Influence of exponential-doping structure on photoemission capability of transmission-mode GaAs photocathodes Y Zhang, J Niu, J Zhao, J Zou, B Chang, F Shi, H Cheng Journal of Applied Physics 108 (9), 2010 | 96 | 2010 |
Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode Z Yang, B Chang, J Zou, J Qiao, P Gao, Y Zeng, H Li Applied Optics 46 (28), 7035-7039, 2007 | 89 | 2007 |
Variation of spectral response for exponential-doped transmission-mode GaAs photocathodes in the preparation process Y Zhang, J Niu, J Zou, B Chang, Y Xiong Applied Optics 49 (20), 3935-3940, 2010 | 78 | 2010 |
Variation of quantum-yield curves for GaAs photocathodes under illumination J Zou, B Chang, H Chen, L Liu Journal of applied physics 101 (3), 2007 | 75 | 2007 |
Gradient-doping negative electron affinity photocathodes J Zou, B Chang Optical Engineering 45 (5), 054001-054001-5, 2006 | 74 | 2006 |
Distribution of carriers in gradient-doping transmission-mode GaAs photocathodes grown by molecular beam epitaxy Z Yi-Jun, C Ben-Kang, Y Zhi, N Jun, Z Ji-Jun Chinese Physics B 18 (10), 4541, 2009 | 73 | 2009 |
Negative electron affinity GaAs wire-array photocathodes J Zou, X Ge, Y Zhang, W Deng, Z Zhu, W Wang, X Peng, Z Chen, B Chang Optics express 24 (5), 4632-4639, 2016 | 69 | 2016 |
Theoretical calculation of quantum yield for exponential-doping GaAs photocathodes JJ Zou, BK Chang, Z Yang | 65 | 2007 |
Evolution of surface potential barrier for negative-electron-affinity GaAs photocathodes J Zou, B Chang, Z Yang, Y Zhang, J Qiao Journal of Applied Physics 105 (1), 2009 | 62 | 2009 |
Electrothermal dynamics of semiconductor nanowires under local carrier modulation D Fu, J Zou, K Wang, R Zhang, D Yu, J Wu Nano letters 11 (9), 3809-3815, 2011 | 61 | 2011 |
High-efficiency graded band-gap AlxGa1− xAs/GaAs photocathodes grown by metalorganic chemical vapor deposition Y Zhang, B Chang, J Niu, J Zhao, J Zou, F Shi, H Cheng Applied Physics Letters 99 (10), 2011 | 54 | 2011 |
Photoemission characteristics of different-structure reflection-mode GaAs photocathodes Y Zhang, J Zou, J Niu, J Zhao, B Chang Journal of Applied Physics 110 (6), 2011 | 49 | 2011 |
Photoemission from advanced heterostructured AlxGa1-xAs/GaAs photocathodes under multilevel built-in electric field C Feng, Y Zhang, Y Qian, B Chang, F Shi, G Jiao, J Zou Optics Express 23 (15), 19478-19488, 2015 | 45 | 2015 |
Optical-Resonance-Enhanced Photoemission from Nanostructured Photocathodes X Peng, Z Wang, Y Liu, DM Manos, M Poelker, M Stutzman, B Tang, ... Physical Review Applied 12 (6), 064002, 2019 | 39 | 2019 |
Photoemission characteristics of graded band-gap AlGaAs/GaAs wire photocathode X Ding, X Ge, J Zou, Y Zhang, X Peng, W Deng, Z Chen, W Zhao, ... Optics Communications 367, 149-154, 2016 | 31 | 2016 |
Stability and photoemission characteristics for GaAs photocathodes in a demountable vacuum system J Zou, B Chang, Z Yang, J Qiao, Y Zeng Applied Physics Letters 92 (17), 2008 | 29 | 2008 |
Comparison of the photoemission behaviour between negative electron affinity GaAs and GaN photocathodes YJ Zhang, JJ Zou, XH Wang, BK Chang, YS Qian, JJ Zhang, P Gao Chinese Physics B 20 (4), 048501, 2011 | 28 | 2011 |
Improved activation technique for preparing high-efficiency GaAs photocathodes Y Zhang, Y Qian, C Feng, F Shi, H Cheng, J Zou, J Zhang, X Zhang Optical Materials Express 7 (9), 3456-3465, 2017 | 25 | 2017 |
Field bus CAN principle and application technology R Yuntao, Z Jijun, Z Yongyun Beijing University of Aeronautics and Astronautics Press, Beijing 88, 2003 | 25 | 2003 |
Principle and Application Technology of CAN Fieldbus [M] R Yun-tao, Z Jijun, Z Yongyun Beijing University of Aeronautics and Astronautics, 18-22, 2003 | 20 | 2003 |