‪Ramesh Singh Bisht‬ - ‪Google Scholar‬

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Pramod KumarDepartment of Physics, IITB, Powai, Mumbai 400076, IndiaVerified email at iitb.ac.in

Ramesh Singh Bisht

Ramesh Singh Bisht

Indian Institute of Technology Bombay

Verified email at iitb.ac.in - Homepage

Organic Semiconductors Vertical OFETs Graphene-VOFETs


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Simulation study of various factors affecting the performance of vertical organic field-effect transistors RS Bisht, P Kumar Engineering Research Express 5 (3), 035040, 2023	1	2023
Simulation study of various factors affecting the performance of vertical organic field-effect transistors RS Bisht, P Kumar Engineering Research Express 5 (3), 035040, 2023	1	2023
Perforated graphene source electrode for improved subthreshold swing and miniaturization of vertical organic field effect transistors (VOFET) G Shukla, R Bisht, P Kumar Bulletin of the American Physical Society, 2024		2024
Predicting the miniaturization limit of vertical organic field effect transistor (VOFET) with perforated graphene as a source electrode G Shukla, RS Bisht, P Kumar Nanotechnology 35 (3), 035201, 2023		2023

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