| Trapping Effect Analysis of AlGaN/InGaN/GaN Heterostructure by Conductance-Frequency Measurement A Chakraborty, S Ghosh, P Mukhopadhyay, SM Dinara, A Bag, M Mahata, ... MRS Fall Meeting 2015, At: Boston, MassachusettsVolume: Symposium RR: Wide …, 2015 | 45 | 2015 |
| High-resolution X-ray diffraction analysis of AlxGa1xN/InxGa1xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations SK Jana, P Mukhopadhyay, S Ghosh, S Kabi, A Bag, Kumar, ... J. Appl. Phys. 115 (17), 174507, 2014 | 40 | 2014 |
| Comparison of Different Grading Schemes in InGaAs Metamorphic Buffers on GaAs Substrate: Tilt Dependence on Cross-Hatch Irregularities R Kumar, A Bag, P Mukhopadhyay, S Das, D Biswas Applied Surface Science, 2015 | 36 | 2015 |
| Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis SM Dinara, SK Jana, S Ghosh, P Mukhopadhyay, R Kumar, ... AIP Advances 5, 047136, 2015 | 31 | 2015 |
| Thermodynamic analysis of acetone sensing in Pd/AlGaN/GaN heterostructure Schottky diodes at low temperatures S Das, S Majumdar, R Kumar, S Ghosh, D Biswas Scripta Materialia 113, 39, 2016 | 23 | 2016 |
| Crystalline GaAs thin film growth on c-plane sapphire substrate SK Saha, R Kumar, AV Kuchuk, MZ Alavijeh, Y Maidaniuk, YI Mazur, ... Crystal Growth & Design, 2019 | 22 | 2019 |
| Fast Response (7.6s) Acetone Sensing by InGaN/GaN on Si (111) at 373 K S Das, A Bag, R Kumar, D Biswas IEEE Electron Device Letters, 2017 | 22 | 2017 |
| 2DEG modulation in double quantum well enhancement mode nitride HEMT A Bag, P Das, R Kumar, P Mukhopadhyay, S Majumdar, S Kabi, D Biswas Physica E: Low-dimensional Systems and Nanostructures 74, 59-64, 2015 | 19 | 2015 |
| Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-Assisted Molecular Beam Epitaxy S Das, S Ghosh, R Kumar, A Bag, D Biswas IEEE Transactions on Electron Devices 64 (11), 4650, 2017 | 18 | 2017 |
| Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix R Kumar, Y Maidaniuk, A Kuchuk, SK Saha, PK Ghosh, YI Mazur, ... Journal of Applied physics 124 (23), 235303, 2018 | 17 | 2018 |
| Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer MK Mahata, S Ghosh, SK Jana, A Chakraborty, A Bag, P Mukhopadhyay, ... AIP Advances 4, 117120, 2014 | 17 | 2014 |
| Graded Barrier AlGaN/AlN/GaN Heterostructure for Improved 2DEG Carrier Concentration and Mobility P Das, NN Halder, R Kumar, SK Jana, S Kabi, B Borisov, A Dabiran, ... Electron. Mater. Lett. 10 (6), 1087, 2014 | 13 | 2014 |
| GaAs Epitaxial Growth on R-Plane Sapphire Substrate SK Saha, R Kumar, AV Kuchuk, H Stanchu, YI Mazur, SQ Yu, GJ Salamo Journal of Crystal Growth 548, 125848, 2020 | 11 | 2020 |
| Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation R Kumar, Y Maidaniuk, SK Saha, YI Mazur, GJ Salamo Journal of Applied Physics 127 (6), 065306, 2020 | 11 | 2020 |
| A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si(1 0 0) P Mukhopadhyay, R Kumar, S Ghosh, A Chakraborty, A Bag, S Kabi, ... Journal of Crystal Growth 418, 138, 2015 | 11 | 2015 |
| Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness R Kumar, P Mukhopadhyay, A Bag, SK Jana, A Chakraborty, S Das, ... Applied Surface Science 324, 304-309, 2015 | 11 | 2015 |
| Investigation of cross-hatch surface and study of anisotropic relaxation and dislocation on InGaAs on GaAs (001) R Kumar, A Bag, P Mukhopadhyay, S Das, D Biswas Electronic Materials Letters 12 (3), 356, 2016 | 10 | 2016 |
| InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot N Alnami, R Kumar, A Kuchuk, Y Maidaniuk, SK Saha, AA Alnami, ... Solar Energy Materials and Solar Cells 224, 111026, 2021 | 9 | 2021 |
| Detecting single photons using capacitive coupling of single quantum dots Y Zhang, Y Wu, X Wang, L Ying, R Kumar, Z Yu, ER Fossum, J Liu, ... ACS Photonics 5 (5), 2008-2021, 2018 | 7 | 2018 |
| Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure A Chakraborty, S Ghosh, P Mukhopadhyay, SK Jana, SM Dinara, A Bag, ... Electronic Materials Letters 12, 232-236, 2016 | 7 | 2016 |
Subhashis DasResearch Associate, University of Arkansas, FayettevilleVerified email at uark.edu
