Follow
Arvind Ajoy
Arvind Ajoy
Associate Professor, Indian Institute of Technology Palakkad
Verified email at iitpkd.ac.in - Homepage
Title
Cited by
Cited by
Year
Efficient and realistic device modeling from atomic detail to the nanoscale
JE Fonseca, T Kubis, M Povolotskyi, B Novakovic, A Ajoy, G Hegde, ...
Journal of Computational Electronics 12 (4), 592-600, 2013
1232013
Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors
S Fathipour, M Remskar, A Varlec, A Ajoy, R Yan, S Vishwanath, ...
Applied Physics Letters 106 (2), 2015
832015
Brillouin zone unfolding method for effective phonon spectra
TB Boykin, A Ajoy, H Ilatikhameneh, M Povolotskyi, G Klimeck
Physical Review B 90 (20), 205214, 2014
272014
Brillouin zone unfolding of complex bands in a nearest neighbour tight binding scheme
A Ajoy, KVRM Murali, S Karmalkar
Journal of Physics: Condensed Matter 24 (5), 055504, 2012
172012
Band structure lab
S Mukherjee, A Paul, N Neophytou, R Kim, J Geng, M Povolotskyi, ...
DOI: http://nanohub. org/resources/bandstrlab, 2015
162015
Sub-60 mV/decade steep transistors with compliant piezoelectric gate barriers
RK Jana, A Ajoy, G Snider, D Jena
2014 IEEE International Electron Devices Meeting, 13.6. 1-13.6. 4, 2014
132014
Transistor switches using active piezoelectric gate barriers
RK Jana, A Ajoy, G Snider, D Jena
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
82015
Unfolding and effective bandstructure calculations as discrete real-and reciprocal-space operations
TB Boykin, A Ajoy, H Ilatikhameneh, M Povolotskyi, G Klimeck
Physica B: Condensed Matter 491, 22-30, 2016
62016
SPICE-based multiphysics model to analyze the dynamics of ferroelectric negative-capacitance–electrostatic MEMS hybrid actuators
RT Raman, A Ajoy
IEEE Transactions on Electron Devices 67 (11), 5174-5181, 2020
52020
Analysis of electrostatic MEMS using energy-charge landscape
RT Raman, A Ajoy, R Padmanabhan
IEEE Transactions on Electron Devices 67 (10), 4413-4420, 2020
52020
Modeling of electrochemical metallization-based two-dimensional material memristors for neuromorphic applications
R Sasikumar, A Ajoy, R Padmanabhan
IEEE Transactions on Nanotechnology 20, 912-921, 2021
42021
Modeling of electrochemical metallization-based transport in vertical transition metal dichalcogenide (TMD) memristors
R Sasikumar, A Ajoy, R Padmanabhan
2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO), 159-163, 2020
42020
Complex bandstructure of Direct Bandgap III-V semiconductors: Application to tunneling
A Ajoy
International Workshop on the Physics of Semiconductor Devices 2011, 2012
42012
Airy function-based model for 2-DEG charge and surface potential in N-polar gallium nitride heterostructures
MA Menokey, A Ajoy
IEEE Transactions on Electron Devices 69 (7), 3861-3868, 2022
32022
Band to band tunneling in heterojunctions: Semi-classical versus quantum computation
A Ajoy
2012 15th International Workshop on Computational Electronics, 1-4, 2012
32012
Orientation dependent complex bandstructure of Si1−xGex alloys
A Ajoy, KVRM Murali, S Karmalkar, SE Laux
69th Device Research Conference, 113-114, 2011
32011
Analysis of Ferroelectric Negative Capacitance-Hybrid MEMS Actuator Using Energy–Displacement Landscape
RT Raman, J Shibu, R Padmanabhan, A Ajoy
IEEE Transactions on Electron Devices 69 (6), 3359-3366, 2022
22022
Synchronous Detection to Reduce Offsets in Focus Error of an Optical Pickup Unit
RS Sekar, A Ajoy
IEEE Transactions on Instrumentation and Measurement 70, 1-8, 2020
22020
On a simple scheme for computing the electronic energy levels of a finite system from those of the corresponding infinite system
A Ajoy, S Karmalkar
Journal of Physics: Condensed Matter 22 (43), 435502, 2010
22010
A Closed-Form Model for 2-DEG Charge and Surface Potential in N-Polar Gallium Nitride Heterostructures
MA Menokey, A Ajoy
IEEE Transactions on Electron Devices, 2023
12023
The system can't perform the operation now. Try again later.
Articles 1–20