phosphorus MOSFETs With HfO2Gate Dielectrics N Haratipour, Y Liu, RJ Wu, S Namgung, PP Ruden, KA Mkhoyan, SH Oh, ... IEEE Transactions on Electron Devices 65 (10), 4093-4101, 2018 | 22 | 2018 |
| FeRAM using anti-ferroelectric capacitors for high-speed and high-density embedded memory SC Chang, N Haratipour, S Shivaraman, C Neumann, S Atanasov, J Peck, ... 2021 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2021 | 21 | 2021 |
| Multi-layer MoTe2 p-channel MOSFETs with high drive current N Haratipour, SJ Koester 72nd Device Research Conference, 171-172, 2014 | 18 | 2014 |
| Black phosphorus n-MOSFETs with record transconductance N Haratipour, MC Robbins, SJ Koester 2015 73rd Annual Device Research Conference (DRC), 243-244, 2015 | 17 | 2015 |
| A physics-based compact model for ultrathin black phosphorus FETs—Part II: Model validation against numerical and experimental data E Yarmoghaddam, N Haratipour, SJ Koester, S Rakheja IEEE Transactions on Electron Devices 67 (1), 397-405, 2019 | 14 | 2019 |
| The effect of output-input isolation on the scaling and energy consumption of all-spin logic devices J Hu, N Haratipour, SJ Koester Journal of Applied Physics 117 (17), 2015 | 13 | 2015 |
| Hafnia-based FeRAM: a path toward ultra-high density for next-generation high-speed embedded memory N Haratipour, SC Chang, S Shivaraman, C Neumann, YC Liao, ... 2022 International Electron Devices Meeting (IEDM), 6.7. 1-6.7. 4, 2022 | 11 | 2022 |
