N.B.Balamurugan (0000-0002-0541-6123)
N.B.Balamurugan (0000-0002-0541-6123)
Verified email at tce.edu - Homepage
Title
Cited by
Cited by
Year
Analytical approach of a nanoscale triple-material surrounding gate (TMSG) MOSFETs for reduced short-channel effects
PS Dhanaselvam, NB Balamurugan
Microelectronics Journal 44 (5), 400-404, 2013
332013
Analytical modelling and simulation of single-gate SOI TFET for low-power applications
TS Arun Samuel, NB Balamurugan, S Bhuvaneswari, D Sharmila, ...
International Journal of Electronics 101 (6), 779-788, 2014
262014
New analytical model for nanoscale tri-gate SOI MOSFETs including quantum effects
P Vimala, NB Balamurugan
IEEE Journal of the Electron Devices Society 2 (1), 1-7, 2014
192014
2D transconductance to drain current ratio modeling of dual material surrounding gate nanoscale SOI MOSFETs
NB Balamurugan, K Sankaranarayanan, MF John
Journal of Semiconductor Technology and Science 9 (2), 110-116, 2009
192009
New dual material double gate junctionless tunnel FET: Subthreshold modeling and simulation
GL Priya, NB Balamurugan
AEU-International Journal of Electronics and Communications 99, 130-138, 2019
162019
Triple material surrounding gate (TMSG) nanoscale tunnel FET-analytical modeling and simulation
P Vanitha, NB Balamurugan, GL Priya
Journal of Semiconductor Technology and science 15 (6), 585-593, 2015
152015
An analytical modeling and simulation of dual material double gate tunnel field effect transistor for low power applications
TSA Samuel, NB Balamurugan
Journal of Electrical Engineering & Technology 9 (1), 247-253, 2014
152014
A 2D Transconductance and Sub-threshold behavior model for triple material surrounding gate (TMSG) MOSFETs
PS Dhanaselvam, NB Balamurugan, VN Ramakrishnan
Microelectronics Journal 44 (12), 1159-1164, 2013
152013
Analytical modeling and simulation of dual material gate tunnel field effect transistors
TSA Samuel, NB Balamurugan, S Sibitha, R Saranya, D Vanisri
Journal of Electrical Engineering & Technology 8 (6), 1481-1486, 2013
142013
Modelling the centroid and charge density in double-gate MOSFETs including quantum effects
P Vimala, NB Balamurugan
International journal of Electronics 100 (9), 1283-1295, 2013
132013
Analytical threshold voltage modeling of surrounding gate silicon nanowire transistors with different geometries
MK Pandian, NB Balamurugan
Journal of Electrical Engineering & Technology 9 (6), 2079-2088, 2014
122014
Modeling and simulation of centroid and inversion charge density in cylindrical surrounding gate MOSFETs including quantum effects
P Vimala, NB Balamurugan
Journal of Semiconductors 34 (11), 114001, 2013
122013
2D analytical modeling and simulation of dual material DG MOSFET for biosensing application
B Buvaneswari, NB Balamurugan
AEU-International Journal of Electronics and Communications 99, 193-200, 2019
112019
An analytical modeling and simulation of dual material double gate tunnel field effect transistor for low power applications
TS Arun Samuel, NB Balamurugan
Journal of Electrical Engineering and Technology 9 (1), 247-253, 2014
102014
A new scaling theory for the effective conducting path effect of dual material surrounding gate Nanoscale MOSFETs
NB Balamurugan, K Sankaranarayanan, M Suguna
Journal of Semiconductor Technology and Science 8 (1), 92-97, 2008
102008
Performance analysis of silicon nanowire transistors considering effective oxide thickness of high-k gate dielectric
ST Chandra, NB Balamurugan
Journal of Semiconductors 35 (4), 044001, 2014
92014
An analytical modeling of threshold voltage and subthreshold swing on dual material surrounding gate nanoscale mosfets for high speed wireless communication
NB Balamurugan, K Sankaranarayanan, P Amutha, MF John
Journal of Semiconductor Technology and Science 8 (3), 221-226, 2008
92008
A 2d analytical modeling of single halo triple material surrounding gate (SHTMSG) mosfet
PS Dhanaselvam, NB Balamurugan, GC Chakaravarthi, RP Ramesh, ...
Journal of Electrical Engineering and Technology 9 (4), 1355-1359, 2014
82014
Quantum mechanical compact modeling of symmetric double-gate MOSFETs using variational approach
P Vimala, NB Balamurugan
Journal of Semiconductors 33 (3), 034001, 2012
82012
New subthreshold performance analysis of germanium based dual halo gate stacked triple material surrounding gate tunnel field effect transistor
M Venkatesh, NB Balamurugan
Superlattices and Microstructures 130, 485-498, 2019
72019
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Articles 1–20