| Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By O Based Gate Stack Engineering SD Gupta, A Soni, V Joshi, J Kumar, R Sengupta, H Khand, B Shankar, ... IEEE Transactions on Electron Devices 66 (6), 2544-2550, 2019 | 39 | 2019 |
| Capacitance–Conductance Spectroscopic Investigation of Interfacial Oxide layer in Ni/4H–SiC (0001) Schottky Diode SK Gupta, B Shankar, WR Taube, J Singh, J Akhtar Physica B: Condensed Matter 434, 44-50, 2014 | 38 | 2014 |
| ESD Reliability of AlGaN/GaN HEMT Technology B Shankar, S Raghavan, M Shrivastava IEEE Transactions on Electron Devices, doi: 10.1109/TED.2019.2926781, 2019 | 25 | 2019 |
| Unique ESD Behavior and Failure Modes of AlGaN/GaN HEMTs B Shankar, M Shrivastava 2016 IEEE International Reliability Physics Symposium (IRPS), EL-7-1-EL-7-5, 2016 | 21 | 2016 |
| Trap-assisted and stress induced safe operating area limits of AlGaN/GaN HEMTs B Shankar, A Soni, S Raghavan, M Shrivastava IEEE Transactions on Device and Materials Reliability 20 (4), 767-774, 2020 | 19 | 2020 |
| Distinct Failure Modes of AlGaN/GaN HEMTs Under ESD Conditions B Shankar, S Raghavan, M Shrivastava IEEE Transactions on Electron Devices 67 (4), 1567-1574, 2020 | 19 | 2020 |
| First Observations On the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs B Shankar, A Soni, H Chandrasekar, S Raghavan, M Shrivastava IEEE Transactions on Electron Devices 66 (8), 3433-3440, 2019 | 19 | 2019 |
| Safe Operating Area of Polarization Super Junction GaN HEMTs And Diodes B Shankar, M Shrivastava IEEE Transactions on Electron Devices, doi: 10.1109/TED.2019.2933362, 2019 | 17 | 2019 |
| Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs B Shankar, A Soni, M Singh, R Soman, H Chandrasekar, N Mohan, ... 2017 IEEE International Reliability Physics Symposium (IRPS), WB-5.1-WB-5.5, 2017 | 17 | 2017 |
| On the ESD Behavior of AlGaN/GaN Schottky Diodes and Trap Assisted Failure Mechanism B Shankar, R Sengupta, SD Gupta, A Soni, N Mohan, N Bhat, ... 2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 1-6, 2017 | 14 | 2017 |
| High-k Dielectrics Based Field Plate Edge Termination Engineering in 4H-SiC Schottky Diode B Shankar, SK Gupta, WR Taube, J Akhtar International Journal of Electronics 103 (12), 2064-2074, 2015 | 14 | 2015 |
| Design of Ka-Band Doherty Power Amplifier Using 0.15 μmd GaN on SiC Process Based on Novel Complex Load Modulation X Zhou, S Chowdhury, RP Martinez, B Shankar 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 13 | 2021 |
| Electro-Thermo-Mechanical Reliability of Recessed Barrier AlGaN/GaN Schottky Diodes Under Pulse Switching Conditions B Shankar, A Soni, M Shrivastava Transactions on Electron Devices, 10.1109/TED.2020.2981568, 2020 | 13 | 2020 |
| Novel all-around diamond integration with GaN HEMTs demonstrating highly efficient device cooling R Soman, M Malakoutian, B Shankar, D Field, E Akso, N Hatui, NJ Hines, ... 2022 International Electron Devices Meeting (IEDM), 30.8. 1-30.8. 4, 2022 | 10 | 2022 |
| Trap Assisted Stress Induced ESD Reliability of GaN Schottky Diodes B Shankar, R Singh, R Sengupta, H Khand, A Soni, SD Gupta, ... Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2018 40th …, 2018 | 10 | 2018 |
| Time Dependent Shift in SOA boundary and Early Breakdown of Epi-Stack in AlGaN/GaN HEMTs Under Fast Cyclic Transient Stress B Shankar, S Shikha, A Singh, J Kumar, A Soni, SD Gupta, S Raghavan, ... IEEE Transactions on Device and Materials Reliability 20 (3), 562 - 569, 2020 | 7 | 2020 |
| ESD Behavior of AlGaN/GaN Schottky Diodes B Shankar, SD Gupta, A Soni, S Raghavan, M Shrivastava IEEE Transactions on Device and Materials Reliability 19 (2), 437-444, 2019 | 7 | 2019 |
| Study of Avalanche Behavior in 3 kV GaN Vertical PN Diode Under UIS Stress for Edge-termination Optimization B Shankar, Z Bian, K Zeng, C Meng, RP Martinez, S Chowdhury, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 2B. 2-1-2B. 2-4, 2022 | 6 | 2022 |
| Time Dependent Early Breakdown of AIGaN/GaN Epi Stacks and Shift in SOA Boundary of HEMTs Under Fast Cyclic Transient Stress B Shankar, A Soni, SD Gupta, S Shikha, S Singh, S Raghavan, ... 2018 IEEE International Electron Devices Meeting (IEDM), 34.6. 1-34.6. 4, 2018 | 6 | 2018 |
| Safe Operating Area (SOA) Reliability of Polarization Super Junction (PSJ) GaN FETs B Shankar, A Soni, SD Gupta, M Shrivastava Reliability Physics Symposium (IRPS), 2018 IEEE International, 4E-3.1-4E-3.4, 2018 | 6 | 2018 |
Mayank ShrivastavaIndian Institute of Science BangaloreVerified email at iisc.ac.in
