| Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target SS Kushvaha, MS Kumar, KK Maurya, MK Dalai, ND Sharma AIP Advances 3 (9), 092109, 2013 | 63 | 2013 |
| Study of preferential localized degradation and breakdown of HfO 2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO 2 dielectrics K Shubhakar, KL Pey, N Raghavan, SS Kushvaha, M Bosman, Z Wang, ... Microelectronic Engineering 109, 364-369, 2013 | 52 | 2013 |
| Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy SS Kushvaha, MS Kumar, AK Shukla, BS Yadav, DK Singh, M Jewariya, ... RSC Advances 5 (107), 87818-87830, 2015 | 46 | 2015 |
| Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectors C Ramesh, P Tyagi, B Bhattacharyya, S Husale, KK Maurya, MS Kumar, ... Journal of Alloys and Compounds 770, 572-581, 2019 | 40 | 2019 |
| Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy K Shubhakar, KL Pey, SS Kushvaha, SJ O’Shea, N Raghavan, M Bosman, ... Applied Physics Letters 98 (7), 072902, 2011 | 37 | 2011 |
| Self-assembly of antimony nanowires on graphite XS Wang, SS Kushvaha, Z Yan, W Xiao Applied Physics Letters 88 (23), 233105, 2006 | 33 | 2006 |
| Influence of laser repetition rate on the structural and optical properties of GaN layers grown on sapphire (0001) by laser molecular beam epitaxy SS Kushvaha, MS Kumar, BS Yadav, PK Tyagi, S Ojha, KK Maurya, ... CrystEngComm 18, 744-753, 2016 | 31 | 2016 |
| Light assisted irreversible resistive switching in ultra thin hafnium oxide H Borkar, A Thakre, SS Kushvaha, RP Aloysius, A Kumar RSC Advances 5 (44), 35046-35051, 2015 | 30 | 2015 |
| Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy SS Kushvaha, P Pal, AK Shukla, AG Joshi, G Gupta, M Kumar, S Singh, ... AIP Advances 4 (2), 027114, 2014 | 27 | 2014 |
| Synthesis and magnetic properties of MnSb nanoparticles on Si-based substrates H Zhang, SS Kushvaha, S Chen, X Gao, D Qi, ATS Wee, XS Wang Applied Physics Letters 90 (20), 202503, 2007 | 24 | 2007 |
| Direct growth of self-aligned single-crystalline GaN nanorod array on flexible Ta foil for photocatalytic solar water-splitting P Tyagi, C Ramesh, J Kaswan, S Dhua, S John, AK Shukla, SC Roy, ... Journal of Alloys and Compounds 805, 97-103, 2019 | 22 | 2019 |
| Photoconductivity and photo-detection response of multiferroic bismuth iron oxide A Anshul, H Borkar, P Singh, P Pal, SS Kushvaha, A Kumar Applied Physics Letters 104 (13), 132910, 2014 | 22 | 2014 |
| Structural and electronic properties of epitaxial GaN layer grown on sapphire (0001) using laser molecular beam epitaxy SS Kushvaha, MS Kumar, M Maheshwari, AK Shukla, P Pal, KK Maurya Materials Research Express 1 (3), 035903, 2014 | 20 | 2014 |
| Chirality control and switching of vortices formed in hexagonal shaped ferromagnetic elements SYH Lua, SS Kushvaha, YH Wu, KL Teo, TC Chong Applied Physics Letters 93 (12), 122504, 2008 | 20 | 2008 |
| Structural, electronic and thermoelectric properties of Bi2Se3 thin films deposited by RF magnetron sputtering S Gautam, AK Verma, A Balapure, B Singh, R Ganesan, MS Kumar, ... Journal of Electronic Materials 51 (5), 2500-2509, 2022 | 17 | 2022 |
| Effect of nitridation temperature on formation and properties of GaN nanowall networks on sapphire (0 0 0 1) grown by laser MBE C Ramesh, P Tyagi, BS Yadav, S Ojha, KK Maurya, MS Kumar, ... Materials Science and Engineering: B 231, 105-114, 2018 | 17 | 2018 |
| Controlled epitaxial growth of GaN nanostructures on sapphire (11–20) using laser molecular beam epitaxy for photodetector applications V Aggarwal, C Ramesh, P Tyagi, S Gautam, A Sharma, S Husale, ... Materials Science in Semiconductor Processing 125, 105631, 2021 | 16 | 2021 |
| Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire R Dixit, P Tyagi, SS Kushvaha, S Chockalingam, BS Yadav, ND Sharma, ... Optical Materials 66, 142-148, 2017 | 16 | 2017 |
| Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness S Gautam, V Aggarwal, B Singh, VPS Awana, R Ganesan, SS Kushvaha Scientific Reports 12 (1), 9770, 2022 | 14 | 2022 |
| Role of Growth Temperature on Formation of Single crystalline GaN Nanorods on Flexible Titanium foil by Laser Molecular Beam Epitaxy C Ramesh, P Tyagi, G Abhiram, G Gupta, MS Kumar, SS Kushvaha Journal of Crystal Growth 509, 23-28, 2019 | 14 | 2019 |
Prof. Dr. Govind Gupta, FInstP (UK), F...Senior Principal Scientist & Professor, CSIR-National Physical Laboratory, New DelhiVerified email at nplindia.org
